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Prof. Dr. Martin Stutzmann

Photo von Prof. Dr. Martin Stutzmann.
Phone
+49 89 289-12760
Room
WSI: S207
E-Mail
stutzmann@tum.de
Links
Homepage
Page in TUMonline
Group
Experimental Semiconductor Physics
Job Title
Professorship on Experimental Semiconductor Physics

Courses and Dates

Title and Module Assignment
ArtSWSLecturer(s)Dates
Experimental Physics 2 for MSE
eLearning course
Assigned to modules:
VO 3 Stutzmann, M. Mon, 12:15–13:15
Tue, 12:00–14:00
Current Topics in Semiconductor Physics and Advanced Materials
Assigned to modules:
HS 2 Sharp, I. Stutzmann, M. Fri, 13:00–14:30, virtuell
Tutorial to Experimental Physics 2 for MSE
Assigned to modules:
UE 1 Eckmann, F.
Responsible/Coordination: Stutzmann, M.
dates in groups
FOPRA Experiment 08: High Resolution X-Ray Diffraction (KM, BIO, AEP)
current information
Assigned to modules:
PR 1 Stutzmann, M.
Assisstants: Hoffmann, T.
FOPRA Experiment 50: Photovoltaics
current information
Assigned to modules:
PR 1 Stutzmann, M.
Assisstants: Pantle, F.
Literature Seminar on Solid State Physics
Assigned to modules:
SE 2 Stutzmann, M. Wed, 13:00–14:30, virtuell
Revision Course to Current Topics in Semiconductor Physics and Advanced Materials
Assigned to modules:
RE 2
Responsible/Coordination: Stutzmann, M.
Schottky-Seminar (WSI Seminar)
This course is not assigned to a module.
SE 2 Belkin, M. Brandt, M. Finley, J. Holleitner, A. Sharp, I. … (insgesamt 6) Tue, 13:15–14:30, virtuell
Consultation hour to experimental physics 2 (MSE)
Assigned to modules:
RE 2 Stutzmann, M. dates in groups
Instruction for the Advanced Lab Course (FOPRA)
eLearning course current information
Assigned to modules:
PR 0.1 Schönert, S. Stutzmann, M.
Assisstants: Höffer von Loewenfeld, P.Saß, M.
singular or moved dates

Publications

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
Florian Pantle (author), Fabian Becker (author), Max Kraut (author), Simon Wörle (author), Theresa Hoffmann (author), Sabrina Artmeier (author), Martin Stutzmann (author)
2021
journal article
Nanoscale Advances
DOI: 10.1039/D1NA00221J
Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN
Alex Henning (author), Johannes D. Bartl (author), Andreas Zeidler (author), Simon Qian (author), Oliver Bienek (author), Chang‐Ming Jiang (author), Claudia Paulus (author), Bernhard Rieger (author), Martin Stutzmann (author), Ian D. Sharp (author)
2021-06-12
journal article
Advanced Functional Materials
DOI: 10.1002/adfm.202101441
Photocurrent spectroscopy of in-plane surface conductive diamond homostructures
Patrick Simon (author), Philipp Beck (author), Ankit Rathi (author), Martin Stutzmann (author), Jose A. Garrido (author)
2020-05-18
journal article
Physical Review B
URL: https://doi.org/10.1103/PhysRevB.101.205306
DOI: 10.1103/PhysRevB.101.205306
Sub-bandgap optical spectroscopy of epitaxial β-Ga2O3 thin films
Sijie Hao (author), Martin Hetzl (author), Viktoria F. Kunzelmann (author), Sonja Matich (author), Qinglin Sai (author), Changtai Xia (author), Ian D. Sharp (author), Martin Stutzmann (author)
2020-03-02
journal article
Applied Physics Letters
URL: https://doi.org/10.1063/1.5143393
DOI: 10.1063/1.5143393
Thermal characterization of thin films via dynamic infrared thermography
Anton Greppmair (author), Natalie Galfe (author), Katharina Amend (author), Martin Stutzmann (author), Martin S. Brandt (author)
2019-04
journal article
Review of Scientific Instruments
URL: https://doi.org/10.1063/1.5067400
DOI: 10.1063/1.5067400
Growth mechanisms of F4-TCNQ on inorganic substrates and nanostructures
H Schamoni (author), M Hetzl (author), T Hoffmann (author), K Stoiber (author), S Matich (author), M Stutzmann (author)
2018-11-09
journal article
Materials Research Express
URL: https://doi.org/10.1088/2053-1591/aaecb8
DOI: 10.1088/2053-1591/aaecb8
Photocurrent generation of biohybrid systems based on bacterial reaction centers and graphene electrodes
Réka Csiki (author), Simon Drieschner (author), Alina Lyuleeva (author), Anna Cattani-Scholz (author), Martin Stutzmann (author), Jose A. Garrido (author)
2018-10
journal article
Diamond and Related Materials
URL: https://doi.org/10.1016/j.diamond.2018.09.005
DOI: 10.1016/j.diamond.2018.09.005
A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions
Martin Hetzl (author), Max Kraut (author), Theresa Hoffmann (author), Julia Winnerl (author), Katarina Boos (author), Andreas Zeidler (author), Ian D. Sharp (author), Martin Stutzmann (author)
2018-07-21
journal article
Journal of Applied Physics
URL: https://doi.org/10.1063/1.5038802
DOI: 10.1063/1.5038802
Optical design of GaN nanowire arrays for photocatalytic applications
Julia Winnerl (author), Richard Hudeczek (author), Martin Stutzmann (author)
2018-05-28
journal article
Journal of Applied Physics
URL: https://doi.org/10.1063/1.5028476
DOI: 10.1063/1.5028476
Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2¯01)
Sebastian L. Kollmannsberger (author), Constantin A. Walenta (author), Andrea Winnerl (author), Fabian Knoller (author), Rui N. Pereira (author), Martin Tschurl (author), Martin Stutzmann (author), Ueli Heiz (author)
2017-09-28
journal article
The Journal of Chemical Physics
URL: https://doi.org/10.1063/1.4994141
DOI: 10.1063/1.4994141
Electrochemical characterization of GaN surface states
Andrea Winnerl (author), Jose A. Garrido (author), Martin Stutzmann (author)
2017-07-28
journal article
Journal of Applied Physics
URL: https://doi.org/10.1063/1.4995429
DOI: 10.1063/1.4995429
Photo-induced changes of the surface band bending in GaN: Influence of growth technique, doping and polarity
Andrea Winnerl (author), Rui N. Pereira (author), Martin Stutzmann (author)
2017-05-28
journal article
Journal of Applied Physics
DOI: 10.1063/1.4983846
Measurement of the in-plane thermal conductivity by steady-state infrared thermography
Anton Greppmair (author), Benedikt Stoib (author), Nitin Saxena (author), Caroline Gerstberger (author), Peter Müller-Buschbaum (author), Martin Stutzmann (author), Martin S. Brandt (author)
2017-04
journal article
Review of Scientific Instruments
URL: https://doi.org/10.1063/1.4979564
DOI: 10.1063/1.4979564
GaN surface states investigated by electrochemical studies
Andrea Winnerl (author), Jose A. Garrido (author), Martin Stutzmann (author)
2017-03-06
journal article
Applied Physics Letters
DOI: 10.1063/1.4977947
Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
James (Zi-Jian) Ju (author), Bo Sun (author), Georg Haunschild (author), Bernhard Loitsch (author), Benedikt Stoib (author), Martin S. Brandt (author), Martin Stutzmann (author), Yee Kan Koh (author), Gregor Koblmüller (author)
2016-04
journal article
AIP Advances
URL: https://doi.org/10.1063/1.4948446
DOI: 10.1063/1.4948446
α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
Hannah Schamoni (author), Simon Noever (author), Bert Nickel (author), Martin Stutzmann (author), Jose A. Garrido (author)
2016-02-15
journal article
Applied Physics Letters
URL: https://doi.org/10.1063/1.4942407
DOI: 10.1063/1.4942407
Broadband electrically detected magnetic resonance using adiabatic pulses
Hrubesch, F.M., Braunbeck, G., Voss, A., Stutzmann, M., Brandt, M.S.
2015
journal article
Journal of Magnetic Resonance
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84925743813&partnerID=MN8TOARS
DOI: 10.1016/j.jmr.2015.02.010
EID: 2-s2.0-84925743813
Doped GaN nanowires on diamond: Structural properties and charge carrier distribution
Schuster, F., Winnerl, A., Weiszer, S., Hetzl, M., Garrido, J.A., Stutzmann, M.
2015
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84923675344&partnerID=MN8TOARS
DOI: 10.1063/1.4906747
EID: 2-s2.0-84923675344
Electronic changes induced by surface modification of Cu<inf>2-x</inf>S nanocrystals
Aigner, W., Nenova, G.K., Sliem, M.A., Fischer, R.A., Stutzmann, M., Pereira, R.N.
2015
journal article
Journal of Physical Chemistry C
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84937155972&partnerID=MN8TOARS
DOI: 10.1021/acs.jpcc.5b01078
EID: 2-s2.0-84937155972
Kinetics of optically excited charge carriers at the GaN surface
Winnerl, A., Pereira, R.N., Stutzmann, M.
2015
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84923862367&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.91.075316
EID: 2-s2.0-84923862367
Photocurrent generation in diamond electrodes modified with reaction centers
Caterino, R., Csiki, R., Lyuleeva, A., Pfisterer, J., Wiesinger, M., Janssens, S.D., Haenen, K., Cattani-Scholz, A., Stutzmann, M., Garrido, J.A.
2015
journal article
ACS Applied Materials and Interfaces
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84928501323&partnerID=MN8TOARS
DOI: 10.1021/acsami.5b00711
EID: 2-s2.0-84928501323
Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy
Schuster, F., Hetzl, M., Weiszer, S., Garrido, J.A., De La Mata, M., Magen, C., Arbiol, J., Stutzmann, M.
2015
journal article
Nano Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84924535068&partnerID=MN8TOARS
DOI: 10.1021/nl504446r
EID: 2-s2.0-84924535068
Pulsed low-field electrically detected magnetic resonance
Dreher, L., Hoehne, F., Morishita, H., Huebl, H., Stutzmann, M., Itoh, K.M., Brandt, M.S.
2015
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84924061249&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.91.075314
EID: 2-s2.0-84924061249
Submillisecond hyperpolarization of nuclear spins in silicon
Hoehne, F., Dreher, L., Franke, D.P., Stutzmann, M., Vlasenko, L.S., Itoh, K.M., Brandt, M.S.
2015
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84925731186&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.114.117602
EID: 2-s2.0-84925731186
Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures
Andrea Winnerl (author), Rui N. Pereira (author), Martin Stutzmann (author)
2015-10-21
journal article
Journal of Applied Physics
URL: https://doi.org/10.1063/1.4933175
DOI: 10.1063/1.4933175
Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions
Fabian Schuster (author), Martin Hetzl (author), Saskia Weiszer (author), Marco Wolfer (author), Hiromitsu Kato (author), Christoph E. Nebel (author), Jose A. Garrido (author), Martin Stutzmann (author)
2015-10-21
journal article
Journal of Applied Physics
URL: https://doi.org/10.1063/1.4933099
DOI: 10.1063/1.4933099
Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures
Hauf, M.V., Simon, P., Aslam, N., Pfender, M., Neumann, P., Pezzagna, S., Meijer, J., Wrachtrup, J., Stutzmann, M., Reinhard, F., Garrido, J.A.
2014
journal article
Nano Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84900472483&partnerID=MN8TOARS
DOI: 10.1021/nl4047619
EID: 2-s2.0-84900472483
Detection of random vapour concentrations using an integrating diamond gas sensor
Krstev, I., Helwig, A., Müller, G., Garrido, J., Stutzmann, M.
2014
journal article
Sensors and Actuators, B: Chemical
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84894443933&partnerID=MN8TOARS
DOI: 10.1016/j.snb.2014.01.093
EID: 2-s2.0-84894443933
Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity
Schuster, F., Hetzl, M., Magén, C., Arbiol, J., Garrido, J.A., Stutzmann, M.
2014
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84902578607&partnerID=MN8TOARS
DOI: 10.1063/1.4880161
EID: 2-s2.0-84902578607
Influence of substrate material, orientation, and surface termination on GaN nanowire growth
Schuster, F., Weiszer, S., Hetzl, M., Winnerl, A., Garrido, J.A., Stutzmann, M.
2014
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84905979857&partnerID=MN8TOARS
DOI: 10.1063/1.4892113
EID: 2-s2.0-84905979857
Low dimensionality of the surface conductivity of diamond
Hauf, M.V., Simon, P., Seifert, M., Holleitner, A.W., Stutzmann, M., Garrido, J.A.
2014
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84897885065&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.89.115426
EID: 2-s2.0-84897885065
Organophosphonate biofunctionalization of diamond electrodes
Caterino, R., Csiki, R., Wiesinger, M., Sachsenhauser, M., Stutzmann, M., Garrido, J.A., Cattani-Scholz, A., Speranza, G., Janssens, S.D., Haenen, K.
2014
journal article
ACS Applied Materials and Interfaces
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84906821065&partnerID=MN8TOARS
DOI: 10.1021/am503305t
EID: 2-s2.0-84906821065
P-GaN/n-ZnO heterojunction nanowires: Optoelectronic properties and the role of interface polarity
Schuster, F., Laumer, B., Zamani, R.R., Magén, C., Morante, J.R., Arbiol, J., Stutzmann, M.
2014
journal article
ACS Nano
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84901650216&partnerID=MN8TOARS
DOI: 10.1021/nn406134e
EID: 2-s2.0-84901650216
Porous silicon formation during Au-catalyzed etching
Algasinger, M., Bernt, M., Koynov, S., Stutzmann, M.
2014
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84900003548&partnerID=MN8TOARS
DOI: 10.1063/1.4873892
EID: 2-s2.0-84900003548
Resonant electronic coupling enabled by small molecules in nanocrystal solids
Pereira, R.N., Coutinho, J., Niesar, S., Oliveira, T.A., Aigner, W., Wiggers, H., Rayson, M.J., Briddon, P.R., Brandt, M.S., Stutzmann, M.
2014
journal article
Nano Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84903986456&partnerID=MN8TOARS
DOI: 10.1021/nl500932q
EID: 2-s2.0-84903986456
Spatially resolved determination of thermal conductivity by Raman spectroscopy
Stoib, B., Filser, S., Stötzel, J., Greppmair, A., Petermann, N., Wiggers, H., Schierning, G., Stutzmann, M., Brandt, M.S.
2014
journal article
Semiconductor Science and Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84911920271&partnerID=MN8TOARS
DOI: 10.1088/0268-1242/29/12/124005
EID: 2-s2.0-84911920271
Thermal conductivity of mesoporous films measured by Raman spectroscopy
Stoib, B., Filser, S., Petermann, N., Wiggers, H., Stutzmann, M., Brandt, M.S.
2014
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84900300950&partnerID=MN8TOARS
DOI: 10.1063/1.4873539
EID: 2-s2.0-84900300950
Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films
Ju, J., Loitsch, B., Stettner, T., Schuster, F., Stutzmann, M., Koblmüller, G.
2014
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84905975433&partnerID=MN8TOARS
DOI: 10.1063/1.4891990
EID: 2-s2.0-84905975433
Accurate determination of optical bandgap and lattice parameters of Zn 1-xMgxO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire
Laumer, B., Schuster, F., Stutzmann, M., Bergmaier, A., Dollinger, G., Eickhoff, M.
2013
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84880782948&partnerID=MN8TOARS
DOI: 10.1063/1.4811693
EID: 2-s2.0-84880782948
Assessment of cell proliferation on 6H-SiC biofunctionalized with self-assembled monolayers
Oliveros, A., Frewin, C.L., Schoell, S.J., Hoeb, M., Stutzmann, M., Sharp, I.D., Saddow, S.E.
2013
journal article
Journal of Materials Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84872315822&partnerID=MN8TOARS
DOI: 10.1557/jmr.2012.233
EID: 2-s2.0-84872315822
Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange
Antesberger, T., Wassner, T.A., Jaeger, C., Algasinger, M., Kashani, M., Scholz, M., Matich, S., Stutzmann, M.
2013
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84879092740&partnerID=MN8TOARS
DOI: 10.1063/1.4808024
EID: 2-s2.0-84879092740
Charge transfer across the GaN/Pt nanoparticle interface in an electrolyte
Schäfer, S., Wyrzgol, S.A., Lercher, J.A., Stutzmann, M., Sharp, I.D.
2013
journal article
ChemCatChem
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84889609253&partnerID=MN8TOARS
DOI: 10.1002/cctc.201300070
EID: 2-s2.0-84889609253
Depassivation kinetics in crystalline silicon nanoparticles
Pereira, R.N., Niesar, S., Wiggers, H., Brandt, M.S., Stutzmann, M.S.
2013
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84887059977&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.88.155430
EID: 2-s2.0-84887059977
Electrically detected double electron-electron resonance: Exchange interaction of P donors and Pb0 defects at the Si/SiO2 interface
Suckert, M., Hoehne, F., Dreher, L., Kuenzl, M., Huebl, H., Stutzmann, M., Brandt, M.S.
2013
journal article
Molecular Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84885669212&partnerID=MN8TOARS
DOI: 10.1080/00268976.2013.816796
EID: 2-s2.0-84885669212
Functional polymer brushes on diamond as a platform for immobilization and electrical wiring of biomolecules
Reitinger, A.A., Hutter, N.A., Donner, A., Steenackers, M., Williams, O.A., Stutzmann, M., Jordan, R., Garrido, J.A.
2013
journal article
Advanced Functional Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84879120621&partnerID=MN8TOARS
DOI: 10.1002/adfm.201202342
EID: 2-s2.0-84879120621
Functional polymer brushes on hydrogenated graphene
Seifert, M., Koch, A.H.R., Deubel, F., Simmet, T., Hess, L.H., Stutzmann, M., Jordan, R., Garrido, J.A., Sharp, I.D.
2013
journal article
Chemistry of Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84873649346&partnerID=MN8TOARS
DOI: 10.1021/cm3036983
EID: 2-s2.0-84873649346
Improved black silicon for photovoltaic applications
Algasinger, M., Paye, J., Werner, F., Schmidt, J., Brandt, M.S., Stutzmann, M., Koynov, S.
2013
journal article
Advanced Energy Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84882264487&partnerID=MN8TOARS
DOI: 10.1002/aenm.201201038
EID: 2-s2.0-84882264487
Morphology, thermoelectric properties and wet-chemical doping of laser-sintered germanium nanoparticles
Stoib, B., Langmann, T., Petermann, N., Matich, S., Sachsenhauser, M., Wiggers, H., Stutzmann, M., Brandt, M.S.
2013
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84872416587&partnerID=MN8TOARS
DOI: 10.1002/pssa.201228392
EID: 2-s2.0-84872416587
Organic functionalization of 3C-SiC surfaces
Schoell, S.J., Sachsenhauser, M., Oliveros, A., Howgate, J., Stutzmann, M., Brandt, M.S., Frewin, C.L., Saddow, S.E., Sharp, I.D.
2013
journal article
ACS Applied Materials and Interfaces
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84874626896&partnerID=MN8TOARS
DOI: 10.1021/am302786n
EID: 2-s2.0-84874626896
Physical unclonable functions based on crossbar arrays for cryptographic applications
Lugli, P., Mahmoud, A., Csaba, G., Algasinger, M., Stutzmann, M., Rührmair, U.
2013
journal article
International Journal of Circuit Theory and Applications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84879422808&partnerID=MN8TOARS
DOI: 10.1002/cta.1825
EID: 2-s2.0-84879422808
Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
Loitsch, B., Schuster, F., Stutzmann, M., Koblmüller, G.
2013
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84874099660&partnerID=MN8TOARS
DOI: 10.1063/1.4789983
EID: 2-s2.0-84874099660
Semiconductor/polymer nanocomposites of acrylates and nanocrystalline silicon by laser-induced thermal polymerization
Deubel, F., Steenackers, M., Garrido, J.A., Stutzmann, M., Jordan, R.
2013
journal article
Macromolecular Materials and Engineering
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84887279134&partnerID=MN8TOARS
DOI: 10.1002/mame.201200392
EID: 2-s2.0-84887279134
Separation of semiconducting and ferromagnetic FeSi2- nanoparticles by magnetic filtering
Aigner, W., Niesar, S., Mehmedovic, E., Opel, M., Wagner, F.E., Wiggers, H., Stutzmann, M.
2013
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84885454519&partnerID=MN8TOARS
DOI: 10.1063/1.4824293
EID: 2-s2.0-84885454519
The electrically detected magnetic resonance microscope: Combining conductive atomic force microscopy with electrically detected magnetic resonance
Klein, K., Hauer, B., Stoib, B., Trautwein, M., Matich, S., Huebl, H., Astakhov, O., Finger, F., Bittl, R., Stutzmann, M., Brandt, M.S.
2013
journal article
Review of Scientific Instruments
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84887329388&partnerID=MN8TOARS
DOI: 10.1063/1.4827036
EID: 2-s2.0-84887329388
Time constants of spin-dependent recombination processes
Hoehne, F., Dreher, L., Suckert, M., Franke, D.P., Stutzmann, M., Brandt, M.S.
