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Experimental Semiconductor Physics

Prof. Martin Stutzmann

Research Field

Our work at the Walter Schottky Institut deals with various aspects of new and non conventional semiconductor materials and material combinations: semiconductors with a wide bandgap (GaN, InGaN, AlGaN, diamond, SiC) disordered semiconductors (amorphous, nanocrystalline, and polycrystalline) advanced thin film systems (silicon-based luminescent layers, thin film solar cells, organic/anorganic heterosystems, biofunctionalized semiconductors). Most of these material systems are prepared in our group by suitable deposition techniques (MBE, MOCVD, Plasma-enhanced CVD, e-beam evaporation, sputtering). Their efficient optimization is based on the large pool of structural, optical, and electrical characterization techniques available in our Institute. Complementary to the usual spectroscopic techniques we have developed and employ a variety of highly sensitive methods which enable us to study in particular the influence of defects on the electronic performance of materials and devices. Such techniques include subgap absorption spectroscopy, optically induced capacitance spectroscopy and, in particular, modern spin resonance techniques which are applied to various materials systems and devices for spintronics.

In addition to the preparation and characterization of new semiconductor materials we also work on the modification and processing of semiconductors with pulsed high power laser systems (laser-crystallization, holographic nano structuring, laser-induced etching) and investigate the potential of new material systems for novel device structures. Recent examples include nano structured thin film solar cells, high electron mobility transistors based on AlGaN/GaN hetero structures, as well as UV-detectors, sensors and biosensors.

Learn more about the different research areas on the research pages of the Stutzmann, Brandt, and Garrido groups.


Am Coulombwall 4
85748 Garching b. München
+49 89 289 12761
Fax: +49 89 289 12737

Members of the Research Group





Other Staff


Course with Participations of Group Members

Titel und Modulzuordnung
Experimentalphysik 2 (MSE)
Zuordnung zu Modulen:
VO 3 Stutzmann, M. Mo, 12:15–13:15, MW 2001
Di, 12:00–14:00, MW 2001
Übung zu Experimentalphysik 2 (MSE)
Zuordnung zu Modulen:
UE 1 Eckmann, F.
Leitung/Koordination: Stutzmann, M.
Termine in Gruppen

Offers for Theses in the Group

Novel Nanowire Devices for the Optoelectronic Control of Color Centers in Silicon Carbide
Group III-nitride nanowires (NWs), namely GaN and its ternary alloys InxGa1-xN and AlxGa1-xN, have attracted increasing interest in device fabrication. Due to their 1D geometry and their high refractive index compared to air, the NWs are suitable as optical waveguides, especially for materials with a comparable refractive index like diamond or silicon carbide (SiC). The color center of these materials, e.g. nitrogen vacancies NV in diamond and silicon vacancies VSi in SiC, are both promising candidates as qubits for quantum computational applications. In detail, the NWs should work as nano-antenna for the optical read-out of the color centers and as nano-contacts for the electrical control of the charge states of the color centers. The aim of this work is the fabrication and characterization of (In,Ga)N NW LEDs for the optoelectronic control of VSi in SiC.
suitable as
  • Bachelor’s Thesis Physics
  • Master’s Thesis Condensed Matter Physics
  • Master’s Thesis Applied and Engineering Physics
Supervisor: Martin Stutzmann

Current and Finished Theses in the Group

Optical and Electrochemical Characterization of Alumina Thin Films on GaN
Abschlussarbeit im Bachelorstudiengang Physik
Themensteller(in): Martin Stutzmann
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