Halbleiterphysik
Semiconductor Physics

This module provides an introduction to the structural, electronic and optical properties of modern semiconductor materials and their associated nanostructures. The scientific and economical importance of semiconductor physics as a cross-cutting part of modern solid state physics is briefly outlined. Then, an introduction to the different methods for the fabrication and deposition used for ultrapure semiconductor materials, alloys and mixed crystal "multi-layer" systems will be given. The main body of the lecture deals with material and electronic properties of the most commonly used semiconductors. In particular, the electronic bandstructure and the resulting properties of effective mass electrons, holes and other relevant quasiparticles such as excitons are discussed. Equilibrium charge carrier statistics in intrinsic (undoped) semiconductors are then explored before discussing how doping can be used to controllably modify the electronic properties. This is followed by a discussion of electronic properties of semiconductors under application-related non-equilibrium conditions, such as illumination in solar cells or photo-detectors, or voltage biasing in diodes or transistors. To this end, the basic properties  of semiconductor/semiconductor-, semiconductor/metal-, and semiconductor/insulator-hetero-interfaces will be introduced.

After participation in the Module the student is able to:

1. Describe the crystal structure and explain the principle fabrication methods for the most prominent semiconductor materials
2. Explain and calculate the electronic bandstructure of these materials and its dependence on material composition.
3. Understand the terms "two-dimensional", "one-dimensional" and "zero-dimensional" semiconductor nanostructure and explain the influence of quantum confinement on the electronic properties of semiconductors.
4. Understand and explain the physics of charge carrier statistics and scattering governing electrical conductivity in bulk semiconductors and low dimensional nanostructures.
5. Understand and explain the optical properties of semiconductors, in particular optical absorption and recombination of non-equilibrium charge carriers.
6. Understand and explain the basic properties of semiconductor surfaces and interfaces with device-relevant applications to Schottky diodes, solar cells and heterojunctions in optoelectronivs.

Keine Vorkenntnisse nötig, die über die Zulassungsvoraussetzungen zum Masterstudium hinausgehen.

A written manuscript developped on a tablet PC and projected during the lecture. Additional power point presentations summarizing complicated details and state-of-the-art research results. An additional excercise to obtain a better comprehension of and familiarity with the lecture contents.

Power point and One Note presentation.

Standard textbooks of semiconductor physics, e.g.:

·         Fundamentals of Semiconductors, P.Y. Wu, M. Cardona, Springer 2006: Schwerpunkt auf Theorie, hohes Niveau, viel Optik

·         Physics of Semiconductors, Marius Grundmann, Springer 2006: Mehr Anwendungs- und Materialbezug

·         Semiconductor Physics and Applications, M. Balkanski, R.F. Wallis, Oxford University Press 2000:  Gute Übersicht über derzeitigen Stand, inklusive theoretische Konzepte und Bauelemente

·         Halbleiterphysik, R. Sauer, Oldenburg, 2009: derzeit einziges empfehlenswertes deutschsprachiges Lehrbuch

·         Semiconductor Material and Device Characterization, D. K. Schröder, Wiley-IEEE 2006: viele Methoden der Halbleiterphysik

In einer schriftlichen Prüfung von 90 Minuten Dauer wird das Erreichen der Lernergebnisse durch Verständnisfragen und Beispielaufgaben bewertet.

Die Prüfung kann in Übereinstimmung mit §12 (8) APSO auch mündlich abgehalten werden, in diesem Fall ist der Richtwert für die Prüfungsdauer 40 Minuten.