2013
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84885211498&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.88.155301
EID: 2-s2.0-84885211498
Water adsorbate mediated accumulation gas sensing at hydrogenated diamond surfaces
Beer, S., Helwig, A., Müller, G., Garrido, J., Stutzmann, M.
2013
journal article
Sensors and Actuators, B: Chemical
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84875466075&partnerID=MN8TOARS
DOI: 10.1016/j.snb.2013.02.072
EID: 2-s2.0-84875466075
Biofunctional electrolyte-gated organic field-effect transistors
Buth, F., Donner, A., Sachsenhauser, M., Stutzmann, M., Garrido, J.A.
2012
journal article
Advanced Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84865322214&partnerID=MN8TOARS
DOI: 10.1002/adma.201201841
EID: 2-s2.0-84865322214
Charge state manipulation of qubits in diamond
Grotz, B., Hauf, M.V., Dankerl, M., Naydenov, B., Pezzagna, S., Meijer, J., Jelezko, F., Wrachtrup, J., Stutzmann, M., Reinhard, F., Garrido, J.A.
2012
journal article
Nature Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84859208201&partnerID=MN8TOARS
DOI: 10.1038/ncomms1729
EID: 2-s2.0-84859208201
Charge transfer across the n-Type GaN-electrolyte interface
Schäfer, S., Koch, A.H.R., Cavallini, A., Stutzmann, M., Sharp, I.D.
2012
journal article
Journal of Physical Chemistry C
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84867892673&partnerID=MN8TOARS
DOI: 10.1021/jp302000x
EID: 2-s2.0-84867892673
Determination of the defect density in thin film amorphous and microcrystalline silicon from ESR measurements: The influence of the sample preparation procedure
Xiao, L., Astakhov, O., Finger, F., Stutzmann, M.
2012
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84865768075&partnerID=MN8TOARS
DOI: 10.1016/j.jnoncrysol.2012.01.039
EID: 2-s2.0-84865768075
Diamond solution-gated field effect transistors: Properties and bioelectronic applications
Dankerl, M., Hauf, M.V., Stutzmann, M., Garrido, J.A.
2012
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84866376698&partnerID=MN8TOARS
DOI: 10.1002/pssa.201200345
EID: 2-s2.0-84866376698
Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange
Birajdar, B.I., Antesberger, T., Butz, B., Stutzmann, M., Spiecker, E.
2012
journal article
Scripta Materialia
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84857640217&partnerID=MN8TOARS
DOI: 10.1016/j.scriptamat.2011.12.045
EID: 2-s2.0-84857640217
Enzyme-modified electrolyte-gated organic field effect transistors
Buth, F., Donner, A., Stutzmann, M., Garrido, J.A.
2012
conference paper
Proceedings of SPIE - The International Society for Optical Engineering
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84872153822&partnerID=MN8TOARS
DOI: 10.1117/12.929850
EID: 2-s2.0-84872153822
Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metal-induced layer exchange
Antesberger, T., Wassner, T.A., Kashani, M., Scholz, M., Lechner, R., Matich, S., Stutzmann, M.
2012
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84879081584&partnerID=MN8TOARS
DOI: 10.1063/1.4768542
EID: 2-s2.0-84879081584
Growth study of nonpolar Zn 1-xMg xO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
Laumer, B., Schuster, F., Stutzmann, M., Bergmaier, A., Dollinger, G., Vogel, S., Gries, K.I., Volz, K., Eickhoff, M.
2012
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84866846573&partnerID=MN8TOARS
DOI: 10.1063/1.4754076
EID: 2-s2.0-84866846573
In vitro bio-functionality of gallium nitride sensors for radiation biophysics
Hofstetter, M., Howgate, J., Schmid, M., Schoell, S., Sachsenhauser, M., Adigüzel, D., Stutzmann, M., Sharp, I.D., Thalhammer, S.
2012
journal article
Biochemical and Biophysical Research Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84864322461&partnerID=MN8TOARS
DOI: 10.1016/j.bbrc.2012.06.142
EID: 2-s2.0-84864322461
Laser-sintered thin films of doped SiGe nanoparticles
Stoib, B., Langmann, T., Matich, S., Antesberger, T., Stein, N., Angst, S., Petermann, N., Schmechel, R., Schierning, G., Wolf, D.E., Wiggers, H., Stutzmann, M., Brandt, M.S.
2012
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84862154503&partnerID=MN8TOARS
DOI: 10.1063/1.4726041
EID: 2-s2.0-84862154503
Lock-in detection for pulsed electrically detected magnetic resonance
Hoehne, F., Dreher, L., Behrends, J., Fehr, M., Huebl, H., Lips, K., Schnegg, A., Suckert, M., Stutzmann, M., Brandt, M.S.
2012
journal article
Review of Scientific Instruments
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84860554163&partnerID=MN8TOARS
DOI: 10.1063/1.4704837
EID: 2-s2.0-84860554163
Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties
Niesar, S., Pereira, R.N., Stegner, A.R., Erhard, N., Hoeb, M., Baumer, A., Wiggers, H., Brandt, M.S., Stutzmann, M.
2012
journal article
Advanced Functional Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84858436384&partnerID=MN8TOARS
DOI: 10.1002/adfm.201101811
EID: 2-s2.0-84858436384
Nuclear spins of ionized phosphorus donors in silicon
Dreher, L., Hoehne, F., Stutzmann, M., Brandt, M.S.
2012
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84855673984&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.108.027602
EID: 2-s2.0-84855673984
Platinum nanoparticles on gallium nitride surfaces: Effect of semiconductor doping on nanoparticle reactivity
Schäfer, S., Wyrzgol, S.A., Caterino, R., Jentys, A., Schoell, S.J., Hävecker, M., Knop-Gericke, A., Lercher, J.A., Sharp, I.D., Stutzmann, M.
2012
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84864430903&partnerID=MN8TOARS
DOI: 10.1021/ja3020132
EID: 2-s2.0-84864430903
Self-assembled GaN nanowires on diamond
Schuster, F., Furtmayr, F., Zamani, R., Magén, C., Morante, J.R., Arbiol, J., Garrido, J.A., Stutzmann, M.
2012
journal article
Nano Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84861060774&partnerID=MN8TOARS
DOI: 10.1021/nl203872q
EID: 2-s2.0-84861060774
Solid polyelectrolyte-gated surface conductive diamond field effect transistors
Dankerl, M., Tosun, M., Stutzmann, M., Garrido, J.A.
2012
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84855981553&partnerID=MN8TOARS
DOI: 10.1063/1.3676662
EID: 2-s2.0-84855981553
Thermodynamic effi ciency limit of molecular donor-acceptor solar cells and its application to diindenoperylene/C 60 -based planar heterojunction devices
Gruber, M., Wagner, J., Klein, K., Hörmann, U., Opitz, A., Stutzmann, M., Brütting, W.
2012
journal article
Advanced Energy Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84867323284&partnerID=MN8TOARS
DOI: 10.1002/aenm.201200077
EID: 2-s2.0-84867323284
Ultrahigh gain AlGaN/GaN high energy radiation detectors
Howgate, J.D., Hofstetter, M., Schoell, S.J., Schmid, M., Schäfer, S., Zizak, I., Hable, V., Greubel, C., Dollinger, G., Thalhammer, S., Stutzmann, M., Sharp, I.D.
2012
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84865165965&partnerID=MN8TOARS
DOI: 10.1002/pssa.201228097
EID: 2-s2.0-84865165965
ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers
Laumer, B., Schuster, F., Wassner, T.A., Stutzmann, M., Rohnke, M., Schörmann, J., Eickhoff, M.
2012
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84863306811&partnerID=MN8TOARS
DOI: 10.1063/1.4723642
EID: 2-s2.0-84863306811
1961-2011: Celebrating the 50th Anniversary of physica status solidi!
Stutzmann, M.
2011
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78651285265&partnerID=MN8TOARS
DOI: 10.1002/pssb.201140801
EID: 2-s2.0-78651285265
Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Investigation of defects with electron spin resonance
Xiao, L., Astakhov, O., Chen, T., Stutzmann, M., Finger, F.
2011
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79958829881&partnerID=MN8TOARS
DOI: 10.1016/j.tsf.2011.01.298
EID: 2-s2.0-79958829881
Applications of high-capacity crossbar memories in cryptography
Rührmair, U., Jaeger, C., Bator, M., Stutzmann, M., Lugli, P., Csaba, G.
2011
journal article
IEEE Transactions on Nanotechnology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79955919867&partnerID=MN8TOARS
DOI: 10.1109/TNANO.2010.2049367
EID: 2-s2.0-79955919867
Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC
Dietmueller, R., Nesswetter, H., Schoell, S.J., Sharp, I.D., Stutzmann, M.
2011
journal article
ACS Applied Materials and Interfaces
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84855867197&partnerID=MN8TOARS
DOI: 10.1021/am200952s
EID: 2-s2.0-84855867197
Black thin film silicon
Koynov, S., Brandt, M.S., Stutzmann, M.
2011
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-80052426029&partnerID=MN8TOARS
DOI: 10.1063/1.3626900
EID: 2-s2.0-80052426029
Chemical control of the charge state of nitrogen-vacancy centers in diamond
Hauf, M.V., Grotz, B., Naydenov, B., Dankerl, M., Pezzagna, S., Meijer, J., Jelezko, F., Wrachtrup, J., Stutzmann, M., Reinhard, F., Garrido, J.A.
2011
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79961059597&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.83.081304
EID: 2-s2.0-79961059597
Circuit-based approaches to simpl systems
Chen, Q., Csaba, G., Lugli, P., Schlichtmann, U., Stutzmann, M., Rührmair, U.
2011
journal article
Journal of Circuits, Systems and Computers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78951492926&partnerID=MN8TOARS
DOI: 10.1142/S0218126611007098
EID: 2-s2.0-78951492926
Development and evaluation of gallium nitride-based thin films for x-ray dosimetry
Hofstetter, M., Howgate, J., Sharp, I.D., Stutzmann, M., Thalhammer, S.
2011
journal article
Physics in Medicine and Biology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79956085078&partnerID=MN8TOARS
DOI: 10.1088/0031-9155/56/11/004
EID: 2-s2.0-79956085078
Editorial
Stutzmann, M.
2011
journal article
Green
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84896789404&partnerID=MN8TOARS
DOI: 10.1515/green.2011.010
EID: 2-s2.0-84896789404
Editorial
Stutzmann, M.
2011
journal article
Green
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84902202248&partnerID=MN8TOARS
DOI: 10.1515/GREEN.2011.019
EID: 2-s2.0-84902202248
Editorial: Phys. Status Solidi C 8/1
Stutzmann, M.
2011
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78751550223&partnerID=MN8TOARS
DOI: 10.1002/pssc.201160102
EID: 2-s2.0-78751550223
Editorial: Phys. Status Solidi RRL 1/2011
Stutzmann, M.
2011
journal article
Physica Status Solidi - Rapid Research Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650968300&partnerID=MN8TOARS
DOI: 10.1002/pssr.201150301
EID: 2-s2.0-78650968300
Efficiency enhancement in hybrid P3HT/silicon nanocrystal solar cells
Niesar, S., Fabian, W., Petermann, N., Herrmann, D., Riedle, E., Wiggers, H., Brandt, M.S., Stutzmann, M.
2011
journal article
Green
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84858405959&partnerID=MN8TOARS
DOI: 10.1515/GREEN.2011.034
EID: 2-s2.0-84858405959
Electrical detection of coherent nuclear spin oscillations in phosphorus-doped silicon using pulsed ENDOR
Hoehne, F., Dreher, L., Huebl, H., Stutzmann, M., Brandt, M.S.
2011
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960641552&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.106.187601
EID: 2-s2.0-79960641552
Electrically detected electron-spin-echo envelope modulation: A highly sensitive technique for resolving complex interface structures
Hoehne, F., Lu, J., Stegner, A.R., Stutzmann, M., Brandt, M.S., Rohrmüller, M., Schmidt, W.G., Gerstmann, U.
2011
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960618784&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.106.196101
EID: 2-s2.0-79960618784
Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination
Schoell, S.J., Howgate, J., Hoeb, M., Auernhammer, M., Garrido, J.A., Stutzmann, M., Brandt, M.S., Sharp, I.D.
2011
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79957450863&partnerID=MN8TOARS
DOI: 10.1063/1.3587767
EID: 2-s2.0-79957450863
Electroelastic hyperfine tuning of phosphorus donors in silicon
Dreher, L., Hilker, T.A., Brandlmaier, A., Goennenwein, S.T.B., Huebl, H., Stutzmann, M., Brandt, M.S.
2011
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78751529294&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.106.037601
EID: 2-s2.0-78751529294
Electrolyte-gated organic field-effect transistors for sensing applications
Buth, F., Kumar, D., Stutzmann, M., Garrido, J.A.
2011
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79954573202&partnerID=MN8TOARS
DOI: 10.1063/1.3581882
EID: 2-s2.0-79954573202
Epitaxial upward transport of Al at the beginning of the Al-induced layer exchange process
Birajdar, B., Antesberger, T., Stutzmann, M., Spiecker, E.
2011
journal article
Physica Status Solidi - Rapid Research Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79957670170&partnerID=MN8TOARS
DOI: 10.1002/pssr.201105110
EID: 2-s2.0-79957670170
Exciton confinement in homo-and heteroepitaxial ZnO/Zn 1- xMgxO quantum wells with x < 0.1
Laumer, B., Wassner, T.A., Schuster, F., Stutzmann, M., Schörmann, J., Rohnke, M., Chernikov, A., Bornwasser, V., Koch, M., Chatterjee, S., Eickhoff, M.
2011
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-81355132367&partnerID=MN8TOARS
DOI: 10.1063/1.3658020
EID: 2-s2.0-81355132367
Graphene transistor arrays for recording action potentials from electrogenic cells
Hess, L.H., Jansen, M., Maybeck, V., Hauf, M.V., Seifert, M., Stutzmann, M., Sharp, I.D., Offenhäusser, A., Garrido, J.A.
2011
journal article
Advanced Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-81255173334&partnerID=MN8TOARS
DOI: 10.1002/adma.201102990
EID: 2-s2.0-81255173334
High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon
Lu, J., Hoehne, F., Stegner, A.R., Dreher, L., Stutzmann, M., Brandt, M.S., Huebl, H.
2011
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79961189576&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.83.235201
EID: 2-s2.0-79961189576
High-transconductance graphene solution-gated field effect transistors
Hess, L.H., Hauf, M.V., Seifert, M., Speck, F., Seyller, T., Stutzmann, M., Sharp, I.D., Garrido, J.A.
2011
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960795965&partnerID=MN8TOARS
DOI: 10.1063/1.3614445
EID: 2-s2.0-79960795965
Hydrophobic interaction and charge accumulation at the diamond-electrolyte interface
Dankerl, M., Lippert, A., Birner, S., Stützel, E.U., Stutzmann, M., Garrido, J.A.
2011
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960636003&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.106.196103
EID: 2-s2.0-79960636003
On the temperature dependence of the resistive and surface ionisation response of SnO2 gas sensing layers
Oberhüttinger, C., Hackner, A., Müller, G., Stutzmann, M.
2011
journal article
Sensors and Actuators, B: Chemical
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79958108721&partnerID=MN8TOARS
DOI: 10.1016/j.snb.2011.01.069
EID: 2-s2.0-79958108721
Polymer brushes on graphene
Steenackers, M., Gigler, A.M., Zhang, N., Deubel, F., Seifert, M., Hess, L.H., Lim, C.H.Y.X., Loh, K.P., Garrido, J.A., Jordan, R., Stutzmann, M., Sharp, I.D.
2011
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960043613&partnerID=MN8TOARS
DOI: 10.1021/ja201052q
EID: 2-s2.0-79960043613
Purification of nano-porous silicon for biomedical applications
Koynov, S., Pereira, R.N., Crnolatac, I., Kovalev, D., Huygens, A., Chirvony, V., Stutzmann, M., De Witte, P.
2011
journal article
Advanced Engineering Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79957745744&partnerID=MN8TOARS
DOI: 10.1002/adem.201080091
EID: 2-s2.0-79957745744
Role of structural order and excess energy on ultrafast free charge generation in hybrid polythiophene/si photovoltaics probed in real time by near-infrared broadband transient absorption
Herrmann, D., Niesar, S., Scharsich, C., Köhler, A., Stutzmann, M., Riedle, E.
2011
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-80755129206&partnerID=MN8TOARS
DOI: 10.1021/ja207887q
EID: 2-s2.0-80755129206
Solution-processed networks of silicon nanocrystals: The role of internanocrystal medium on semiconducting behavior
Pereira, R.N., Niesar, S., You, W.B., Da Cunha, A.F., Erhard, N., Stegner, A.R., Wiggers, H., Willinger, M.-G., Stutzmann, M., Brandt, M.S.
2011
journal article
Journal of Physical Chemistry C
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-80054726085&partnerID=MN8TOARS
DOI: 10.1021/jp205984m
EID: 2-s2.0-80054726085
Biocompatibility assessment of Sic surfaces after functionalization with self assembled organic monolayers
Oliveros, A., Schoell, S.J., Frewin, C., Hoeb, M., Stutzmann, M., Sharp, I.D., Saddow, S.E.
2010
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957757111&partnerID=MN8TOARS
EID: 2-s2.0-77957757111
Combined TPRx, in situ GISAXS and GIXAS studies of model semiconductor-supported platinum catalysts in the hydrogenation of ethene
Wyrzgol, S.A., Schäfer, S., Lee, S., Lee, B., Di Vece, M., Li, X., Seifert, S., Winans, R.E., Stutzmann, M., Lercher, J.A., Vajda, S.
2010
journal article
Physical Chemistry Chemical Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77952920149&partnerID=MN8TOARS
DOI: 10.1039/b926493k
EID: 2-s2.0-77952920149
Controlling surface functionality through generation of thiol groups in a self-assembled monolayer
Lud, S.Q., Neppl, S., Richter, G., Bruno, P., Gruen, D.M., Jordan, R., Feulner, P., Stutzmann, M., Garrido, J.A.
2010
journal article
Langmuir
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957904582&partnerID=MN8TOARS
DOI: 10.1021/la102225r
EID: 2-s2.0-77957904582
Defect reduction in silicon nanoparticles by low-temperature vacuum annealing
Niesar, S., Stegner, A.R., Pereira, R.N., Hoeb, M., Wiggers, H., Brandt, M.S., Stutzmann, M.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77952971786&partnerID=MN8TOARS
DOI: 10.1063/1.3428359
EID: 2-s2.0-77952971786
Electronic properties of ultrananocrystalline diamond surfaces
Lud, S.Q., Niedermeier, M., Koch, P.S., Bruno, P., Gruen, D.M., Stutzmann, M., Garrido, J.A.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77949395218&partnerID=MN8TOARS
DOI: 10.1063/1.3340898
EID: 2-s2.0-77949395218
Electron spin resonance of Zn1-x Mgx O thin films grown by plasma-assisted molecular beam epitaxy
Wassner, T.A., Laumer, B., Althammer, M., Goennenwein, S.T.B., Stutzmann, M., Eickhoff, M., Brandt, M.S.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77956381720&partnerID=MN8TOARS
DOI: 10.1063/1.3477951
EID: 2-s2.0-77956381720
Graphene solution-gated field-effect transistor array for sensing applications
Dankerl, M., Hauf, M.V., Lippert, A., Hess, L.H., Birner, S., Sharp, I.D., Mahmood, A., Mallet, P., Veuillen, J.-Y., Stutzmann, M., Garrido, J.A.
2010
journal article
Advanced Functional Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957202500&partnerID=MN8TOARS
DOI: 10.1002/adfm.201000724
EID: 2-s2.0-77957202500
Interaction of hydrogen and oxygen with nanocrystalline diamond surfaces
Haensel, T., Ahmed, S.I.-U., Uhlig, J., Koch, R.J., Garrido, J.A., Stutzmann, M., Schaefer, J.A.
2010
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77958513235&partnerID=MN8TOARS
EID: 2-s2.0-77958513235
Isotope effect on electron paramagnetic resonance of boron acceptors in silicon
Stegner, A.R., Tezuka, H., Andlauer, T., Stutzmann, M., Thewalt, M.L.W., Brandt, M.S., Itoh, K.M.
2010
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77957599263&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.82.115213
EID: 2-s2.0-77957599263
Low-frequency noise in diamond solution-gated field effect transistors
Hauf, M.V., Hess, L.H., Howgate, J., Dankerl, M., Stutzmann, M., Garrido, J.A.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77956355702&partnerID=MN8TOARS
DOI: 10.1063/1.3483769
EID: 2-s2.0-77956355702
Optical characterization of AlGaN/GaN quantum disc structures in single nanowires
Rigutti, L., Fortuna, F., Tchernycheva, M., De Luna Bugallo, A., Jacopin, G., Julien, F.H., Furtmayr, F., Stutzmann, M., Eickhoff, M.
