Prof. Dr. Martin Stutzmann

Electrochemical characterization of GaN surface states

Andrea Winnerl (author), Jose A. Garrido (author), Martin Stutzmann (author)

2017-7-28

journal article

Journal of Applied Physics

DOI: 10.1063/1.4995429

Photo-induced changes of the surface band bending in GaN: Influence of growth technique, doping and polarity

Andrea Winnerl (author), Rui N. Pereira (author), Martin Stutzmann (author)

2017-5-28

journal article

Journal of Applied Physics

DOI: 10.1063/1.4983846

Measurement of the in-plane thermal conductivity by steady-state infrared thermography

Anton Greppmair (author), Benedikt Stoib (author), Nitin Saxena (author), Caroline Gerstberger (author), Peter Müller-Buschbaum (author), Martin Stutzmann (author), Martin S. Brandt (author)

2017-4

journal article

Review of Scientific Instruments

DOI: 10.1063/1.4979564

GaN surface states investigated by electrochemical studies

Andrea Winnerl (author), Jose A. Garrido (author), Martin Stutzmann (author)

2017-3-6

journal article

Applied Physics Letters

DOI: 10.1063/1.4977947

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

James (Zi-Jian) Ju (author), Bo Sun (author), Georg Haunschild (author), Bernhard Loitsch (author), Benedikt Stoib (author), Martin S. Brandt (author), Martin Stutzmann (author), Yee Kan Koh (author), Gregor Koblmüller (author)

2016-4

journal article

AIP Advances

DOI: 10.1063/1.4948446

α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

Hannah Schamoni (author), Simon Noever (author), Bert Nickel (author), Martin Stutzmann (author), Jose A. Garrido (author)

2016-2-15

journal article

Applied Physics Letters

DOI: 10.1063/1.4942407

Broadband electrically detected magnetic resonance using adiabatic pulses

Hrubesch, F.M., Braunbeck, G., Voss, A., Stutzmann, M., Brandt, M.S.

2015

journal article

Journal of Magnetic Resonance

URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84925743813&partnerID=MN8TOARS

DOI: 10.1016/j.jmr.2015.02.010

EID: 2-s2.0-84925743813

Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

Schuster, F., Winnerl, A., Weiszer, S., Hetzl, M., Garrido, J.A., Stutzmann, M.

2015

journal article

Journal of Applied Physics

URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84923675344&partnerID=MN8TOARS

DOI: 10.1063/1.4906747

EID: 2-s2.0-84923675344

Electronic changes induced by surface modification of Cu<inf>2-x</inf>S nanocrystals

Aigner, W., Nenova, G.K., Sliem, M.A., Fischer, R.A., Stutzmann, M., Pereira, R.N.

2015

journal article

Journal of Physical Chemistry C

URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84937155972&partnerID=MN8TOARS

DOI: 10.1021/acs.jpcc.5b01078

EID: 2-s2.0-84937155972

Kinetics of optically excited charge carriers at the GaN surface

Winnerl, A., Pereira, R.N., Stutzmann, M.

2015

journal article

Physical Review B - Condensed Matter and Materials Physics

URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84923862367&partnerID=MN8TOARS

DOI: 10.1103/PhysRevB.91.075316

EID: 2-s2.0-84923862367

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