2010
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77955828696&partnerID=MN8TOARS
DOI: 10.1002/pssc.200983513
EID: 2-s2.0-77955828696
Origin of energy dispersion in Alx Ga1-x N/GaN nanowire quantum discs with low Al content
Rigutti, L., Teubert, J., Jacopin, G., Fortuna, F., Tchernycheva, M., De Luna Bugallo, A., Julien, F.H., Furtmayr, F., Stutzmann, M., Eickhoff, M.
2010
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650870277&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.82.235308
EID: 2-s2.0-78650870277
Paramagnetic states in μc-SiC:H thin films prepared by Hot-Wire CVD at low temperatures
Xiao, L., Astakhov, O., Carius, R., Chen, T., Wang, H., Stutzmann, M., Finger, F.
2010
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77952580620&partnerID=MN8TOARS
DOI: 10.1002/pssc.200982871
EID: 2-s2.0-77952580620
Photocatalytic cleavage of self-Assembled organic monolayers by UV-lnduced charge transfer from CaN Substrates
Howgate, J., Schoell, S.J., Hoeb, M., Steins, W., Baur, B., Henrich, S., Nickel, B., Sharp, I.D., Stutzmann, M., Eickhoff, M.
2010
journal article
Advanced Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77954843479&partnerID=MN8TOARS
DOI: 10.1002/adma.200903756
EID: 2-s2.0-77954843479
Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
Stallhofer, M., Seifert, M., Hauf, M.V., Abstreiter, G., Stutzmann, M., Garrido, J.A., Holleitner, A.W.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77956797665&partnerID=MN8TOARS
DOI: 10.1063/1.3487785
EID: 2-s2.0-77956797665
Photoluminescence polarization properties of single GaN nanowires containing Alx Ga1-x N/GaN quantum discs
Rigutti, L., Tchernycheva, M., De Luna Bugallo, A., Jacopin, G., Julien, F.H., Furtmayr, F., Stutzmann, M., Eickhoff, M., Songmuang, R., Fortuna, F.
2010
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77954823808&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.81.045411
EID: 2-s2.0-77954823808
Platinum nanoparticles deposited on wide-bandgap semiconductor surfaces for catalytic applications
Schäfer, S., Wyrzgol, S.A., Wang, Y., Lercher, J.A., Stutzmann, M.
2010
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77954322581&partnerID=MN8TOARS
DOI: 10.1002/pssc.200982454
EID: 2-s2.0-77954322581
Random pn-junctions for physical cryptography
Jaeger, C., Algasinger, M., Rührmair, U., Csaba, G., Stutzmann, M.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77952336010&partnerID=MN8TOARS
DOI: 10.1063/1.3396186
EID: 2-s2.0-77952336010
Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices
Hofstetter, M., Howgate, J., Sharp, I.D., Funk, M., Stutzmann, M., Paretzke, H.G., Thalhammer, S.
2010
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77949407097&partnerID=MN8TOARS
DOI: 10.1063/1.3334682
EID: 2-s2.0-77949407097
Security applications of diodes with unique current-voltage characteristics
Rührmair, U., Jaeger, C., Hilgers, C., Algasinger, M., Csaba, G., Stutzmann, M.
2010
book
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77955319391&partnerID=MN8TOARS
DOI: 10.1007/978-3-642-14577-3_26
EID: 2-s2.0-77955319391
Spin-dependent recombination between phosphorus donors in silicon and Si/SiO2 interface states investigated with pulsed electrically detected electron double resonance
Hoehne, F., Huebl, H., Galler, B., Stutzmann, M., Brandt, M.S.
2010
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-75849122532&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.104.046402
EID: 2-s2.0-75849122532
Structured polymer brushes on silicon carbide
Steenackers, M., Sharp, I.D., Larsson, K., Hutter, N.A., Stutzmann, M., Jordan, R.
2010
journal article
Chemistry of Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-74949130189&partnerID=MN8TOARS
DOI: 10.1021/cm903051j
EID: 2-s2.0-74949130189
The best of pss
Stutzmann, M.
2010
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-74549217433&partnerID=MN8TOARS
DOI: 10.1002/pssb.201040701
EID: 2-s2.0-74549217433
The best of pss
Stutzmann, M.
2010
journal article
Physica Status Solidi - Rapid Research Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-76449085526&partnerID=MN8TOARS
DOI: 10.1002/pssr.201050202
EID: 2-s2.0-76449085526
Thermally induced alkylation of diamond
Hoeb, M., Auernhammer, M., Schoell, S.J., Brandt, M.S., Garrido, J.A., Stutzmann, M., Sharp, I.D.
2010
journal article
Langmuir
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650191421&partnerID=MN8TOARS
DOI: 10.1021/la103741s
EID: 2-s2.0-78650191421
Thin film solar cells prepared on low thermal budget polycrystalline silicon seed layers
Jaeger, C., Matsui, T., Takeuchi, M., Karasawa, M., Kondo, M., Stutzmann, M.
2010
journal article
Japanese Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79551616362&partnerID=MN8TOARS
DOI: 10.1143/JJAP.49.112301
EID: 2-s2.0-79551616362
Towards electrical, integrated implementations of SIMPL systems
Rührmair, U., Chen, Q., Stutzmann, M., Lugli, P., Schlichtmann, U., Csaba, G.
2010
book
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650352335&partnerID=MN8TOARS
DOI: 10.1007/978-3-642-12368-9_22
EID: 2-s2.0-78650352335
Two-step crystallization during the reverse aluminum-induced layer exchange process
Jaeger, C., Bator, M., Matich, S., Stutzmann, M.
2010
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-78751475805&partnerID=MN8TOARS
DOI: 10.1063/1.3517470
EID: 2-s2.0-78751475805
Analog circuits for physical cryptography
Chen, Q., Csaba, G., Ju, X., Natarajan, S.B., Lugli, P., Stutzmann, M., Schlichtmann, U., Rührmair, U.
2009
conference paper
ISIC-2009 - 12th International Symposium on Integrated Circuits, Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77950455745&partnerID=MN8TOARS
EID: 2-s2.0-77950455745
Diamond transistor array for extracellular recording from electrogenic cells
Dankerl, M., Eick, S., Hofmann, B., Ingebrandt, M.H.S., Offenhäusser, A., Stutzmann, M., Garrido, J.A.
2009
journal article
Advanced Functional Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349525160&partnerID=MN8TOARS
DOI: 10.1002/adfm.200900590
EID: 2-s2.0-70349525160
Dielectric screening versus quantum confinement of phosphorus donors in silicon nanocrystals investigated by magnetic resonance
Pereira, R.N., Stegner, A.R., Andlauer, T., Klein, K., Wiggers, H., Brandt, M.S., Stutzmann, M.
2009
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-67650280587&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.79.161304
EID: 2-s2.0-67650280587
Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
Stegner, A.R., Pereira, R.N., Lechner, R., Klein, K., Wiggers, H., Stutzmann, M., Brandt, M.S.
2009
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-72849123428&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.80.165326
EID: 2-s2.0-72849123428
Editorial
Stutzmann, M.
2009
journal article
Physica Status Solidi - Rapid Research Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-70449635637&partnerID=MN8TOARS
DOI: 10.1002/pssr.200950101
EID: 2-s2.0-70449635637
Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM
Herrera, M., Cremades, A., Stutzmann, M., Piqueras, J.
2009
journal article
Superlattices and Microstructures
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-62949217555&partnerID=MN8TOARS
DOI: 10.1016/j.spmi.2008.12.023
EID: 2-s2.0-62949217555
Electrochemical impedance spectroscopy of oxidized and hydrogen-terminated nitrogen-induced conductive ultrananocrystalline diamond
Hernando, J., Lud, S.Q., Bruno, P., Gruen, D.M., Stutzmann, M., Garrido, J.A.
2009
journal article
Electrochimica Acta
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-58249131550&partnerID=MN8TOARS
DOI: 10.1016/j.electacta.2008.10.041
EID: 2-s2.0-58249131550
Electronic and optical properties of boron-doped nanocrystalline diamond films
Gajewski, W., Achatz, P., Williams, O.A., Haenen, K., Bustarret, E., Stutzmann, M., Garrido, J.A.
2009
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-59249094661&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.79.045206
EID: 2-s2.0-59249094661
GaN/AlN axial multi quantum well nanowires for optoelectronic devices
Conesa-Boj, S., Arbiol, J., Furtmayr, F., Stark, C., Scḧfer, S., Stutzmann, M., Eickhoff, M., Peiró, F., Morante, J.R.
2009
conference paper
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-65249180042&partnerID=MN8TOARS
DOI: 10.1109/SCED.2009.4800430
EID: 2-s2.0-65249180042
GaN quantum dots as optical transducers for chemical sensors
Weidemann, O., Kandaswamy, P.K., Monroy, E., Jegert, G., Stutzmann, M., Eickhoff, M.
2009
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-63049084354&partnerID=MN8TOARS
DOI: 10.1063/1.3100301
EID: 2-s2.0-63049084354
Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS
Haensel, T., Uhlig, J., Koch, R.J., Ahmed, S.I.-U., Garrido, J.A., Steinmüller-Nethl, D., Stutzmann, M., Schaefer, J.A.
2009
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349108376&partnerID=MN8TOARS
DOI: 10.1002/pssa.200982202
EID: 2-s2.0-70349108376
Light-induced charge transfer in hybrid composites of organic semiconductors and silicon nanocrystals
Dietmueller, R., Stegner, A.R., Lechner, R., Niesar, S., Pereira, R.N., Brandt, M.S., Ebbers, A., Trocha, M., Wiggers, H., Stutzmann, M.
2009
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-63049113390&partnerID=MN8TOARS
DOI: 10.1063/1.3086299
EID: 2-s2.0-63049113390
Low-temperature transport in highly boron-doped nanocrystalline diamond
Achatz, P., Gajewski, W., Bustarret, E., Marcenat, C., Piquerel, R., Chapelier, C., Dubouchet, T., Williams, O.A., Haenen, K., Garrido, J.A., Stutzmann, M.
2009
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-66849126077&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.79.201203
EID: 2-s2.0-66849126077
Manganese-hydrogen complexes in Ga1-x Mnx N
Bihler, C., Gerstmann, U., Hoeb, M., Graf, T., Gjukic, M., Schmidt, W.G., Stutzmann, M., Brandt, M.S.
2009
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77954755654&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.80.205205
EID: 2-s2.0-77954755654
Metal-insulator transition and superconductivity in highly boron-doped nanocrystalline diamond films
Achatz, P., Bustarret, E., Marcenat, C., Piquerel, R., Dubouchet, T., Chapelier, C., Bonnot, A.M., Williams, O.A., Haenen, K., Gajewski, W., Garrido, J.A., Stutzmann, M.
2009
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349101640&partnerID=MN8TOARS
DOI: 10.1002/pssa.200982233
EID: 2-s2.0-70349101640
Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy
Wassner, T.A., Laumer, B., Maier, S., Laufer, A., Meyer, B.K., Stutzmann, M., Eickhoff, M.
2009
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-59349115173&partnerID=MN8TOARS
DOI: 10.1063/1.3065535
EID: 2-s2.0-59349115173
Ordered Si nanoaperture arrays for the measurement of ion currents across lipid membranes
Koynov, S., Brandt, M.S., Stutzmann, M.
2009
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-67650711846&partnerID=MN8TOARS
DOI: 10.1063/1.3171931
EID: 2-s2.0-67650711846
Photoresponse and morphology of pentacene thin films modified by oxidized and reduced diamond surfaces
Gajewski, W., Huth, M., Buth, F., Nickel, B., Stutzmann, M., Garrido, J.A.
2009
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-77954717015&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.80.235311
EID: 2-s2.0-77954717015
Physica status solidi (A) applications and materials: Editorial
Stutzmann, M.
2009
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-58449092700&partnerID=MN8TOARS
DOI: 10.1002/pssa.200921651
EID: 2-s2.0-58449092700
Physica Status Solidi (B) Basic Research: Editorial
Stutzmann, M.
2009
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-58449126140&partnerID=MN8TOARS
DOI: 10.1002/pssb.200940601
EID: 2-s2.0-58449126140
Physica Status Solidi (C) Current Topics in Solid State Physics: Editorial
Stutzmann, M.
2009
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-63449104307&partnerID=MN8TOARS
DOI: 10.1002/pssc.200960040
EID: 2-s2.0-63449104307
Silicon/organic semiconductor heterojunctions for solar cells
Niesar, S., Dietmueller, R., Nesswetter, H., Wiggers, H., Stutzmann, M.
2009
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-73849151762&partnerID=MN8TOARS
DOI: 10.1002/pssa.200925322
EID: 2-s2.0-73849151762
Silver-induced layer exchange for the low-temperature preparation of intrinsic polycrystalline silicon films
Scholz, M., Gjukic, M., Stutzmann, M.
2009
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-58149523071&partnerID=MN8TOARS
DOI: 10.1063/1.3059560
EID: 2-s2.0-58149523071
Strain effects and phonon-plasmon coupled modes in Si-doped AlN
Gómez-Gómez, M., Cros, A., Hermann, M., Stutzmann, M., Eickhoff, M.
2009
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-67649965933&partnerID=MN8TOARS
DOI: 10.1002/pssa.200880852
EID: 2-s2.0-67649965933
Triple-twin domains in Mg doped GaN wurtzite nanowires: Structural and electronic properties of this zinc-blende-like stacking
Arbiol, J., Estradé, S., Prades, J.D., Cirera, A., Furtmayr, F., Stark, C., Laufer, A., Stutzmann, M., Eickhoff, M., Gass, M.H., Bleloch, A.L., Peiró, F., Morante, J.R.
2009
journal article
Nanotechnology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-65549092701&partnerID=MN8TOARS
DOI: 10.1088/0957-4484/20/14/145704
EID: 2-s2.0-65549092701
Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage
Encabo, A.B., Howgate, J., Stutzmann, M., Eickhoff, M., Sánchez-García, M.A.
2009
journal article
Sensors and Actuators, B: Chemical
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349241520&partnerID=MN8TOARS
DOI: 10.1016/j.snb.2009.07.016
EID: 2-s2.0-70349241520
15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors: Editorial
Stutzmann, M.
2008
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-45749107744&partnerID=MN8TOARS
DOI: 10.1002/pssc.200860001
EID: 2-s2.0-45749107744
Editorial
Stutzmann, M.
2008
journal article
Physica Status Solidi - Rapid Research Letetrs
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38849114949&partnerID=MN8TOARS
DOI: 10.1002/pssr.200850040
EID: 2-s2.0-38849114949
Electronic properties of doped silicon nanocrystal films
Lechner, R., Stegner, A.R., Pereira, R.N., Dietmueller, R., Brandt, M.S., Ebbers, A., Trocha, M., Wiggers, H., Stutzmann, M.
2008
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-51849130350&partnerID=MN8TOARS
DOI: 10.1063/1.2973399
EID: 2-s2.0-51849130350
Electronic properties of self-assembled alkyl monolayers on Ge surfaces
Sharp, I.D., Schoell, S.J., Hoeb, M., Brandt, M.S., Stutzmann, M.
2008
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-44849122797&partnerID=MN8TOARS
DOI: 10.1063/1.2939221
EID: 2-s2.0-44849122797
Electronic transport in phosphorus-doped silicon nanocrystal networks
Stegner, A.R., Pereira, R.N., Klein, K., Lechner, R., Dietmueller, R., Brandt, M.S., Stutzmann, M., Wiggers, H.
2008
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38349187612&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.100.026803
EID: 2-s2.0-38349187612
Enzyme-modified field effect transistors based on surface-conductive single-crystalline diamond
Härtl, A., Baur, B., Stutzmann, M., Garrido, J.A.
2008
journal article
Langmuir
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-51449104133&partnerID=MN8TOARS
DOI: 10.1021/la8014139
EID: 2-s2.0-51449104133
Functionalization of 6H-SiC surfaces with organosilanes
Schoell, S.J., Hoeb, M., Sharp, I.D., Steins, W., Eickhoff, M., Stutzmann, M., Brandt, M.S.
2008
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-42349085708&partnerID=MN8TOARS
DOI: 10.1063/1.2908871
EID: 2-s2.0-42349085708
Hydrogen passivation of ultra-thin low-temperature polycrystalline silicon films for electronic applications
Jaeger, C., Antesberger, T., Stutzmann, M.
2008
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-42649138213&partnerID=MN8TOARS
DOI: 10.1016/j.jnoncrysol.2007.09.040
EID: 2-s2.0-42649138213
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
Furtmayr, F., Vielemeyer, M., Stutzmann, M., Arbiol, J., Estrad́, S., Peir, F., Morante, J.R., Eickhoff, M.
2008
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-49749105269&partnerID=MN8TOARS
DOI: 10.1063/1.2953087
EID: 2-s2.0-49749105269
Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy
Furtmayr, F., Vielemeyer, M., Stutzmann, M., Laufer, A., Meyer, B.K., Eickhoff, M.
2008
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-54049124108&partnerID=MN8TOARS
DOI: 10.1063/1.2980341
EID: 2-s2.0-54049124108
Physica Status Solidi (A) Applications and Materials: Editorial
Stutzmann, M.
2008
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38849088113&partnerID=MN8TOARS
DOI: 10.1002/pssa.200821600
EID: 2-s2.0-38849088113
Physica Status Solidi (B) Basic Research: Editorial
Stutzmann, M.
2008
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38549122380&partnerID=MN8TOARS
DOI: 10.1002/pssb.200840501
EID: 2-s2.0-38549122380
Resolving the controversy on the pH sensitivity of diamond surfaces
Dankerl, M., Reitinger, A., Stutzmann, M., Garrido, J.A.
2008
journal article
Physica Status Solidi - Rapid Research Letetrs
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38849090591&partnerID=MN8TOARS
DOI: 10.1002/pssr.200701266
EID: 2-s2.0-38849090591
Spin echoes in the charge transport through phosphorus donors in silicon
Huebl, H., Hoehne, F., Grolik, B., Stegner, A.R., Stutzmann, M., Brandt, M.S.
2008
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-43049096771&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.100.177602
EID: 2-s2.0-43049096771
The diamond/aqueous electrolyte interface: An impedance investigation
Garrido, J.A., Nowy, S., Härtl, A., Stutzmann, M.
2008
journal article
Langmuir
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-42449101261&partnerID=MN8TOARS
DOI: 10.1021/la703413y
EID: 2-s2.0-42449101261
The surface conductivity at the diamond/aqueous electrolyte interface
Garrido, J.A., Härtl, A., Dankerl, M., Reitinger, A., Eickhoff, M., Helwig, A., Müller, G., Stutzmann, M.
2008
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-41149101875&partnerID=MN8TOARS
DOI: 10.1021/ja078207g
EID: 2-s2.0-41149101875
Ultra-thin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange
Antesberger, T., Jaeger, C., Stutzmann, M.
2008
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-42649110040&partnerID=MN8TOARS
DOI: 10.1016/j.jnoncrysol.2007.09.038
EID: 2-s2.0-42649110040
Black multi-crystalline silicon solar cells
Koynov, S., Brandt, M.S., Stutzmann, M.
2007
journal article
Physica Status Solidi - Rapid Research Letetrs
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38749096218&partnerID=MN8TOARS
DOI: 10.1002/pssr.200600064
EID: 2-s2.0-38749096218
Electronic transport through Si nanocrystal films: Spin-dependent conductivity studies
Pereira, R.N., Stegner, A.R., Klein, K., Lechner, R., Dietmueller, R., Wiggers, H., Brandt, M.S., Stutzmann, M.
2007
journal article
Physica B: Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36048964238&partnerID=MN8TOARS
DOI: 10.1016/j.physb.2007.09.014
EID: 2-s2.0-36048964238
Fabrication of freestanding GaN microstructures using AIN sacrificial layers
Zaus, E., Hermann, M., Stutzmann, M., Eickhoff, M.
2007
journal article
Physica Status Solidi - Rapid Research Letetrs
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38749097348&partnerID=MN8TOARS
DOI: 10.1002/pssr.200600063
EID: 2-s2.0-38749097348
GaN quantum dots as optical transducers in field effect chemical sensors
Weidemann, O., Jegert, G., Birner, S., Stutzmann, M., Eickhoff, M., Monroy, E.
2007
conference paper
Proceedings of IEEE Sensors
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-48349101083&partnerID=MN8TOARS
DOI: 10.1109/ICSENS.2007.4388617
EID: 2-s2.0-48349101083
Immobilization of horseradish peroxidase via an amino silane on oxidized ultrananocrystalline diamond
Hernando, J., Pourrostami, T., Garrido, J.A., Williams, O.A., Gruen, D.M., Kromka, A., Steinmüller, D., Stutzmann, M.
2007
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33751328553&partnerID=MN8TOARS
DOI: 10.1016/j.diamond.2006.04.005
EID: 2-s2.0-33751328553
It's time to celebrate!
Stutzmann, M.
2007
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33847056287&partnerID=MN8TOARS
DOI: 10.1002/pssb.200690029
EID: 2-s2.0-33847056287
It's time to celebrate!
Stutzmann, M.
2007
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-49549108716&partnerID=MN8TOARS
EID: 2-s2.0-49549108716
It's time to celebrate!
Stutzmann, M.
2007
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33846453982&partnerID=MN8TOARS
EID: 2-s2.0-33846453982
Light-induced dielectrophoretic manipulation of DNA
Hoeb, M., Rädler, J.O., Klein, S., Stutzmann, M., Brandt, M.S.
2007
journal article
Biophysical Journal
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-34547702257&partnerID=MN8TOARS
DOI: 10.1529/biophysj.106.101188
EID: 2-s2.0-34547702257
Phosphorus doping of Si nanocrystals: Interface defects and charge compensation
Stegner, A.R., Pereira, R.N., Klein, K., Wiggers, H., Brandt, M.S., Stutzmann, M.
2007
journal article
Physica B: Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36048967904&partnerID=MN8TOARS
DOI: 10.1016/j.physb.2007.09.017
EID: 2-s2.0-36048967904
Pss papid research letters - The fastest peer-reviewed publication medium in solid state physics
Stutzmann, M.
2007
journal article
Physica Status Solidi - Rapid Research Letetrs
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38749141337&partnerID=MN8TOARS
DOI: 10.1002/pssr.200750005
EID: 2-s2.0-38749141337
Pss rapid research letters - The fastest peer-reviewed publication medium in solid state physics
Stutzmann, M.
2007
journal article
Physica Status Solidi - Rapid Research Letetrs
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-38749132820&partnerID=MN8TOARS
DOI: 10.1002/pssr.200750008
EID: 2-s2.0-38749132820
Structural and electronic properties of ultrathin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange
Antesberger, T., Jaeger, C., Scholz, M., Stutzmann, M.
2007
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36248942957&partnerID=MN8TOARS
DOI: 10.1063/1.2803072
EID: 2-s2.0-36248942957
Structural, optical, and electronic properties of nanocrystalline and ultrananocrystalline diamond thin films
Achatz, P., Garrido, J.A., Williams, O.A., Bruno, P., Gruen, D.M., Kromka, A., Steinmüller, D., Stutzmann, M.
2007
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-34548801958&partnerID=MN8TOARS
DOI: 10.1002/pssa.200776337
EID: 2-s2.0-34548801958
Structured polymer grafts on diamond
Steenackers, M., Lud, S.Q., Niedermeier, M., Bruno, P., Gruen, D.M., Feulner, P., Stutzmann, M., Garrido, J.A., Jordan, R.
2007
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-37849031779&partnerID=MN8TOARS
DOI: 10.1021/ja075378c
EID: 2-s2.0-37849031779
The ion sensitivity of surface conductive single crystalline diamond
Härtl, A., Garrido, J.A., Nowy, S., Zimmermann, R., Werner, C., Horinek, D., Netz, R., Stutzmann, M.
2007
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33846817236&partnerID=MN8TOARS
DOI: 10.1021/ja066543b
EID: 2-s2.0-33846817236
Thermoelectric effect in laser annealed printed nanocrystalline silicon layers
Lechner, R., Wiggers, H., Ebbers, A., Steiger, J., Brandt, M.S., Stutzmann, M.
2007
journal article
Physica Status Solidi - Rapid Research Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-41349118415&partnerID=MN8TOARS
DOI: 10.1002/pssr.200701198
EID: 2-s2.0-41349118415
Black nonreflecting silicon surfaces for solar cells
Koynov, S., Brandt, M.S., Stutzmann, M.
2006
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33646877101&partnerID=MN8TOARS
DOI: 10.1063/1.2204573
EID: 2-s2.0-33646877101
Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors
Baur, B., Howgate, J., Von Ribbeck, H.-G., Gawlina, Y., Bandalo, V., Steinhoff, G., Stutzmann, M., Eickhoff, M.
2006
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33750728924&partnerID=MN8TOARS
DOI: 10.1063/1.2369534
EID: 2-s2.0-33750728924
Chemical grafting of biphenyl self-assembled monolayers on ultrananocrystalline diamond
Lud, S.Q., Steenackers, M., Jordan, R., Bruno, P., Gruen, D.M., Feulner, P., Garrido, J.A., Stutzmann, M.
2006
journal article
Journal of the American Chemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33845936561&partnerID=MN8TOARS
DOI: 10.1021/ja0657049
EID: 2-s2.0-33845936561
Dear colleagues and friends
Stutzmann, M.
2006
journal article
Materialwissenschaft und Werkstofftechnik
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33744486096&partnerID=MN8TOARS
EID: 2-s2.0-33744486096
Direct biofunctionalization of semiconductors: A survey
Stutzmann, M., Garrido, J.A., Eickhoff, M., Brandt, M.S.
2006
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-34248371218&partnerID=MN8TOARS
DOI: 10.1002/pssa.200622512
EID: 2-s2.0-34248371218
Editorial: Phys. stat. sol. (c) 3/1
Stutzmann, M.
2006
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84877816303&partnerID=MN8TOARS
DOI: 10.1002/pssc.200690003
EID: 2-s2.0-84877816303
Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates
Achatz, P., Williams, O.A., Bruno, P., Gruen, D.M., Garrido, J.A., Stutzmann, M.
2006
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33750465168&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.74.155429
EID: 2-s2.0-33750465168
Electrical detection of coherent 31P spin quantum states
Stegner, A.R., Boehme, C., Huebl, H., Stutzmann, M., Lips, K., Brandt, M.S.
2006
journal article
Nature Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33845226420&partnerID=MN8TOARS
DOI: 10.1038/nphys465
EID: 2-s2.0-33845226420
Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
Winzer, A.T., Goldhahn, R., Gobsch, G., Dadgar, A., Krost, A., Weidemann, O., Stutzmann, M., Eickhoff, M.
2006
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-30744436537&partnerID=MN8TOARS
DOI: 10.1063/1.2161394
EID: 2-s2.0-30744436537
Erratum: Recording of cell action potentials with AIGaN/GaN field-effect transistors (Applied Physics Letters (2005) 86 (033901))
Steinhoff, G., Baur, B., Wrobel, G., Ingebrandt, S., Offenhäusser, A., Dadgar, A., Krost, A., Stutzmann, M., Eickhoff, M.
2006
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33745779646&partnerID=MN8TOARS
DOI: 10.1063/1.2219129
EID: 2-s2.0-33745779646
Impact of silicon incorporation on the formation of structural defects in AlN
Hermann, M., Furtmayr, F., Morales, F.M., Ambacher, O., Stutzmann, M., Eickhoff, M.
2006
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33845809196&partnerID=MN8TOARS
DOI: 10.1063/1.2363239
EID: 2-s2.0-33845809196
Indium nitride and indium rich related alloys: Challenges and opportunities
Leszczynski, M., Ruterana, P., Stutzmann, M., Wood, C.
2006
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-31144438166&partnerID=MN8TOARS
DOI: 10.1002/pssa.200690001
EID: 2-s2.0-31144438166
Luminescence properties of highly Si-doped AlN
Monroy, E., Zenneck, J., Cherkashinin, G., Ambacher, O., Hermann, M., Stutzmann, M., Eickhoff, M.
2006
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-32944473005&partnerID=MN8TOARS
DOI: 10.1063/1.2173622
EID: 2-s2.0-32944473005
Metal-induced seeding of macropore arrays in silicon
Koynov, S., Brandt, M.S., Stutzmann, M.
2006
journal article
Advanced Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33644899941&partnerID=MN8TOARS
DOI: 10.1002/adma.200501179
EID: 2-s2.0-33644899941
Nearly stress-free substrates for GaN homoepitaxy
Hermann, M., Gogova, D., Siche, D., Schmidbauer, M., Monemar, B., Stutzmann, M., Eickhoff, M.
2006
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33746390958&partnerID=MN8TOARS
DOI: 10.1016/j.jcrysgro.2006.05.058
EID: 2-s2.0-33746390958
Optical properties of nanocrystalline diamond thin films
Achatz, P., Garrido, J.A., Stutzmann, M., Williams, O.A., Gruen, D.M., Kromka, A., Steinmüller, D.
2006
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33644894480&partnerID=MN8TOARS
DOI: 10.1063/1.2183366
EID: 2-s2.0-33644894480
Phosphorus donors in highly strained silicon
Huebl, H., Stegner, A.R., Stutzmann, M., Brandt, M.S., Vogg, G., Bensch, F., Rauls, E., Gerstmann, U.
2006
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33750216376&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.97.166402
EID: 2-s2.0-33750216376
Physica Status Solidi (A) Applied Research: Editorial
Stutzmann, M.
2006
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-31144440870&partnerID=MN8TOARS
DOI: 10.1002/pssa.200690003
EID: 2-s2.0-31144440870
Physica Status Solidi (B) Basic Research: Editorial
Stutzmann, M.
2006
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-31144449348&partnerID=MN8TOARS
DOI: 10.1002/pssb.200690001
EID: 2-s2.0-31144449348
pss rapid research letters - The fastest peer-reviewed publication medium in solid state physics
Stutzmann, M.
2006
journal article
Physica Status Solidi (C) Current Topics in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-49549108704&partnerID=MN8TOARS
DOI: 10.1002/pssc.200672873
EID: 2-s2.0-49549108704
Synthetic nanocrystalline diamond as a third-generation biosensor support
Rubio-Retama, J., Hernando, J., López-Ruiz, B., Härtl, A., Steinmüller, D., Stutzmann, M., López-Cabarcos, E., Garrido, J.A.
2006
journal article
Langmuir
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33745762809&partnerID=MN8TOARS
DOI: 10.1021/la060167r
EID: 2-s2.0-33745762809
AlGaN/GaN electrolyte-gate field-effect transistors as transducers for bio electronic devices
Steinhoff, G., Baur, B., Von Ribbeck, H.-G., Wrobel, G., Ingebrandt, S., Offenhäusser, A., Stutzmann, M., Eickhoff, M.
2005
book
Advances in Solid State Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-34047184787&partnerID=MN8TOARS
EID: 2-s2.0-34047184787
A novel laser-liquid-solid interaction process for hydroxyapatite formation on porous silicon
Pramatarova, L., Pecheva, E., Dimova-Malinovska, D., Presker, R., Stutzmann, M., Schwarz, U., Kniep, R.
2005
conference paper
Proceedings of SPIE - The International Society for Optical Engineering
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-27744508675&partnerID=MN8TOARS
DOI: 10.1117/12.618423
EID: 2-s2.0-27744508675
Bio-interfacing of diamond films for sensor applications
Härtl, A., Nowy, S., Hernando, J., Garrido, J.A., Stutzmann, M.
2005
conference paper
Proceedings of IEEE Sensors
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33847313700&partnerID=MN8TOARS
DOI: 10.1109/ICSENS.2005.1597744
EID: 2-s2.0-33847313700
Chemical functionalization of GaN and AlN surfaces
Baur, B., Steinhoff, G., Hernando, J., Purrucker, O., Tanaka, M., Nickel, B., Stutzmann, M., Eickhoff, M.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-29744443534&partnerID=MN8TOARS
DOI: 10.1063/1.2150280
EID: 2-s2.0-29744443534
Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance
Klein, S., Finger, F., Carius, R., Stutzmann, M.
2005
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-23844507299&partnerID=MN8TOARS
DOI: 10.1063/1.1957128
EID: 2-s2.0-23844507299
Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
Hermann, M., Furtmayr, F., Bergmaier, A., Dollinger, G., Stutzmann, M., Eickhoff, M.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-20844436445&partnerID=MN8TOARS
DOI: 10.1063/1.1923180
EID: 2-s2.0-20844436445
Hydroxyapatite growth induced by native extracellular matrix deposition on solid surfaces
Pramatarova, L., Pecheva, E., Presker, R., Pham, M.T., Maitz, M.F., Stutzmann, M.
2005
journal article
European Cells and Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-22444438217&partnerID=MN8TOARS
EID: 2-s2.0-22444438217
Hydroxyapatite kinetic deposition on solid substrates induced by laser-liquid-solid interaction
Pramatarova, L., Pecheva, E., Petrov, T., Presker, R., Stutzmann, M.
2005
conference paper
Proceedings of SPIE - The International Society for Optical Engineering
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-27744525432&partnerID=MN8TOARS
DOI: 10.1117/12.619002
EID: 2-s2.0-27744525432
Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy
Weidemann, O., Monroy, E., Hahn, E., Stutzmann, M., Eickhoff, M.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044386623&partnerID=MN8TOARS
DOI: 10.1063/1.1868863
EID: 2-s2.0-17044386623
Mn-rich clusters in GaN: Hexagonal or cubic symmetry?
Martínez-Criado, G., Somogyi, A., Ramos, S., Campo, J., Tucoulou, R., Salome, M., Susini, J., Hermann, M., Eickhoff, M., Stutzmann, M.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-20244378230&partnerID=MN8TOARS
DOI: 10.1063/1.1886908
EID: 2-s2.0-20244378230
Optical and electrical properties of polycrystalline silicon-germanium thin films prepared by aluminum-induced layer exchange
Gjukic, M., Lechner, R., Buschbeck, M., Stutzmann, M.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18644366049&partnerID=MN8TOARS
DOI: 10.1063/1.1863443
EID: 2-s2.0-18644366049
Patterned surfaces for in vitro hydroxyapatite growth
Pramatarova, L., Pecheva, E., Presker, R., Stutzmann, M., Hanzlik, M.
2005
journal article
Journal of Optoelectronics and Advanced Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-15244353029&partnerID=MN8TOARS
EID: 2-s2.0-15244353029
PH sensors based on hydrogenated diamond surfaces
Garrido, J.A., Härtl, A., Kuch, S., Stutzmann, M., Williams, O.A., Jackmann, R.B.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044434314&partnerID=MN8TOARS
DOI: 10.1063/1.1866632
EID: 2-s2.0-17044434314
Physica Status Solidi (A) Applied Research: Editorial
Stutzmann, M.
2005
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-25444482794&partnerID=MN8TOARS
DOI: 10.1002/pssa.200590002
EID: 2-s2.0-25444482794
Physica Status Solidi (A) Applied Research: Preface
Neumann, W., Stutzmann, M., Hildebrandt, S.
2005
journal article
Physica Status Solidi (A) Applications and Materials Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-26444618614&partnerID=MN8TOARS
EID: 2-s2.0-26444618614
Physica Status Solidi C: Conferences: Editorial
Stutzmann, M.
2005
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-27344455133&partnerID=MN8TOARS
DOI: 10.1002/pssc.200490029
EID: 2-s2.0-27344455133
Recording of cell action potentials with AlGaNGaN field-effect transistors
Steinhoff, G., Baur, B., Wrobel, G., Ingebrandt, S., Offenhäusser, A., Dadgar, A., Krost, A., Stutzmann, M., Eickhoff, M.
2005
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044370793&partnerID=MN8TOARS
DOI: 10.1063/1.1853531
EID: 2-s2.0-17044370793
Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels
Garrido, J.A., Heimbeck, T., Stutzmann, M.
2005
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-28244459374&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.71.245310
EID: 2-s2.0-28244459374
Aluminum-induced crystallization of amorphous silicon-germanium thin films
Gjukic, M., Buschbeck, M., Lechner, R., Stutzmann, M.
2004
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5544264932&partnerID=MN8TOARS
DOI: 10.1063/1.1789245
EID: 2-s2.0-5544264932
Direct observation of Mn clusters in GaN by X-ray scanning microscopy
Martínez-Criado, G., Somogyi, A., Hermann, M., Eickhoff, M., Stutzmann, M.
2004
journal article
Japanese Journal of Applied Physics, Part 2: Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3242771355&partnerID=MN8TOARS
EID: 2-s2.0-3242771355
Doping and its efficiency in a-SiOx:H
Janotta, A., Janssen, R., Schmidt, M., Graf, T., Stutzmann, M., Görgens, L., Bergmaier, A., Dollinger, G., Hammerl, C., Schreiber, S., Stritzker, B.
2004
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18244424267&partnerID=MN8TOARS
EID: 2-s2.0-18244424267
Doping-level-dependent optical properties of GaN:Mn
Gelhausen, O., Malguth, E., Phillips, M.R., Goldys, E.M., Strassburg, M., Hoffmann, A., Graf, T., Gjukic, M., Stutzmann, M.
2004
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3042824548&partnerID=MN8TOARS
DOI: 10.1063/1.1757641
EID: 2-s2.0-3042824548
Electron injection-induced effects in Mn-doped GaN
Burdett, W., Lopatiuk, O., Chernyak, L., Hermann, M., Stutzmann, M., Eickhoff, M.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4944261470&partnerID=MN8TOARS
DOI: 10.1063/1.1780606
EID: 2-s2.0-4944261470
High quality heteroepitaxial AIN films on diamond
Vogg, G., Miskys, C.R., Garrido, J.A., Hermann, M., Eickhoff, M., Stutzmann, M.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3142687097&partnerID=MN8TOARS
DOI: 10.1063/1.1759088
EID: 2-s2.0-3142687097
Hydrogenated diamond surfaces studied by atomic and Kelvin force microscopy
Rezek, B., Nebel, C.E., Stutzmann, M.
2004
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2442417815&partnerID=MN8TOARS
DOI: 10.1016/j.diamond.2003.11.051
EID: 2-s2.0-2442417815
Hydroxyapatite growth induced by extra cellular matrix deposition on solid surfaces
Pecheva, E., Pramatarova, L., Maitz, M.F., Pham, M.T., Presker, R., Stutzmann, M.
2004
journal article
European Cells and Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84860602319&partnerID=MN8TOARS
EID: 2-s2.0-84860602319
Influence of crystal defects on the piezoresistive properties of 3C-SiC
Eickhoff, M., Stutzmann, M.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4944255215&partnerID=MN8TOARS
DOI: 10.1063/1.1775043
EID: 2-s2.0-4944255215
Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition
Eickhoff, M., Möller, H., Stoemenos, J., Zappe, S., Kroetz, G., Stutzmann, M.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3142703011&partnerID=MN8TOARS
DOI: 10.1063/1.1728311
EID: 2-s2.0-3142703011
Journal of Non-Crystalline Solids: Forward
Chambouleyron, I., Alvarez, F., Stutzmann, M., Taylor, P.C., Marques, F.C.
2004
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942529077&partnerID=MN8TOARS
DOI: 10.1016/j.jnoncrysol.2004.05.001
EID: 2-s2.0-2942529077
Light-induced modification of a-SiOx:H. I: Metastability
Janotta, A., Dikce, Y., Linder, S., Schmidt, M., Janssen, R., Stutzmann, M.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2342509550&partnerID=MN8TOARS
DOI: 10.1063/1.1667007
EID: 2-s2.0-2342509550
Light-induced modification of a-SiOx II: Laser crystallization
Janotta, A., Dikce, Y., Schmidt, M., Eisele, C., Stutzmann, M., Luysberg, M., Houben, L.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2342467516&partnerID=MN8TOARS
DOI: 10.1063/1.1667008
EID: 2-s2.0-2342467516
Optical and structural characteristics of virtually unstrained bulk-like GaN
Gogova, D., Kasic, A., Larsson, H., Pécz, B., Yakimova, R., Magnusson, B., Monemar, B., Tuomisto, F., Saarinen, K., Miskys, C., Stutzmann, M., Bundesmann, C., Schubert, M.
2004
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3042828257&partnerID=MN8TOARS
EID: 2-s2.0-3042828257
Paramagnetic defects of silicon nanowires
Baumer, A., Stutzmann, M., Brandt, M.S., Au, F.C.K., Lee, S.T.
2004
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4344672595&partnerID=MN8TOARS
DOI: 10.1063/1.1775288
EID: 2-s2.0-4344672595
Passivation of Mn acceptors in GaMnAs
Brandt, M.S., Goennenwein, S.T.B., Wassner, T.A., Kohl, F., Lehner, A., Huebl, H., Graf, T., Stutzmann, M., Koeder, A., Schoch, W., Waag, A.
2004
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-11144358019&partnerID=MN8TOARS
DOI: 10.1063/1.1690470
EID: 2-s2.0-11144358019
Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures
Buchheim, C., Winzer, A.T., Goldhahn, R., Gobsch, G., Ambacher, O., Link, A., Eickhoff, M., Stutzmann, M.
2004
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1142303860&partnerID=MN8TOARS
DOI: 10.1016/j.tsf.2003.10.062
EID: 2-s2.0-1142303860
Physica Status Solidi (A) Applied Research: Editorial
Stutzmann, M.
2004
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2442486848&partnerID=MN8TOARS
DOI: 10.1002/pssa.200490006
EID: 2-s2.0-2442486848
Physica Status Solidi (A) Applied Research: Editorial Note
Stutzmann, M., Hildebrandt, S.
2004
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1642395310&partnerID=MN8TOARS
EID: 2-s2.0-1642395310
Physica Status Solidi (A) Applied Research: Editorial Note
Stutzmann, M., Hildebrandt, S.
2004
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1642323932&partnerID=MN8TOARS
EID: 2-s2.0-1642323932
Physica Status Solidi (A) Applied Research: Editorial Note
Stutzmann, M., Hildebrandt, S.
2004
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1642289582&partnerID=MN8TOARS
EID: 2-s2.0-1642289582
Physica Status Solidi (B) Basic Research: Editorial
Stutzmann, M.
2004
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1642559511&partnerID=MN8TOARS
DOI: 10.1002/pssb.200490001
EID: 2-s2.0-1642559511
Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC
Eickhoff, M., Möller, M., Kroetz, G., Stutzmann, M.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4944235378&partnerID=MN8TOARS
DOI: 10.1063/1.1775052
EID: 2-s2.0-4944235378
Protein-modified nanocrystalline diamond thin films for biosensor applications
Härtl, A., Schmich, E., Garrido, J.A., Hernando, J., Catharino, S.C.R., Walter, S., Feulner, P., Kromka, A., Steinmüller, D., Stutzmann, M.
2004
journal article
Nature Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5444223149&partnerID=MN8TOARS
DOI: 10.1038/nmat1204
EID: 2-s2.0-5444223149
Spin-dependent transport in elemental and compound semiconductors and nanostructures
Brandt, M.S., Goennenwein, S.T.B., Graf, T., Huebl, H., Lauterbach, S., Stutzmann, M.
2004
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3242725912&partnerID=MN8TOARS
DOI: 10.1002/pssc.200404763
EID: 2-s2.0-3242725912
Structural and interface properties of an AlN diamond ultraviolet light emitting diode
Miskys, C.R., Garrido, J.A., Hermann, M., Eickhoff, M., Nebel, C.E., Stutzmann, M., Vogg, G.
2004
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-9744254490&partnerID=MN8TOARS
DOI: 10.1063/1.1811382
EID: 2-s2.0-9744254490
Study of pinholes and nanotubes in AllnGaN films by cathodoluminescence and atomic force microscopy
Herrera, M., Cremades, A., Piqueras, J., Stutzmann, M., Ambacher, O.
2004
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942578061&partnerID=MN8TOARS
DOI: 10.1063/1.1690454
EID: 2-s2.0-2942578061
Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures
Martínez-Criado, G., Miskys, C., Karrer, U., Ambacher, O., Stutzmann, M.
2004
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4344684889&partnerID=MN8TOARS
EID: 2-s2.0-4344684889
Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes
Hermann, M., Monroy, E., Helman, A., Baur, B., Albrecht, M., Daudin, B., Ambacher, O., Stutzmann, M., Eickhoff, M.
2004
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3242717694&partnerID=MN8TOARS
DOI: 10.1002/pssc.200404771
EID: 2-s2.0-3242717694
AlN/diamond heterojunction diodes
Miskys, C.R., Garrido, J.A., Nebel, C.E., Hermann, M., Ambacher, O., Eickhoff, M., Stutzmann, M.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037434203&partnerID=MN8TOARS
DOI: 10.1063/1.1532545
EID: 2-s2.0-0037434203
AlN/Diamond np-junctions
Nebel, C.E., Miskys, C.R., Garrido, J.A., Hermann, M., Ambacher, O., Eickhoff, M., Stutzmann, M.
2003
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0348011388&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(03)00313-3
EID: 2-s2.0-0348011388
AlxGa1-xN - A New Material System for Biosensors
Steinhoff, G., Purrucker, O., Tanaka, M., Stutzmann, M., Eickhoff, M.
2003
journal article
Advanced Functional Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0344014105&partnerID=MN8TOARS
DOI: 10.1002/adfm.200304397
EID: 2-s2.0-0344014105
Charge transfer at the Mn acceptor level in GaN
Graf, T., Gjukic, M., Görgens, L., Ambacher, O., Brandt, M.S., Stutzmann, M.
2003
journal article
Journal of Superconductivity and Novel Magnetism
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3543118441&partnerID=MN8TOARS
EID: 2-s2.0-3543118441
Chemical sensing with GaN based devices
Eickhoff, M., Steinhoff, G., Weidemaim, O., Hermann, M., Baur, B., Müller, G., Stutzmann, M.
2003
conference paper
Proceedings - Electrochemical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5744221758&partnerID=MN8TOARS
EID: 2-s2.0-5744221758
DX behaviour of Si donors in AlGaN alloys
Brandt, M.S., Zeisel, R., Gönnenwein, S.T.B., Bayerl, M.W., Stutzmann, M.
2003
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037277390&partnerID=MN8TOARS
DOI: 10.1002/pssb.200301521
EID: 2-s2.0-0037277390
DX behaviour of Si donors in ALGaN alloys
Brandt, M.S., Zeisel, R., Gönnenwein, S.T.B., Bayerl, M.W., Stutzmann, M.
2003
conference paper
Physica Status Solidi Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1342283807&partnerID=MN8TOARS
EID: 2-s2.0-1342283807
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures: Part A: Polarization and pyroelectronics
Ambacher, O., Eickhoff, M., Link, A., Hermann, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Smorchkova, Y., Speck, J., Mishra, U., Schaff, W., Tilak, V., Eastman, L.F.
2003
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4744362148&partnerID=MN8TOARS
DOI: 10.1002/pssc.200303138
EID: 2-s2.0-4744362148
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures: Part B: Sensor applications
Eickhoff, M., Schalwig, J., Steinhoff, G., Weidemann, O., Görgens, L., Neuberger, R., Hermann, M., Baur, B., Müller, G., Ambacher, O., Stutzmann, M.
2003
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4744348261&partnerID=MN8TOARS
DOI: 10.1002/pssc.200303139
EID: 2-s2.0-4744348261
Erratum: Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films (Physical Review B (2003) 67 (165215))
Graf, T., Gjukic, M., Hermann, M., Brandt, M.S., Stutzmann, M., Ambacher, O.
2003
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038502192&partnerID=MN8TOARS
EID: 2-s2.0-0038502192
Fabrication of in-plane gate transistors on hydrogenated diamond surfaces
Garrido, J.A., Nebel, C.E., Todt, R., Rösel, G., Amann, M.-C., Stutzmann, M., Snidero, E., Bergonzo, P.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037428818&partnerID=MN8TOARS
DOI: 10.1063/1.1545152
EID: 2-s2.0-0037428818
Fermi level on hydrogen terminated diamond surfaces
Rezek, B., Sauerer, C., Nebel, C.E., Stutzmann, M., Ristein, J., Ley, L., Snidero, E., Bergonzo, P.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037425305&partnerID=MN8TOARS
DOI: 10.1063/1.1564293
EID: 2-s2.0-0037425305
Ferromagnetic resonance in Ga1-xMnxAs
Goennenwein, S.T.B., Graf, T., Wassner, T., Brandt, M.S., Stutzmann, M., Koeder, A., Frank, S., Schoch, W., Waag, A.
2003
journal article
Journal of Superconductivity and Novel Magnetism
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3543091554&partnerID=MN8TOARS
EID: 2-s2.0-3543091554
Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
Martinez-Criado, G., Kuball, M., Benyoucef, M., Sarua, A., Frayssinet, E., Beaumont, B., Gibart, P., Miskys, C.R., Stutzmann, M.
2003
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037525237&partnerID=MN8TOARS
DOI: 10.1016/S0022-0248(03)01293-4
EID: 2-s2.0-0037525237
Freestanding GaN-substrates and devices
Miskys, C.R., Kelly, M.K., Ambacher, O., Stutzmann, M.
2003
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4744354501&partnerID=MN8TOARS
DOI: 10.1002/pssc.200303140
EID: 2-s2.0-4744354501
Free-standing HVPE-GaN layers
Larsson, H., Gogova, D., Kasic, A., Yakimova, R., Monemar, B., Miskys, C.R., Stutzmann, M.
2003
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84875097111&partnerID=MN8TOARS
DOI: 10.1002/pssc.200303333
EID: 2-s2.0-84875097111
Growth and characterization of GaN:Mn epitaxial films
Graf, T., Gjukic, M., Hermann, M., Brandt, M.S., Stutzmann, M., Görgens, L., Philipp, J.B., Ambacher, O.
2003
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038803831&partnerID=MN8TOARS
DOI: 10.1063/1.1577811
EID: 2-s2.0-0038803831
Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study
Lehner, A., Steinhoff, G., Brandt, M.S., Eickhoff, M., Stutzmann, M.
2003
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0041923642&partnerID=MN8TOARS
DOI: 10.1063/1.1593223
EID: 2-s2.0-0041923642
Hydrosilylation of Silicon Surfaces: Crystalline versus Amorphous
Lehner, A., Steinhoff, G., Brandt, M.S., Eickhoff, M., Stutzmann, M.
2003
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1642581711&partnerID=MN8TOARS
EID: 2-s2.0-1642581711
Hyperfine interactions at dangling bonds in amorphous germanium
Graf, T., Ishikawa, T., Itoh, K.M., Haller, E.E., Stutzmann, M., Brandt, M.S.
2003
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0347415741&partnerID=MN8TOARS
EID: 2-s2.0-0347415741
Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes
Weidemann, O., Hermann, M., Steinhoff, G., Wingbrant, H., Lloyd Spetz, A., Stutzmann, M., Eickhoff, M.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0041430992&partnerID=MN8TOARS
DOI: 10.1063/1.1593794
EID: 2-s2.0-0041430992
Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells
Klein, S., Finger, F., Carius, R., Dylla, T., Rech, B., Grimm, M., Houben, L., Stutzmann, M.
2003
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037850818&partnerID=MN8TOARS
DOI: 10.1016/S0040-6090(03)00111-1
EID: 2-s2.0-0037850818
Kinetics of the topotactic formation of siloxene
Vogg, G., Brandt, M.S., Stutzmann, M.
2003
journal article
Chemistry of Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037465423&partnerID=MN8TOARS
DOI: 10.1021/cm020939e
EID: 2-s2.0-0037465423
Laser-crystallized microcrystalline SiGe alloys for thin film solar cells
Eisele, C., Berger, M., Nerding, M., Strunk, H.P., Nebel, C.E., Stutzmann, M.
2003
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416760&partnerID=MN8TOARS
DOI: 10.1016/S0040-6090(02)01216-6
EID: 2-s2.0-0037416760
Novel in-plane gate devices on hydrogenated diamond surfaces
Garrido, J.A., Nebel, C.E., Todt, R., Amann, M.-C., Williams, O.A., Jackman, R., Nesládek, M., Stutzmann, M.
2003
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0141956175&partnerID=MN8TOARS
DOI: 10.1002/pssa.200303823
EID: 2-s2.0-0141956175
Optical properties of Mn-doped GaN
Gelhausen, O., Malguth, E., Phillips, M.R., Goldys, E.M., Strassburg, M., Hoffmann, A., Graf, T., Gjukic, M., Stutzmann, M.
2003
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942739071&partnerID=MN8TOARS
EID: 2-s2.0-2942739071
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
Cros, A., Joshi, N.V., Smith, T., Cantarero, A., Martínez-Criado, G., Ambacher, O., Stutzmann, M.
2003
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33845422336&partnerID=MN8TOARS
DOI: 10.1002/pssc.200303533
EID: 2-s2.0-33845422336
Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces
Lehner, A., Kohl, F., Franzke, S.A., Graf, T., Brandt, M.S., Stutzmann, M.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037468075&partnerID=MN8TOARS
DOI: 10.1063/1.1540732
EID: 2-s2.0-0037468075
Photoluminescence of Er3+-implanted amorphous hydrogenated silicon suboxides
Janotta, A., Schmidt, M., Janssen, R., Stutzmann, M., Buchal, C.
2003
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-2342602962&partnerID=MN8TOARS
EID: 2-s2.0-2342602962
Photoreflectance studies of N- and Ga-face AlGaN/GaN heterostructures confining a polarisation induced 2DEG
Winzer, A.T., Goldhahn, R., Buchheim, C., Ambacher, O., Link, A., Stutzmann, M., Smorchkova, Y., Mishra, U.K., Speck, J.S.
2003
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0344495476&partnerID=MN8TOARS
DOI: 10.1002/pssb.200303351
EID: 2-s2.0-0344495476
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
Steinhoff, G., Hermann, M., Schaff, W.J., Eastman, L.F., Stutzmann, M., Eickhoff, M.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0042341497&partnerID=MN8TOARS
DOI: 10.1063/1.1589188
EID: 2-s2.0-0042341497
Scientific misconduct: Past, present, and future...
Stutzmann, M., Hildebrandt, S.
2003
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037280368&partnerID=MN8TOARS
DOI: 10.1002/pssb.200301548
EID: 2-s2.0-0037280368
Scribing into hydrogenated diamond surfaces using atomic force microscopy
Rezek, B., Sauerer, C., Garrido, J.A., Nebel, C.E., Stutzmann, M., Snidero, E., Bergonzo, P.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038656736&partnerID=MN8TOARS
DOI: 10.1063/1.1576507
EID: 2-s2.0-0038656736
Self-assembled Si/Ge quantum dot structures for novel device applications
Brunner, K., Bougeard, D., Janotta, A., Herbst, M., Tan, P.H., Riedl, H., Stutzmann, M., Abstreiter, G.
2003
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038488118&partnerID=MN8TOARS
EID: 2-s2.0-0038488118
Spin resonance investigations of Mn2+ in wurtzite GaN and AIN films
Graf, T., Gjukic, M., Hermann, M., Brandt, M.S., Stutzmann, M., Ambacher, O.
2003
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037532875&partnerID=MN8TOARS
EID: 2-s2.0-0037532875
Spin wave resonance in Ga1-xMnxAs
Goennenwein, S.T.B., Graf, T., Wassner, T., Brandt, M.S., Stutzmann, M., Philipp, J.B., Gross, R., Krieger, M., Zürn, K., Ziemann, P., Koeder, A., Frank, S., Schoch, W., Waag, A.
2003
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416015&partnerID=MN8TOARS
DOI: 10.1063/1.1539550
EID: 2-s2.0-0037416015
Study of inversion domain pyramids formed during the GaN:Mg growth
Martínez-Criado, G., Cros, A., Cantarero, A., Joshi, N.V., Ambacher, O., Stutzmann, M.
2003
journal article
Solid-State Electronics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037345314&partnerID=MN8TOARS
DOI: 10.1016/S0038-1101(02)00414-8
EID: 2-s2.0-0037345314
Surface functionalization of amorphous silicon and silicon suboxides for biological applications
Dahmen, C., Janotta, A., Dimova-Malinovska, D., Marx, S., Jeschke, B., Nies, B., Kessler, H., Stutzmann, M.
2003
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416748&partnerID=MN8TOARS
DOI: 10.1016/S0040-6090(02)01228-2
EID: 2-s2.0-0037416748
Two-dimensional Charge Carrier Systems for Chemical Sensors: AlGaN/GaN and Diamond
Stutzmann, M., Garrido, J.A., Eickhoff, M.
2003
conference paper
Proceedings of IEEE Sensors
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1542363305&partnerID=MN8TOARS
EID: 2-s2.0-1542363305
A new acceptor state in CVD-diamond
Garrido, J.A., Nebel, C.E., Stutzmann, M., Gheeraert, E., Casanova, N., Bustarret, E., Deneuville, A.
2002
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036508395&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(01)00539-8
EID: 2-s2.0-0036508395
Capacitance-voltage studies of Al-Schottky contacts on hydrogen-terminated diamond
Garrido, J.A., Nebel, C.E., Stutzmann, M., Snidero, E., Bergonzo, P.
2002
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79956014275&partnerID=MN8TOARS
DOI: 10.1063/1.1496495
EID: 2-s2.0-79956014275
Characterization of sub-micron in-plane devices in H-terminated diamond
Garrido, J.A., Nebel, C.E., Stutzmann, M., Rösel, G., Todt, R., Amann, M.-C., Snidero, E., Bergonzo, P.
2002
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036809680&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200210)193:3<517::AID-PSSA517>3.0.CO;2-H
EID: 2-s2.0-0036809680
Dependence of the doping efficiency on material composition in n-type a-SiOx:H
Janotta, A., Janssen, R., Schmidt, M., Graf, T., Görgens, L., Hammerl, C., Schreiber, S., Dollinger, G., Bergmaier, A., Stritzker, B., Stutzmann, M.
2002
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-6444245856&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(01)00963-2
EID: 2-s2.0-6444245856
Electrical and optical measurements of CVD diamond doped with sulfur
Garrido, J.A., Nebel, C.E., Stutzmann, M., Gheeraert, E., Casanova, N., Bustarret, E.
2002
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037091826&partnerID=MN8TOARS
EID: 2-s2.0-0037091826
Electron spin resonance of phosphorus in n-type diamond
Graf, T., Brandt, M.S., Nebel, C.E., Stutzmann, M., Koizumi, S.
2002
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036809789&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200210)193:3<434::AID-PSSA434>3.0.CO;2-P
EID: 2-s2.0-0036809789
Epitaxial growth of phosphorus doped diamond on {111} substrate
Casanova, N., Tajani, A., Gheeraert, E., Bustarret, E., Garrido, J.A., Nebel, C.E., Stutzmann, M.
2002
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036508106&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(02)00012-2
EID: 2-s2.0-0036508106
Er3+ luminescence in a-SiOx:H
Janotta, A., Schmidt, M., Janssen, R., Buchal, Ch., Stutzmann, M.
2002
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036539894&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(01)00974-7
EID: 2-s2.0-0036539894
Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
Terukov, E.I., Gusev, O.B., Kon'Kov, O.I., Undalov, Yu.K., Stutzmann, M., Janotta, A., Mell, H., Kleider, J.P.
2002
journal article
Semiconductors
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036859853&partnerID=MN8TOARS
DOI: 10.1134/1.1521223
EID: 2-s2.0-0036859853
Five years of rapid research notes in physica status solidi: The fastest refereed forum of publication
Stutzmann, M.
2002
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036565436&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200205)231:1<1::AID-PSSB1>3.0.CO;2-W
EID: 2-s2.0-0036565436
GaN-based heterostructures for sensor applications
Stutzmann, M., Steinhoff, G., Eickhoff, M., Ambacher, O., Nebel, C.E., Schalwig, J., Neuberger, R., Müller, G.
2002
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036508494&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(02)00026-2
EID: 2-s2.0-0036508494
Gas sensitive GaN/AlGaN-heterostructures
Schalwig, J., Müller, G., Eickhoff, M., Ambacher, O., Stutzmann, M.
2002
journal article
Sensors and Actuators, B: Chemical
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037146562&partnerID=MN8TOARS
DOI: 10.1016/S0925-4005(02)00292-7
EID: 2-s2.0-0037146562
Group III-nitride-based gas sensors for combustion monitoring
Schalwig, J., Müller, G., Eickhoff, M., Ambacher, O., Stutzmann, M.
2002
journal article
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037198538&partnerID=MN8TOARS
DOI: 10.1016/S0921-5107(02)00050-8
EID: 2-s2.0-0037198538
Group III-nitride devices for field effect based gas detection
Eickhoff, M., Schalwig, J., Weidemann, O., Görgens, L., Müller, G., Stutzmann, M.
2002
conference paper
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1042289176&partnerID=MN8TOARS
EID: 2-s2.0-1042289176
High efficiency thin film solar cells with intrinsic microcrystalline silicon prepared by hot wire CVD
Klein, S., Finger, F., Carius, R., Rech, B., Houben, L., Luysberg, M., Stutzmann, M.
2002
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036919017&partnerID=MN8TOARS
EID: 2-s2.0-0036919017
Hydrogen response mechanism of Pt-GaN Schottky diodes
Schalwig, J., Müller, G., Karrer, U., Eickhoff, M., Ambacher, O., Stutzmann, M., Görgens, L., Dollinger, G.
2002
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79956017759&partnerID=MN8TOARS
DOI: 10.1063/1.1450044
EID: 2-s2.0-79956017759
Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization
Rezek, B., Nebel, C.E., Stutzmann, M.
2002
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036536863&partnerID=MN8TOARS
DOI: 10.1063/1.1458058
EID: 2-s2.0-0036536863
Local oxidation of hydrogenated diamond surfaces for device fabrication
Rezek, B., Garrido, J.A., Stutzmann, M., Nebel, C.E., Snidero, E., Bergonzo, P.
2002
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036809091&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200210)193:3<523::AID-PSSA523>3.0.CO;2-T
EID: 2-s2.0-0036809091
Low temperature properties of the p-type surface conductivity of diamond
Nebel, C.E., Ertl, F., Sauerer, C., Stutzmann, M., Graeff, C.F.O., Bergonzo, P., Williams, O.A., Jackman, R.B.
2002
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036508518&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(01)00586-6
EID: 2-s2.0-0036508518
Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications
Klein, S., Wolff, J., Finger, F., Carius, R., Wagner, H., Stutzmann, M.
2002
journal article
Japanese Journal of Applied Physics, Part 2: Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037082078&partnerID=MN8TOARS
EID: 2-s2.0-0037082078
Novel sensor applications of group-III nitrides
Eickhoff, M., Ambacher, O., Steinhoff, G., Schalwig, J., Neuberger, R., Palacios, T., Monroy, E., Calle, F., Müller, G., Stutzmann, M.
2002
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036374029&partnerID=MN8TOARS
EID: 2-s2.0-0036374029
n-Type doping of diamond by sulfur and phosphorus
Gheeraert, E., Casanova, N., Tajani, A., Deneuville, A., Bustarret, E., Garrido, J.A., Nebel, C.E., Stutzmann, M.
2002
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036508525&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(01)00683-5
EID: 2-s2.0-0036508525
Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)
Neuberger, R., Müller, G., Eickhoff, M., Ambacher, O., Stutzmann, M.
2002
journal article
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037198506&partnerID=MN8TOARS
DOI: 10.1016/S0921-5107(02)00053-3
EID: 2-s2.0-0037198506
Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG
Goldhahn, R., Buchheim, C., Shokhovets, S., Gobsch, G., Ambacher, O., Link, A., Hermann, M., Stutzmann, M., Smorchkova, Y., Mishra, U.K., Speck, J.S.
2002
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036929942&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O
EID: 2-s2.0-0036929942
Physica Status Solidi (B) Basic Research: Preface
Brandt, M.S., Fanciulli, M., Stutzmann, M.
2002
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036798231&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200210)233:3<375::AID-PSSB375>3.0.CO;2-B
EID: 2-s2.0-0036798231
Properties of grain boundaries in laser-crystallized silicon thin films
Eisele, C., Bach, T., Nebel, C.E., Stutzmann, M.
2002
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036531794&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(01)00978-4
EID: 2-s2.0-0036531794
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V, Tilak, V., Schaff, B., Eastman, L.F.
2002
journal article
Journal of Physics Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037041115&partnerID=MN8TOARS
DOI: 10.1088/0953-8984/14/13/302
EID: 2-s2.0-0037041115
Role of defect centers in recombination processes in GaN monocrystals
Joshi, N.V., Cros, A., Cantarero, A., Medina, H., Ambacher, O., Stutzmann, M.
2002
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-79955987860&partnerID=MN8TOARS
DOI: 10.1063/1.1471938
EID: 2-s2.0-79955987860
The Mn3+/2+ acceptor level in group III nitrides
Graf, T., Gjukic, M., Brandt, M.S., Stutzmann, M., Ambacher, O.
2002
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0042712263&partnerID=MN8TOARS
DOI: 10.1063/1.1530374
EID: 2-s2.0-0042712263
Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands
Link, A., Graf, T., Ambacher, O., Jimenez, A., Calleja, E., Smorchkova, Y., Speck, J., Mishra, U., Stutzmann, M.
2002
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0036928772&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200212)234:3<805::AID-PSSB805>3.0.CO;2-G
EID: 2-s2.0-0036928772
Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction
Martinez-Criado, G., Cros, A., Cantarero, A., Karrer, U., Ambacher, O., Miskys, C.R., Stutzmann, M.
2002
conference paper
Physica Status Solidi C: Conferences
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-23844547321&partnerID=MN8TOARS
DOI: 10.1002/pssc.200390070
EID: 2-s2.0-23844547321
Defect-related noise in AlN and AlGaN alloys
Goennenwein, S.T.B., Zeisel, R., Baldovino, S., Ambacher, O., Brandt, M.S., Stutzmann, M.
2001
journal article
Physica B: Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035670659&partnerID=MN8TOARS
DOI: 10.1016/S0921-4526(01)00655-X
EID: 2-s2.0-0035670659
Efficient tunable luminescence of SiGe alloy sheet polymers
Vogg, G., Meyer, A.J.-P., Miesner, C., Brandt, M.S., Stutzmann, M.
2001
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0040753031&partnerID=MN8TOARS
DOI: 10.1063/1.1378315
EID: 2-s2.0-0040753031
Elastic Properties of the Layered Zintl-Phase CaSi2
Voog, G., Brandt, M.S., Stutzmann, M.
2001
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1842636862&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200106)185:2<213::AID-PSSA213>3.0.CO;2-8
EID: 2-s2.0-1842636862
Electrically detected magnetic resonance studies of phosphorus doped diamond
Graf, T., Brandt, M.S., Nebel, C.E., Stutzmann, M., Koizumi, S.
2001
journal article
Physica B: Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035675150&partnerID=MN8TOARS
DOI: 10.1016/S0921-4526(01)00748-7
EID: 2-s2.0-0035675150
Electron affinity of AlxGa1-xN(0001) surfaces
Grabowski, S.P., Schneider, M., Nienhaus, H., Mönch, W., Dimitrov, R., Ambacher, O., Stutzmann, M.
2001
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035938335&partnerID=MN8TOARS
DOI: 10.1063/1.1367275
EID: 2-s2.0-0035938335
Epitaxial alloy films of Zintl-phase Ca(Si1-xGex)2
Vogg, G., Miesner, C., Brandt, M.S., Stutzmann, M., Abstreiter, G.
2001
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035276199&partnerID=MN8TOARS
DOI: 10.1016/S0022-0248(01)00686-8
EID: 2-s2.0-0035276199
Excitonic transitions in homoepitaxial GaN
Martínez-Criado, G., Miskys, C.R., Cros, A., Cantarero, A., Ambacher, O., Stutzmann, M.
2001
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035620302&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200111)228:2<497::AID-PSSB497>3.0.CO;2-R
EID: 2-s2.0-0035620302
Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures
Link, A., Ambacher, O., Smorchkova, I.P., Mishra, U.K., Speck, J.S., Stutzmann, M.
2001
conference paper
Materials Science Forum
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035126745&partnerID=MN8TOARS
EID: 2-s2.0-0035126745
Generation-recombination noise of DX centers in AlN:Si
Goennenwein, S.T.B., Zeisel, R., Ambacher, O., Brandt, M.S., Stutzmann, M., Baldovino, S.
2001
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0040330135&partnerID=MN8TOARS
DOI: 10.1063/1.1405426
EID: 2-s2.0-0040330135
Group-III-Nitride Based Gas Sensing Devices
Schalwig, J., Müller, G., Ambacher, O., Stutzmann, M.
2001
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0002324218&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200105)185:1<39::AID-PSSA39>3.0.CO;2-G
EID: 2-s2.0-0002324218
Growth of quaternary AlInGaN/GaN heterostructures by plasma induced molecular beam epitaxy with high In concentration
Lima, A.P., Miskys, C.R., Görgens, L., Ambacher, O., Wenzel, A., Rauschenbach, B., Stutzmann, M.
2001
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035557650&partnerID=MN8TOARS
EID: 2-s2.0-0035557650
g values of effective mass donors in AlxGa1-xN alloys
Bayerl, M.W., Brandt, M.S., Graf, T., Ambacher, O., Majewski, J.A., Stutzmann, M., As, D.J., Lischka, K.
2001
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001250730&partnerID=MN8TOARS
EID: 2-s2.0-0001250730
High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications
Neuberger, R., Müller, G., Ambacher, O., Stutzmann, M.
2001
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18044402181&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200105)185:1<85::AID-PSSA85>3.0.CO;2-U
EID: 2-s2.0-18044402181
Hydrogen-induced transport properties of holes in diamond surface layers
Nebel, C.E., Sauerer, C., Ertl, F., Stutzmann, M., Graeff, C.F.O., Bergonzo, P., Williams, O.A., Jackman, R.
2001
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035981041&partnerID=MN8TOARS
DOI: 10.1063/1.1429756
EID: 2-s2.0-0035981041
Inhomogeneous incorporation of in and Al in molecular beam epitaxial AlInGaN films
Cremades, A., Navarro, V., Piqueras, J., Lima, A.P., Ambacher, O., Stutzmann, M.
2001
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035502964&partnerID=MN8TOARS
DOI: 10.1063/1.1407849
EID: 2-s2.0-0035502964
Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications
Klein, S., Finger, F., Carius, R., Wagner, H., Stutzmann, M.
2001
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035801178&partnerID=MN8TOARS
DOI: 10.1016/S0040-6090(01)01280-9
EID: 2-s2.0-0035801178
Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors
Neuberger, R., Müller, G., Ambacher, O., Stutzmann, M.
2001
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17344384455&partnerID=MN8TOARS
EID: 2-s2.0-17344384455
Ionization energy and electron affinity of clean and oxidized Al xGa1-xN(0001) surfaces
Nienhaus, H., Schneider, M., Grabowski, S.P., Mönch, W., Dimitrov, R., Ambacher, O., Stutzmann, M.
2001
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-34249904120&partnerID=MN8TOARS
EID: 2-s2.0-34249904120
Laser crystallisation of silicon-germanium alloys
Eisele, C., Nebel, C.E., Stutzmann, M.
2001
book
Solid State Phenomena
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034820889&partnerID=MN8TOARS
EID: 2-s2.0-0034820889
Long living excited states in boron doped diamond
Nebel, C.E., Rohrer, E., Stutzmann, M.
2001
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0012536268&partnerID=MN8TOARS
DOI: 10.1063/1.1342017
EID: 2-s2.0-0012536268
Low Temperature Surface Conductivity of Hydrogenated Diamond
Sauerer, C., Ertl, F., Nebel, C.E., Stutzmann, M., Bergonzo, P., Williams, O.A., Jackman, R.A.
2001
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1842690812&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200108)186:2<241::AID-PSSA241>3.0.CO;2-1
EID: 2-s2.0-1842690812
Materials Research Society Symposium - Proceedings: Preface
Stutzmann, M., Boyce, J.B., David Cohen, J., Collins, R.W., Hanna, J.-I.
2001
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035556448&partnerID=MN8TOARS
EID: 2-s2.0-0035556448
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN
Bayerl, M.W., Brandt, M.S., Ambacher, O., Stutzmann, M., Glaser, E.R., Henry, R.L., Wickenden, A.E., Koleske, D.D., Suski, T., Grzegory, I., Porowski, S.
2001
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034904826&partnerID=MN8TOARS
EID: 2-s2.0-0034904826
Periodic light coupler gratings in amorphous thin film solar cells
Eisele, C., Nebel, C.E., Stutzmann, M.
2001
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035875208&partnerID=MN8TOARS
DOI: 10.1063/1.1370996
EID: 2-s2.0-0035875208
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
Martínez-Criado, G., Cros, A., Cantarero, A., Miskys, C.R., Ambacher, O., Dimitrov, R., Stutzmann, M.
2001
journal article
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035933108&partnerID=MN8TOARS
DOI: 10.1016/S0921-5107(00)00701-7
EID: 2-s2.0-0035933108
Photoluminescence study of excitons in homoepitaxial GaN
Martínez-Criado, G., Miskys, C.R., Cros, A., Ambacher, O., Cantarero, A., Stutzmann, M.
2001
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035576362&partnerID=MN8TOARS
DOI: 10.1063/1.1413713
EID: 2-s2.0-0035576362
Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures
Eickhoff, M., Ambacher, O., Krötz, G., Stutzmann, M.
2001
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035476353&partnerID=MN8TOARS
DOI: 10.1063/1.1398602
EID: 2-s2.0-0035476353
Playing with polarity
Stutzmann, M., Ambacher, O., Eickhoff, M., Karrer, U., Pimenta, A.L., Neuberger, R., Schalwig, J., Dimitrov, R., Schuck, P.J., Grober, R.D.
2001
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18044373949&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U
EID: 2-s2.0-18044373949
Polygermanosilyne calcium hydroxide intercalation compounds formed by topotactic transformation of Ca(Si1-xGex)2 alloy Zintl phases in ambient atmosphere
Vogg, G., Meyer, L.J.-P., Miesner, C., Brandt, M.S., Stutzmann, M.
2001
journal article
Monatshefte fur Chemie
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-67049137159&partnerID=MN8TOARS
DOI: 10.1007/s007060170028
EID: 2-s2.0-67049137159
Polygermyne: Germanium sheet polymers with efficient near-infrared luminescence
Vogg, G., Brandt, M.S., Meyer, L.J.-P., Stutzmann, M., Hajnal, Z., Szücs, B., Frauenheim, T.
2001
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035744582&partnerID=MN8TOARS
EID: 2-s2.0-0035744582
Pt Schottky contacts on Ga- And N-face surfaces of free-standing GaN
Karrer, U., Miskys, C.R., Ambacher, O., Stutzmann, M.
2001
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-34249914499&partnerID=MN8TOARS
EID: 2-s2.0-34249914499
Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures
Martínez-Criado, G., Cros, A., Cantarero, A., Ambacher, O., Miskys, C.R., Dimitrov, R., Stutzmann, M., Smart, J., Shealy, J.R.
2001
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035502935&partnerID=MN8TOARS
DOI: 10.1063/1.1408268
EID: 2-s2.0-0035502935
Space charge spectroscopy of diamond
Nebel, C.E., Zeisel, R., Stutzmann, M.
2001
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035270534&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(00)00489-1
EID: 2-s2.0-0035270534
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
Schuck, P.J., Mason, M.D., Grober, R.D., Ambacher, O., Lima, A.P., Miskys, C., Dimitrov, R., Stutzmann, M.
2001
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035855008&partnerID=MN8TOARS
DOI: 10.1063/1.1390486
EID: 2-s2.0-0035855008
Spin-dependent electronic noise
Brandt, M.S., Goennenwein, S.T.B., Stutzmann, M.
2001
journal article
Physica E: Low-Dimensional Systems and Nanostructures
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035335118&partnerID=MN8TOARS
DOI: 10.1016/S1386-9477(01)00055-8
EID: 2-s2.0-0035335118
Study of structural defects limiting the luminescence of InGaN single quantum wells
Cremades, A., Piqueras, J., Albrecht, M., Stutzmann, M., Strunk, H.P.
2001
journal article
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035932206&partnerID=MN8TOARS
DOI: 10.1016/S0921-5107(00)00648-6
EID: 2-s2.0-0035932206
Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures
Link, A., Graf, T., Dimitrov, R., Ambacher, O., Stutzmann, M., Smorchkova, Y., Mishra, U., Speck, J.
2001
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035540237&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200111)228:2<603::AID-PSSB603>3.0.CO;2-Y
EID: 2-s2.0-0035540237
Wetting behaviour of GaN surfaces with Ga- or N-face polarity
Eickhoff, M., Neuberger, R., Steinhoff, G., Ambacher, O., Müller, G., Stutzmann, M.
2001
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035632830&partnerID=MN8TOARS
DOI: 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO;2-A
EID: 2-s2.0-0035632830
2DEGs and 2DHGs induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures
Ambacher, O., Link, A., Hackenbuchner, S., Stutzmann, M., Dimitrov, R., Murphy, M., Smart, J., Shealy, J.R., Green, B., Schaff, W.J., Eastman, L.F.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18244427588&partnerID=MN8TOARS
EID: 2-s2.0-18244427588
AlGaN-based ultraviolet light detectors with integrated optical filters
Karrer, Uwe, Dobner, Armin, Ambacher, Oliver, Stutzmann, Martin
2000
journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034155771&partnerID=MN8TOARS
DOI: 10.1116/1.591272
EID: 2-s2.0-0034155771
Capacitance-voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes
Zeisel, R., Nebel, C.E., Stutzmann, M.
2000
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033748134&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(99)00260-5
EID: 2-s2.0-0033748134
Characterization of InGaN thin films using high-resolution x-ray diffraction
Görgens, L., Ambacher, O., Stutzmann, M., Miskys, C., Scholz, F., Off, J.
2000
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038551879&partnerID=MN8TOARS
EID: 2-s2.0-0038551879
Defects in planar Si pn junctions studied with electrically detected magnetic resonance
Wimbauer, T., Ito, K., Mochizuki, Y., Horikawa, M., Kitano, T., Brandt, M.S., Stutzmann, M.
2000
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001107649&partnerID=MN8TOARS
EID: 2-s2.0-0001107649
DX-behavior of Si in AlN
Zeisel, R., Bayerl, M.W., Goennenwein, S.T.B., Dimitrov, R., Ambacher, O., Brandt, M.S., Stutzmann, M.
2000
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000696420&partnerID=MN8TOARS
EID: 2-s2.0-0000696420
Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films
Cremades, A., Albrecht, M., Krinke, J., Dimitrov, R., Stutzmann, M., Strunk, H.P.
2000
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000920622&partnerID=MN8TOARS
EID: 2-s2.0-0000920622
Epitaxial CaGe2 films on germanium
Vogg, G., Brandt, M.S., Stutzmann, M., Genchev, I., Bergmaier, A., Görgens, L., Dollinger, G.
2000
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033746102&partnerID=MN8TOARS
DOI: 10.1016/S0022-0248(00)00032-4
EID: 2-s2.0-0033746102
Fermi level pinning at gan-interfaces: Correlation of electrical admittance and transient spectroscopy
Witte, H., Krtschil, A., Lisker, M., Rudloff, D., Christen, J., Krost, A., Stutzmann, M., Scholz, F.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-33751306977&partnerID=MN8TOARS
EID: 2-s2.0-33751306977
Fermi level pinning at GaN-interfaces: correlation of electrical admittance and transient spectroscopy
Witte, H., Krtschil, A., Lisker, M., Rudloff, D., Christen, J., Krost, A., Stutzmann, M., Scholz, F.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033722346&partnerID=MN8TOARS
EID: 2-s2.0-0033722346
Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy
Witte, H., Krtschil, A., Lisker, M., Rudloff, D., Christen, J., Krost, A., Stutzmann, M., Scholz, F.
2000
journal article
MRS Internet Journal of Nitride Semiconductor Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3242790174&partnerID=MN8TOARS
EID: 2-s2.0-3242790174
GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates
Miskys, C.R., Kelly, M.K., Ambacher, O., Martínez-Criado, G., Stutzmann, M.
2000
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001668747&partnerID=MN8TOARS
EID: 2-s2.0-0001668747
Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy
Lima, A.P., Miskys, C.R., Karrer, U., Ambacher, O., Wenzel, A., Rauschenbach, B., Stutzmann, M.
2000
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034514376&partnerID=MN8TOARS
DOI: 10.1016/S0022-0248(00)00887-3
EID: 2-s2.0-0034514376
Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
Karrer, U., Ambacher, O., Stutzmann, M.
2000
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000948557&partnerID=MN8TOARS
EID: 2-s2.0-0000948557
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
Dimitrov, R., Tilak, V., Yeo, W., Green, B., Kim, H., Smart, J., Chumbes, E., Shealy, J.R., Schaff, W., Eastman, L.F., Miskys, C., Ambacher, O., Stutzmann, M.
2000
journal article
Solid-State Electronics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033689618&partnerID=MN8TOARS
DOI: 10.1016/S0038-1101(00)00085-X
EID: 2-s2.0-0033689618
Interference laser crystallization of microcrystalline silicon using asymmetric beam intensities
Rezek, B., Nebel, C.E., Stutzmann, M.
2000
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0345848973&partnerID=MN8TOARS
EID: 2-s2.0-0345848973
Laser-induced liftoff and laser patterning of large free-standing GaN substrates
Ambacher, O., Kelly, M.K., Miskys, C.R., Höppel, L., Nebel, C., Stutzmann, M.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034439781&partnerID=MN8TOARS
EID: 2-s2.0-0034439781
Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers
Dimitrov, R., Tilak, V., Murphy, M., Schaff, W.J., Eastman, L.F., Lima, A.P., Miskys, C., Ambacher, O., Stutzmann, M.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034428508&partnerID=MN8TOARS
EID: 2-s2.0-0034428508
Light trapping by periodically structured TCO in the sub-micrometer range
Eisele, C., Nebel, C.E., Stutzmann, M.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034431459&partnerID=MN8TOARS
EID: 2-s2.0-0034431459
Magnetic resonance investigations of defects in Ga14N and Ga15N
Bayerl, M.W., Reinacher, N.M., Angerer, H., Ambacher, O., Brandt, M.S., Stutzmann, M.
2000
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0008875535&partnerID=MN8TOARS
EID: 2-s2.0-0008875535
Materials Research Society Symposium - Proceeding: Preface
Collins, R.W., Branz, H.M., Stutzmann, M., Guha, S., Okamoto, H.
2000
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034429743&partnerID=MN8TOARS
EID: 2-s2.0-0034429743
Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance
Goennenwein, S.T.B., Bayerl, M.W., Brandt, M.S., Stutzmann, M.
2000
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038257300&partnerID=MN8TOARS
EID: 2-s2.0-0038257300
Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon
Goennenwein, S.T.B., Bayerl, M.W., Brandt, M.S., Stutzmann, M.
2000
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001048579&partnerID=MN8TOARS
EID: 2-s2.0-0001048579
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
Martínez-Criado, G., Cros, A., Cantarero, A., Dimitrov, R., Ambacher, O., Stutzmann, M.
2000
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0346346574&partnerID=MN8TOARS
EID: 2-s2.0-0346346574
Persistent photocurrents in CVD diamond
Nebel, C.E., Waltenspiel, A., Stutzmann, M., Paul, M., Schäfer, L.
2000
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033729065&partnerID=MN8TOARS
DOI: 10.1016/S0925-9635(99)00204-6
EID: 2-s2.0-0033729065
Photoconductivity study of Li doped homoepitaxially grown CVD diamond
Zeisel, R., Nebel, C.E., Stutzmann, M., Sternschulte, H., Schreck, M., Stritzker, B.
2000
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034273880&partnerID=MN8TOARS
DOI: 10.1002/1521-396X(200009)181:1<45::AID-PSSA45>3.0.CO;2-2
EID: 2-s2.0-0034273880
Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy
Krtschil, A., Witte, H., Lisker, M., Christen, J., Krost, A., Birkle, U., Einfeldt, S., Hommel, D., Scholz, F., Off, J., Stutzmann, M.
2000
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038583753&partnerID=MN8TOARS
EID: 2-s2.0-0038583753
Polygermyne - a prototype system for layered germanium polymers
Vogg, G., Brandt, M.S., Stutzmann, M.
2000
journal article
Advanced Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0034273011&partnerID=MN8TOARS
DOI: 10.1002/1521-4095(200009)12:17<1278::AID-ADMA1278>3.0.CO;2-Y
EID: 2-s2.0-0034273011
Spatially resolved photocurrent measurements of microstructured a-Si:H solar cells
Eisele, C., Nebel, C.E., Stutzmann, M.
2000
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0006361062&partnerID=MN8TOARS
EID: 2-s2.0-0006361062
Spin-dependent capacitance of silicon field-effect transistors
Brandt, M.S., Neuberger, R.T., Stutzmann, M.
2000
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000716166&partnerID=MN8TOARS
EID: 2-s2.0-0000716166
Spin-dependent processes in amorphous and microcrystalline silicon: A survey
Stutzmann, M., Brandt, M.S., Bayerl, M.W.
2000
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0012201403&partnerID=MN8TOARS
EID: 2-s2.0-0012201403
Structural and optical properties of Si-doped GaN
Cremades, A., Görgens, L., Ambacher, O., Stutzmann, M., Scholz, F.
2000
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001571442&partnerID=MN8TOARS
EID: 2-s2.0-0001571442
Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
Kim, J.W., Son, C.-S., Choi, I.-H., Park, Y.K., Kim, Y.T., Ambacher, O., Stutzmann, M.
2000
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033898694&partnerID=MN8TOARS
DOI: 10.1016/S0022-0248(99)00483-2
EID: 2-s2.0-0033898694
Thermal stability of p-type doped amorphous silicon suboxides
Janssen, R., Janotta, A., Stutzmann, M.
2000
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0347742797&partnerID=MN8TOARS
EID: 2-s2.0-0347742797
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Ambacher, O., Foutz, B., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Sierakowski, A.J., Schaff, W.J., Eastman, L.F., Dimitrov, R., Mitchell, A., Stutzmann, M.
2000
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0142038457&partnerID=MN8TOARS
EID: 2-s2.0-0142038457
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
Dimitrov, R., Murphy, M., Smart, J., Schaff, W., Shealy, J.R., Eastman, L.F., Ambacher, O., Stutzmann, M.
2000
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000370866&partnerID=MN8TOARS
EID: 2-s2.0-0000370866
Analysis of composition fluctuations in AlxGa1-xN
Neubauer, B., Rosenauer, A., Gerthsen, D., Ambacher, O., Stutzmann, M., Albrecht, M., Strunk, H.P.
1999
journal article
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033528911&partnerID=MN8TOARS
DOI: 10.1016/S0921-5107(98)00397-3
EID: 2-s2.0-0033528911
Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells
Brandt, M.S., Neuberger, R.T., Bayerl, M.W., Stutzmann, M.
1999
journal article
Japanese Journal of Applied Physics, Part 2: Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033319029&partnerID=MN8TOARS
EID: 2-s2.0-0033319029
Capacitively detected magnetic resonance of defects in MOSFETs
Brandt, M.S., Neuberger, R., Stutzmann, M.
1999
journal article
Physica B: Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033314741&partnerID=MN8TOARS
DOI: 10.1016/S0921-4526(99)00629-8
EID: 2-s2.0-0033314741
Carrier recombination at screw dislocations in n-type AlGaN layers
Albrecht, M., Cremades, A., Krinke, J., Christiansen, S., Ambacher, O., Piqueras, J., Strunk, H.P., Stutzmann, M.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033229371&partnerID=MN8TOARS
EID: 2-s2.0-0033229371
Characterization of AlGaN-Schottky diodes grown by plasma induced molecular beam epitaxy
Karrer, U., Dobner, A., Ambacher, O., Stutzmann, M.
1999
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033221237&partnerID=MN8TOARS
DOI: 10.1002/(SICI)1521-396X(199911)176:1<163::AID-PSSA163>3.0.CO;2-U
EID: 2-s2.0-0033221237
Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy
Kim, J.W., Son, C.-S., Choi, I.-H., Park, Y.K., Kim, Y.T., Ambacher, O., Stutzmann, M.
1999
journal article
Journal of the Korean Physical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033408919&partnerID=MN8TOARS
EID: 2-s2.0-0033408919
Comparison of N-face and Ga-face AIGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
Dmitrov, R., Mltchell, A., Wlttmer, L., Ambacher, O., Stutzmann, M., Hllsenbeck, J., Rieger, W.
1999
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033327787&partnerID=MN8TOARS
EID: 2-s2.0-0033327787
Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy
Wieser, N., Ambacher, O., Felsl, H.-P., Görgens, L., Stutzmann, M.
1999
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032614049&partnerID=MN8TOARS
EID: 2-s2.0-0032614049
Composition analysis using elastic recoil detection
Görgens, L., Dollinger, G., Bergmaier, A., Ambacher, O., Eastman, L., Smart, J.A., Shealy, J.F., Dimitrov, R., Stutzmann, M., Mitchell, A.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033243019&partnerID=MN8TOARS
EID: 2-s2.0-0033243019
Correlation of photoconductivity and structure of microcrystalline silicon thin films with submicron resolution
Rezek, B., Nebel, C.E., Stutzmann, M.
1999
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0013159023&partnerID=MN8TOARS
EID: 2-s2.0-0013159023
CV and DLTS experiments in boron-doped diamond
Nebel, C.E., Zeisel, R., Stutzmann, M.
1999
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0004659803&partnerID=MN8TOARS
EID: 2-s2.0-0004659803
Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range
Wethkamp, T., Wilmers, K., Cobet, C., Esser, N., Richter, W., Ambacher, O., Stutzmann, M., Cardona, M.
1999
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001674558&partnerID=MN8TOARS
EID: 2-s2.0-0001674558
Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN
Wieser, N., Ambacher, O., Angerer, H., Dimitrov, R., Stutzmann, M., Stritzker, B., Lindner, J.K.N.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033243044&partnerID=MN8TOARS
EID: 2-s2.0-0033243044
Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
Graeff, C.F.O., Brandt, M.S., Stutzmann, M., Holzmann, M., Abstreiter, G., Schäffler, F.
1999
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001254130&partnerID=MN8TOARS
EID: 2-s2.0-0001254130
Extended defects in silicon by MeV B++ implantation in different 8 inches Cz-Si wafers
Pech, R., Huber, D., Brunner, J., Rubin, L., Erokhin, Y., Funk, K., Morris, W., Stutzmann, M.
1999
conference paper
Proceedings of the International Conference on Ion Implantation Technology
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033353827&partnerID=MN8TOARS
EID: 2-s2.0-0033353827
From CaSi2 to siloxene: Epitaxial silicide and sheet polymer films on silicon
Vogg, G.U., Brandt, M.S., Stutzmann, M., Albrecht, M.
1999
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033149092&partnerID=MN8TOARS
DOI: 10.1016/S0022-0248(99)00135-9
EID: 2-s2.0-0033149092
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
Murphy, M.J., Chu, K., Wu, H., Yeo, W., Schaff, W.J., Ambacher, O., Eastman, L.F., Eustis, T.J., Silcox, J., Dimitrov, R., Stutzmann, M.
1999
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000789653&partnerID=MN8TOARS
EID: 2-s2.0-0000789653
Interface effects on the persistent photoconductivity in thin GaN and AIGaN films
Seifert, O.P., Kirfel, O., Munzel, M., Hirsch, M.T., Parisi, J., Kelly, M., Ambacher, O., Stutzmann, M.
1999
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033350915&partnerID=MN8TOARS
EID: 2-s2.0-0033350915
Interface effects on the persistent photoconductivity in thin GaN and AlGaN films
Seifert, O.P., Kirfel, O., Munzel, M., Hirsch, M.T., Parisi, J., Kelly, M., Ambacher, O., Stutzmann, M.
1999
journal article
MRS Internet Journal of Nitride Semiconductor Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3442895120&partnerID=MN8TOARS
EID: 2-s2.0-3442895120
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
Kelly, Michael K., Vaudo, Robert P., Phanse, Vivek M., Goergens, Lutz, Ambacher, Oliver, Stutzmann, Martin
1999
journal article
Japanese Journal of Applied Physics, Part 2: Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032657923&partnerID=MN8TOARS
EID: 2-s2.0-0032657923
MOCVD-epitaxy on free-standing HVPE-GaN substrates
Miskys, C.R., Kelly, M.K., Ambacher, O., Stutzmann, M.
1999
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033221604&partnerID=MN8TOARS
DOI: 10.1002/(SICI)1521-396X(199911)176:1<443::AID-PSSA443>3.0.CO;2-Q
EID: 2-s2.0-0033221604
Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy
Murphy, M.J., Foutz, B.E., Chu, K., Wu, H., Yeo, W., Schaff, W.J., Ambacher, O., Eastman, L.F., Eustis, T.J., Dimitrov, R., Stutzmann, M., Rieger, W.
1999
journal article
MRS Internet Journal of Nitride Semiconductor Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0005487525&partnerID=MN8TOARS
EID: 2-s2.0-0005487525
Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy
Murphy, M.J., Foutz, B.E., Chu, K., Wu, H., Yeo, W., Schaff, W.J., Ambacher, O., Eastman, L.F., Eustis, T.J., Dimitrov, R., Stutzmann, M., Rieger, W.
1999
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17944394661&partnerID=MN8TOARS
EID: 2-s2.0-17944394661
ODMR of bound excitons in Mg-doped GaN
Bayerl, M.W., Brandt, M.S., Suski, T., Grzegory, I., Porowski, S., Stutzmann, M.
1999
journal article
Physica B: Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033328707&partnerID=MN8TOARS
DOI: 10.1016/S0921-4526(99)00421-4
EID: 2-s2.0-0033328707
Optical and electrical properties of doped amorphous silicon suboxides
Janssen, R., Janotta, A., Dimova-Malinovska, D., Stutzmann, M.
1999
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001180217&partnerID=MN8TOARS
EID: 2-s2.0-0001180217
Passivation of boron in diamond by deuterium
Zeisel, R., Nebel, C.E., Stutzmann, M.
1999
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032620598&partnerID=MN8TOARS
EID: 2-s2.0-0032620598
Photocapacitance study of boron-doped chemical-vapor-deposited diamond
Zeisel, R., Nebel, C.E., Stutzmann, M., Gheeraert, E., Deneuville, A.
1999
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001182666&partnerID=MN8TOARS
EID: 2-s2.0-0001182666
Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon
Rezek, B., Nebel, C.E., Stutzmann, M.
1999
journal article
Japanese Journal of Applied Physics, Part 2: Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033327126&partnerID=MN8TOARS
EID: 2-s2.0-0033327126
Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon
Vogg, G., Zamanzadeh-Hanebuth, N., Brandt, M.S., Stutzmann, M., Albrecht, M.
1999
journal article
Monatshefte fur Chemie
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033479412&partnerID=MN8TOARS
EID: 2-s2.0-0033479412
Reflectance difference spectroscopy characterization of AlxGa1 xN-compound layers
Rossow, U., Aspnes, D.E., Ambacher, O., Cimalla, V., Edwards, N.V., Bremser, M., Davis, R.F., Schaefer, J.A., Stutzmann, M.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033229651&partnerID=MN8TOARS
EID: 2-s2.0-0033229651
Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
Ambacher, O., Dimitrov, R., Stutzmann, M., Foutz, B.E., Murphy, M.J., Smart, J.A., Shealy, J.R., Weimann, N.G., Chu, K., Chumbes, M., Green, B., Sierakowski, A.J., Schaff, W.J., Eastman, L.F.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033229652&partnerID=MN8TOARS
EID: 2-s2.0-0033229652
The origin of red luminescence from Mg-doped GaN
Bayerl, M.W., Brandt, M.S., Glaser, E.R., Wickenden, A.E., Koleske, D.D., Henry, R.L., Stutzmann, M.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033242999&partnerID=MN8TOARS
EID: 2-s2.0-0033242999
Transmission spectra of InGaN single quantum wells and InGaN/GaN heterostructures grown by metalorganic chemical vapor deposition
Kim, J.W., Park, Y.K., Kim, Y.T., Son, C.-S., Choi, I.-H., Ambacher, O., Stutzmann, M.
1999
journal article
Journal of the Korean Physical Society
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001820779&partnerID=MN8TOARS
EID: 2-s2.0-0001820779
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures
Ambacher, O., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Schaff, W.J., Eastman, L.F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J.
1999
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001590229&partnerID=MN8TOARS
EID: 2-s2.0-0001590229
Vibrational anti-crossing in siloxene
Brandt, M.S., Höppel, L., Zamanzadeh-Hanebuth, N., Vogg, G., Stutzmann, M.
1999
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033242185&partnerID=MN8TOARS
EID: 2-s2.0-0033242185
Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy
Ambacher, O., Brunner, D., Dimitrov, R., Stutzmann, M., Sohmer, A., Scholz, F.
1998
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032028566&partnerID=MN8TOARS
EID: 2-s2.0-0032028566
Amorphous silicon suboxide light-emitting diodes
Janssen, R., Karrer, U., Dimova-Malinovska, D., Stutzmann, M.
1998
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032066991&partnerID=MN8TOARS
EID: 2-s2.0-0032066991
Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy
Neubauer, B., Rosenauer, A., Gerthsen, D., Ambacher, O., Stutzmann, M.
1998
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000377942&partnerID=MN8TOARS
DOI: 10.1063/1.122041
EID: 2-s2.0-0000377942
a-SiOx: H thin film light emitting devices for Si-based optoelectronics
Rossi, M.C., Salvatori, S., Scrimizzi, F., Galluzzi, F., Janssen, R., Stutzmann, M.
1998
journal article
Journal of Luminescence
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0006798543&partnerID=MN8TOARS
EID: 2-s2.0-0006798543
Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy
Dimitrov, R., Wittmer, L., Felsl, H.P., Mitchell, A., Ambacher, O., Stutzmann, M.
1998
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032139601&partnerID=MN8TOARS
EID: 2-s2.0-0032139601
Carrier trapping and release in CVD-diamond films
Nebel, C.E., Stutzmann, M., Lacher, F., Koidl, P., Zachai, R.
1998
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031995283&partnerID=MN8TOARS
EID: 2-s2.0-0031995283
Characterization of laser patterned a-Si:H thin films by combined AFM/local current measurements
Rezek, B., Stuchlík, J., Fejfar, A., Kočka, J., Nebel, C.E., Stutzmann, M.
1998
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0002678374&partnerID=MN8TOARS
EID: 2-s2.0-0002678374
Characterization of laser patterned a-Si:H thin films by combined AFM/local current measurements
Rezek, B., Stuchlik, J., Fejfar, A., Kocka, J., Nebel, C.E., Stutzmann, M.
1998
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032204854&partnerID=MN8TOARS
EID: 2-s2.0-0032204854
Conductive microcrystalline-Si films produced by laser processing
Dahlheimer, B., Karrer, U., Nebel, C.E., Stutzmann, M.
1998
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068612&partnerID=MN8TOARS
EID: 2-s2.0-0032068612
Deep level transient spectroscopy of synthetic type IIb diamond
Zeisel, R., Nebel, C.E., Stutzmann, M.
1998
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000506438&partnerID=MN8TOARS
EID: 2-s2.0-0000506438
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
Metzger, T., Höpler, R., Born, E., Ambacher, O., Stutzmann, M., Stömmer, R., Schuster, M., Göbel, H., Christiansen, S., Albrecht, M., Strunk, H.P.
1998
journal article
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032056159&partnerID=MN8TOARS
EID: 2-s2.0-0032056159
Electrical and structural properties of AlGaN: A comparison with CVD diamond
Stutzmann, M., Ambacher, O., Angerer, H., Nebel, C.E., Rohrer, E.
1998
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031996275&partnerID=MN8TOARS
EID: 2-s2.0-0031996275
Electrically detected magnetic resonance of a-Si:H at low magnetic fields: The influence of hydrogen on the dangling bond resonance
Brandt, M.S., Bayerl, M.W., Stutzmann, M., Graeff, C.F.O.
1998
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4243593747&partnerID=MN8TOARS
EID: 2-s2.0-4243593747
Electroluminescent properties of a-SiOx:H alloys
Knápek, P., Luterová, K., Pelant, I., Fejfar, A., Kočka, J., Kudrna, J., Malý, P., Janssen, R., Stutzmann, M.
1998
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0347487231&partnerID=MN8TOARS
EID: 2-s2.0-0347487231
High-resolution thermal processing of semiconductors using pulsed-laser interference patterning
Kelly, M.K., Rogg, J., Nebel, C.E., Stutzmann, M., Kátai, Sz.
1998
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032049826&partnerID=MN8TOARS
EID: 2-s2.0-0032049826
Laser-interference crystallization of amorphous silicon: Applications and properties
Nebel, C.E., Christiansen, S., Strunk, H.P., Dahlheimer, B., Karrer, U., Stutzmann, M.
1998
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032048420&partnerID=MN8TOARS
EID: 2-s2.0-0032048420
Minority carrier diffusion length in AlGaN: A combined electron beam induced current and transmission microscopy study
Cremades, A., Albrecht, M., Voigt, A., Krinke, J., Dimitrov, R., Ambacher, O., Stutzmann, M.
1998
book
Solid State Phenomena
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032314323&partnerID=MN8TOARS
EID: 2-s2.0-0032314323
Negative electron affinity of cesiated p-GaN(0001) surfaces
Eyckeler, M., Mönch, W., Kampen, T.U., Dimitrov, R., Ambacher, O., Stutzmann, M.
1998
journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001265540&partnerID=MN8TOARS
EID: 2-s2.0-0001265540
Nitrogen effusion and self-diffusion in Ga14N/Ga15N isotope heterostructures
Ambacher, O., Freudenberg, F., Dimitrov, R., Angerer, H., Stutzmann, M.
1998
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032064519&partnerID=MN8TOARS
EID: 2-s2.0-0032064519
Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond
Rohrer, E., Nebel, C.E., Stutzmann, M., Flöter, A., Zachai, R., Jiang, X., Klages, C.-P.
1998
journal article
Diamond and Related Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032093939&partnerID=MN8TOARS
EID: 2-s2.0-0032093939
Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)
Kaiser, S., Preis, H., Gebhardt, W., Ambacher, O., Angerer, H., Stutzmann, M., Rosenauer, A., Gerthsen, D.
1998
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031647543&partnerID=MN8TOARS
EID: 2-s2.0-0031647543
Realization and characterization of Si nanostructures
Groos, G., Stutzmann, M.
1998
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032047057&partnerID=MN8TOARS
EID: 2-s2.0-0032047057
Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance
Wimbauer, T., Brandt, M.S., Bayerl, M.W., Reinacher, N.M., Stutzmann, M., Hofmann, D.M., Mochizuki, Y., Mizuta, M.
1998
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0342587974&partnerID=MN8TOARS
EID: 2-s2.0-0342587974
Si-nanostructures made by laser-annealing
Groos, G., Stutzmann, M.
1998
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068682&partnerID=MN8TOARS
EID: 2-s2.0-0032068682
Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements
Deger, C., Born, E., Angerer, H., Ambacher, O., Stutzmann, M., Hornsteiner, J., Riha, E., Fischerauer, G.
1998
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000939713&partnerID=MN8TOARS
DOI: 10.1063/1.121368
EID: 2-s2.0-0000939713
Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films
Bayerl, M.W., Brandt, M.S., Angerer, H., Ambacher, O., Stutzmann, M.
1998
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032257279&partnerID=MN8TOARS
EID: 2-s2.0-0032257279
Spin splitting in GaAs quantum wire structures
Silveira, E., Kelly, M.K., Nebel, C.E., Böhm, G., Abstreiter, G., Stutzmann, M.
1998
journal article
Physica E: Low-Dimensional Systems and Nanostructures
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000510952&partnerID=MN8TOARS
EID: 2-s2.0-0000510952
The influence of the Al-content on the optical gain in AlGaN heterostructures
Holst, J., Eckey, L., Hoffmann, A., Ambacher, O., Stutzmann, M.
1998
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032093713&partnerID=MN8TOARS
EID: 2-s2.0-0032093713
Thermopower investigation of n- and p-type GaN
Brandt, M.S., Herbst, P., Angerer, H., Ambacher, O., Stutzmann, M.
1998
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000552647&partnerID=MN8TOARS
EID: 2-s2.0-0000552647
Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire
Pau, S., Liu, Z.X., Kuhl, J., Ringling, J., Grahn, H.T., Khan, M.A., Sun, C.J., Ambacher, O., Stutzmann, M.
1998
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000265775&partnerID=MN8TOARS
EID: 2-s2.0-0000265775
Vibrational properties of siloxene: Isotope substitution studies
Zamanzadeh-Hanebuth, N., Brandt, M.S., Stutzmann, M.
1998
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18744426205&partnerID=MN8TOARS
EID: 2-s2.0-18744426205
AlGaN-based Bragg reflectors
Ambacher, O., Arzberger, M., Brunner, D., Angerer, H., Freudenberg, F., Esser, N., Wethkamp, T., Wilmers, K., Richter, W., Stutzmann, M.
1997
journal article
MRS Internet Journal of Nitride Semiconductor Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0343993912&partnerID=MN8TOARS
EID: 2-s2.0-0343993912
Characterization of AlxGa1-xN films prepared by plasma-induced molecular-beam epitaxy on c-plane sapphire
Angerer, H., Ambacher, O., Stutzmann, M., Metzger, T., Hopler, R., Born, E., Bergmaier, A., Dollinger, G.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030684472&partnerID=MN8TOARS
EID: 2-s2.0-0030684472
Characterization of polycrystalline diamond by electron spin resonance and related techniques
Graeff, C.F.O., Nebel, C.E., Stutzmann, M.
1997
journal article
Brazilian Journal of Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031312557&partnerID=MN8TOARS
EID: 2-s2.0-0031312557
Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy
Graeff, C.F.O., Nebel, C.E., Stutzmann, M., Flöter, A., Zachai, R.
1997
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030787205&partnerID=MN8TOARS
EID: 2-s2.0-0030787205
Coherent X-ray scattering phenomenon in highly disordered epitaxial AIN films
Metzger, T., Höpler, R., Born, E., Christiansen, S., Albrecht, M., Strunk, H.P., Ambacher, O., Stutzmann, M., Stömmer, R., Schuster, M., Göbel, H.
1997
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031208723&partnerID=MN8TOARS
EID: 2-s2.0-0031208723
Defect transitions in GaN between 3.0 and 3.4 eV
Rieger, W., Ambacher, O., Rohrer, E., Angerer, H., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030717037&partnerID=MN8TOARS
EID: 2-s2.0-0030717037
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films
Angerer, H., Brunner, D., Freudenberg, F., Ambacher, O., Stutzmann, M., Höpler, R., Metzger, T., Born, E., Dollinger, G., Bergmaier, A., Karsch, S., Körner, H.-J.
1997
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000649572&partnerID=MN8TOARS
EID: 2-s2.0-0000649572
Electrically detected magnetic resonance at different microwave frequencies
Brandt, M.S., Bayerl, M.W., Reinacher, N.M., Wimbauer, T., Stutzmann, M.
1997
book
Materials Science Forum
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031358811&partnerID=MN8TOARS
EID: 2-s2.0-0031358811
Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes
Bayerl, M.W., Brandt, M.S., Stutzmann, M.
1997
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0002680580&partnerID=MN8TOARS
EID: 2-s2.0-0002680580
Electrically detected magnetic resonance on GaAs/AlGaAs heterostructures
Wimbauer, T., Hofmann, D.M., Meyer, B.K., Brandt, M.S., Brandl, T., Bayerl, M.W., Reinacher, N.M., Stutzmann, M., Mochizuki, Y., Mizuta, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030718884&partnerID=MN8TOARS
EID: 2-s2.0-0030718884
Electronic properties of CVD and synthetic diamond
Nebel, C.E., Münz, J., Stutzmann, M., Zachai, R., Güttler, H.
1997
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001767457&partnerID=MN8TOARS
EID: 2-s2.0-0001767457
Electronic transport in crystalline siloxene
Brandt, M.S., Puchert, T., Stutzmann, M.
1997
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031146147&partnerID=MN8TOARS
EID: 2-s2.0-0031146147
Elemental analysis on group-III nitrides using heavy ion ERD
Dollinger, G., Karsch, S., Ambacher, O., Angerer, H., Bergmaier, A., Schmelmer, O., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031386533&partnerID=MN8TOARS
EID: 2-s2.0-0031386533
Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance
Wimbauer, T., Brandt, M.S., Bayerl, M.W., Stutzmann, M., Hofmann, D.M., Mochizuki, Y., Mizuta, M.
1997
book
Materials Science Forum
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031374074&partnerID=MN8TOARS
EID: 2-s2.0-0031374074
Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
Ambacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M.
1997
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030681919&partnerID=MN8TOARS
EID: 2-s2.0-0030681919
Hydrogen in gallium nitride grown by MOCVD
Ambacher, O., Angerer, H., Dimitrov, R., Rieger, W., Stutzmann, M., Dollinger, G., Bergmaier, A.
1997
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030705339&partnerID=MN8TOARS
EID: 2-s2.0-0030705339
Influence of magnesium doping on the structural properties of GaN layers
Cros, A., Dimitrov, R., Angerer, H., Ambacher, O., Stutzmann, M., Christiansen, S., Albrecht, M., Strunk, H.P.
1997
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031274694&partnerID=MN8TOARS
EID: 2-s2.0-0031274694
Laser induced melting and crystallization of boron doped amorphous silicon
Nebel, C.E., Schoeniger, S., Dahlheimer, B., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031356347&partnerID=MN8TOARS
EID: 2-s2.0-0031356347
Laser-processing for patterned and free-standing nitride films
Kelly, M.K., Ambacher, O., Dimitrov, R., Angerer, H., Handschuh, R., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031363674&partnerID=MN8TOARS
EID: 2-s2.0-0031363674
Microscopic aspects of the Staebler-Wronski effect
Stutzmann, Martin
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031356346&partnerID=MN8TOARS
EID: 2-s2.0-0031356346
Optical constants of epitaxial AlGaN films and their temperature dependence
Brunner, D., Angerer, H., Bustarret, E., Freudenberg, F., Höpler, R., Dimitrov, R., Ambacher, O., Stutzmann, M.
1997
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-1842724516&partnerID=MN8TOARS
EID: 2-s2.0-1842724516
Optical-gain measurements on GaN and AlxGa1-xN heterostructures
Eckey, L., Holst, J., Kutzer, A., Hoffmann, A., Broser, I., Ambacher, O., Stutzmann, M., Amano, H., Akasaki, I.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030707035&partnerID=MN8TOARS
EID: 2-s2.0-0030707035
Optical process for liftoff of group III-nitride films
Kelly, M.K., Ambacher, O., Dimitrov, R., Handschuh, R., Stutzmann, M.
1997
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030649030&partnerID=MN8TOARS
EID: 2-s2.0-0030649030
Photoquenching of persistent photoconductivity in n-type GaN
Hirsch, Michele T., Seifert, O., Kirfel, O., Parisi, J., Wolk, J.A., Walukiewicz, W., Haller, E.E., Ambacher, O., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031348414&partnerID=MN8TOARS
EID: 2-s2.0-0031348414
Properties and applications of MBE grown AlGaN
Stutzmann, M., Ambacher, O., Cros, A., Brandt, M.S., Angerer, H., Dimitrov, R., Reinacher, N., Metzger, T., Höpler, R., Brunner, D., Freudenberg, F., Handschuh, R., Deger, Ch.
1997
journal article
Materials Science and Engineering B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000078844&partnerID=MN8TOARS
EID: 2-s2.0-0000078844
Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon
Nebel, C.E., Dahlheimer, B., Karrer, U., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031351333&partnerID=MN8TOARS
EID: 2-s2.0-0031351333
Raman characterization of the optical phonons in Al xGa 1-xN layers grown by MBE and MOCVD
Cros, A., Angerer, H., Handschuh, R., Ambacher, O., Stutzmann, M.
1997
journal article
MRS Internet Journal of Nitride Semiconductor Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4043050862&partnerID=MN8TOARS
EID: 2-s2.0-4043050862
Raman spectra of isotopic GaN
Zhang, J.M., Ruf, T., Cardona, M., Ambacher, O., Stutzmann, M., Wagner, J.-M., Bechstedt, F.
1997
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000703766&partnerID=MN8TOARS
EID: 2-s2.0-0000703766
Raman study of the optical phonons in AlxGa1-xN alloys
Cros, A., Angerer, H., Ambacher, O., Stutzmann, M., Höpler, R., Metzger, T.
1997
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031258464&partnerID=MN8TOARS
EID: 2-s2.0-0031258464
Realization of AlGaAs antidot arrays by pulsed laser interference gratings
Nebel, C.E., Rogg, J., Kelly, M.K., Dahlheimer, B., Rother, M., Bichler, M., Wegscheider, W., Stutzmann, M.
1997
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0039737560&partnerID=MN8TOARS
EID: 2-s2.0-0039737560
Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors
Kawachi, G., Graeff, C.F.O., Brandt, M.S., Stutzmann, M.
1997
journal article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030679201&partnerID=MN8TOARS
EID: 2-s2.0-0030679201
Spin-dependent transport in Si thin-film transistors
Kawachi, G., Graeff, C.F.O., Brandt, M.S., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031381028&partnerID=MN8TOARS
EID: 2-s2.0-0031381028
Spin resonance investigations of GaN and AlGaN
Reinacher, N.M., Angerer, H., Ambacher, O., Brandt, M.S., Stutzmann, M.
1997
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030706448&partnerID=MN8TOARS
EID: 2-s2.0-0030706448
Sub-bandgap spectroscopy of chemical vapor deposition diamond
Rohrer, E., Graeff, C.F.O., Nebel, C.E., Stutzmann, M., Güttler, H., Zachai, R.
1997
journal article
Materials Science and Engineering B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0012584772&partnerID=MN8TOARS
EID: 2-s2.0-0012584772
The rapid research notes of physica status solidi: A new forum for fast publication of your latest results in the field of solid state physics
Stutzmann, M.
1997
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030715930&partnerID=MN8TOARS
EID: 2-s2.0-0030715930
Transport properties and electroluminescence of siloxene
Rosenbauer, M., Stutzmann, M.
1997
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4143104722&partnerID=MN8TOARS
EID: 2-s2.0-4143104722
Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
Kawachi, G., Graeff, C.F.O., Brandt, M.S., Stutzmann, M.
1996
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000814080&partnerID=MN8TOARS
EID: 2-s2.0-0000814080
Defect-related optical transitions in GaN
Rieger, W., Dimitrov, R., Brunner, D., Rohrer, E., Ambacher, O., Stutzmann, M.
1996
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000523633&partnerID=MN8TOARS
EID: 2-s2.0-0000523633
Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers
Graeff, C.F.O., Stutzmann, M., Miyazaki, S.
1996
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5344226328&partnerID=MN8TOARS
EID: 2-s2.0-5344226328
Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes
Reinacher, N.M., Brandt, M.S., Stutzmann, M.
1996
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030259256&partnerID=MN8TOARS
EID: 2-s2.0-0030259256
ESR and LESR studies in CVD diamond
Graeff, C.F.O., Rohrer, E., Nebel, C.E., Stutzmann, M., Guettler, H., Zachai, R.
1996
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030389094&partnerID=MN8TOARS
EID: 2-s2.0-0030389094
Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
Ambacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M.
1996
journal article
Journal of Crystal Growth
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030565188&partnerID=MN8TOARS
EID: 2-s2.0-0030565188
Hall-effect and sign properties in hydrogenated amorphous and disordered crystalline silicon
Nebel, C.E., Rother, M., Summonte, C., Heintze, M., Stutzmann, M.
1996
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030382855&partnerID=MN8TOARS
EID: 2-s2.0-0030382855
Improved aluminum nitride thin films grown by MOCVD from tritertiarybutylaluminum and ammonia
Metzger, T., Born, E., Stoemmer, R., Rieger, W., Dimitrov, R., Lentz, D., Angerer, H., Ambacher, O., Stutzmann, M.
1996
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030387818&partnerID=MN8TOARS
EID: 2-s2.0-0030387818
Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
Rieger, W., Metzger, T., Angerer, H., Dimitrov, R., Ambacher, O., Stutzmann, M.
1996
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030087417&partnerID=MN8TOARS
DOI: 10.1063/1.116115
EID: 2-s2.0-0030087417
Interdiffusion and carrier recombination in high intensity transient gratings
Schwarz, R., Grebner, S., Nebel, C.E., Lanz, M., Stutzmann, M.
1996
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030379505&partnerID=MN8TOARS
EID: 2-s2.0-0030379505
Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings
Kelly, M.K., Nebel, C.E., Stutzmann, M., Böhm, G.
1996
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030126376&partnerID=MN8TOARS
DOI: 10.1063/1.115647
EID: 2-s2.0-0030126376
Nitrogen-related dopant and defect states in CVD diamond
Rohrer, E., Graeff, C.F.O., Janssen, R., Nebel, C.E., Stutzmann, M., Güttler, H., Zachai, R.
1996
journal article
Physical Review B - Condensed Matter and Materials Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000010788&partnerID=MN8TOARS
EID: 2-s2.0-0000010788
Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence
Rossi, M.C., Brandt, M.S., Stutzmann, M.
1996
journal article
Applied Surface Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030564843&partnerID=MN8TOARS
DOI: 10.1016/0169-4332(96)00073-6
EID: 2-s2.0-0030564843
Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond
Graeff, C.F.O., Rohrer, E., Nebel, C.E., Stutzmann, M., Güttler, H., Zachai, R.
1996
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0039523697&partnerID=MN8TOARS
EID: 2-s2.0-0039523697
Optical patterning of GaN films
Kelly, M.K., Ambacher, O., Dahlheimer, B., Groos, G., Dimitrov, R., Angerer, H., Stutzmann, M.
1996
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000223380&partnerID=MN8TOARS
EID: 2-s2.0-0000223380
PEMBE-growth of gallium nitride on (0001) sapphire: A comparison to MOCVD grown GaN
Angerer, H., Ambacher, O., Dìmìtrov, R., Metzger, Th., Rieger, W., Stutzmann, M.
1996
journal article
MRS Internet Journal of Nitride Semiconductor Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4043084892&partnerID=MN8TOARS
EID: 2-s2.0-4043084892
Properties of hydrogenated amorphous silicon suboxide alloys with visible room-temperature photoluminescence
Zacharias, M., Dimova-Malinovska, D., Stutzmann, M.
1996
journal article
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001320401&partnerID=MN8TOARS
EID: 2-s2.0-0001320401
Spin-dependent transport in amorphous silicon thin-film transistors
Graeff, C.F.O., Kawachi, G., Brandt, M.S., Stutzmann, M., Powell, M.J.
1996
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17144447953&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(96)00059-2
EID: 2-s2.0-17144447953
Spin-dependent transport in GaN light emitting diodes
Brandt, M.S., Reinacher, N.M., Ambacher, O., Stutzmann, M.
1996
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029763868&partnerID=MN8TOARS
EID: 2-s2.0-0029763868
Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy
Ambacher, O., Rieger, W., Ansmann, P., Angerer, H., Moustakas, T.D., Stutzmann, M.
1996
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030083196&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(95)00658-3
EID: 2-s2.0-0030083196
Sub-micron silicon structures for thin film solar cells
Nebel, C.E., Dahlheimer, B., Schöniger, S., Stutzmann, M.
1996
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030528570&partnerID=MN8TOARS
EID: 2-s2.0-0030528570
Thermal stability and desorption of group III nitrides prepared by metal organic chemical vapor deposition
Ambacher, O., Brandt, M.S., Dimitrov, R., Metzger, T., Stutzmann, M., Fischer, R.A., Miehr, A., Bergmaier, A., Dollinger, G.
1996
journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5344240387&partnerID=MN8TOARS
EID: 2-s2.0-5344240387
The sign of the Hall effect in hydrogenated amorphous and disordered crystalline silicon
Nebel, C.E., Rother, M., Stutzmann, M., Summonte, C., Heintze, M.
1996
journal article
Philosophical Magazine Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030418572&partnerID=MN8TOARS
EID: 2-s2.0-0030418572
X-ray diffraction study of gallium nitride grown by MOCVD
Metzger, Th., Angerer, H., Ambacher, O., Stutzmann, M., Born, E.
1996
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030532349&partnerID=MN8TOARS
EID: 2-s2.0-0030532349
Yellow luminescence and hydrocarbon contamination in MOVPE-grown GaN
De Mierry, P., Ambacher, O., Kratzer, H., Stutzmann, M.
1996
journal article
Physica Status Solidi (A) Applied Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030408203&partnerID=MN8TOARS
EID: 2-s2.0-0030408203
Correlation between the luminescence and Raman peaks in quantum-confined systems
Deák, P., Hajnal, Z., Stutzmann, M., Fuchs, H.D.
1995
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029235885&partnerID=MN8TOARS
DOI: 10.1016/0040-6090(94)05663-X
EID: 2-s2.0-0029235885
Defect creation in amorphous-silicon thin-film transistors
Graeff, C.F.O., Brandt, M.S., Stutzmann, M., Powell, M.J.
1995
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-35949005801&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.52.4680
EID: 2-s2.0-35949005801
Laser characterization of semiconductors
Stutzmann, M.
1995
conference paper
Materials Science Forum
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029237620&partnerID=MN8TOARS
EID: 2-s2.0-0029237620
Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings
Kelly, M.K., Nebel, C.E., Stutzmann, M., Böhm, G.
1995
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36449002028&partnerID=MN8TOARS
EID: 2-s2.0-36449002028
Nonlinear optical defect absorption in hydrogenated amorphous silicon
Rieger, W., Lanz, M., Graeff, C.F.O., Nebel, C.E., Stutzmann, M.
1995
conference paper
Materials Research Society Symposium - Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029546411&partnerID=MN8TOARS
EID: 2-s2.0-0029546411
Resonantly excited photoluminescence in porous silicon
Rosenbauer, M., Leach, D.H., Sendova-Vassileva, M., Finkbeiner, S., Stutzmann, M.
1995
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029231917&partnerID=MN8TOARS
DOI: 10.1016/0040-6090(94)05665-Z
EID: 2-s2.0-0029231917
Resonantly excited photoluminescence spectra of porous silicon
Rosenbauer, M., Finkbeiner, S., Bustarret, E., Weber, J., Stutzmann, M.
1995
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000199139&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.51.10539
EID: 2-s2.0-0000199139
Spin-dependent transport in SiC and III-V semiconductor devices
Reinacher, N.M., Brandt, M.S., Stutzmann, M.
1995
conference paper
Materials Science Forum
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029516839&partnerID=MN8TOARS
EID: 2-s2.0-0029516839
Structural and luminescence studies of stain-etched and electrochemically etched germanium
Sendova-Vassileva, M., Tzenov, N., Dimova-Malinovska, D., Rosenbauer, M., Stutzmann, M., Josepovits, K.V.
1995
journal article
Thin Solid Films
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029235884&partnerID=MN8TOARS
DOI: 10.1016/0040-6090(94)05673-2
EID: 2-s2.0-0029235884
Triplet excitons in porous silicon and siloxene
Brandt, M.S., Stutzmann, M.
1995
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029254884&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(94)00819-1
EID: 2-s2.0-0029254884
An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method
Brandt, M.S., Stutzmann, M.
1994
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36449003157&partnerID=MN8TOARS
DOI: 10.1063/1.356223
EID: 2-s2.0-36449003157
Defects and recombination in disordered silicon
Stutzmann, Martin, Brandt, Martin S.
1994
conference paper
Materials Science Forum
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028607677&partnerID=MN8TOARS
EID: 2-s2.0-0028607677
Effects of pressure on the optical absorption and photoluminescence of Wöhler siloxene
Ernst, S., Rosenbauer, M., Schwarz, U., Dek, P., Syassen, K., Stutzmann, M., Cardona, M.
1994
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-18844435605&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.49.5362
EID: 2-s2.0-18844435605
Lateral structuring of silicon thin films by interference crystallization
Heintze, M., Santos, P.V., Nebel, C.E., Stutzmann, M.
1994
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0028766484&partnerID=MN8TOARS
DOI: 10.1063/1.111347
EID: 2-s2.0-0028766484
Plasma damage and acceptor passivation in D2-plasma-treated InP:Zn: A photoluminescence and ellipsometry study
De Mierry, P., Etchegoin, P., Stutzmann, M.
1994
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0042828232&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.49.5283
EID: 2-s2.0-0042828232
Pulsed-light soaking of hydrogenated amorphous silicon
Stutzmann, M., Rossi, M.C., Brandt, M.S.
1994
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001436524&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.50.11592
EID: 2-s2.0-0001436524
Spin-dependent photoconductivity in hydrogenated amorphous germanium and silicon-germanium alloys
Graeff, C.F.O., Stutzmann, M., Brandt, M.S.
1994
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0345027687&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.49.11028
EID: 2-s2.0-0345027687
Accelerated hydrogen migration under steady-state and pulsed illumination in a-Si:H
Santos, P.V., Brandt, M.S., Street, R.A., Stutzmann, M.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027907006&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)90543-7
EID: 2-s2.0-0027907006
Are there charged dangling bonds in device quality amorphous silicon?
Brandt, M.S., Asano, A., Stutzmann, M.
1993
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027801939&partnerID=MN8TOARS
EID: 2-s2.0-0027801939
Comment on]] Temperature dependence of the radiative lifetime in porous silicon"
Rosenbauer, M., Fuchs, H., Stutzmann, M.
1993
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0005801382&partnerID=MN8TOARS
DOI: 10.1063/1.110005
EID: 2-s2.0-0005801382
Electronic and structural properties of porous silicon
Stutzmann, M., Brandt, M.S., Bustarret, E., Fuchs, H.D., Rosenbauer, M., Höpner, A., Weber, J.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027907025&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)91150-2
EID: 2-s2.0-0027907025
Electronic defects in silicon induced by deuterium plasma treatment
Dimova-Malinovska, D., Stutzmann, M.
1993
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027594692&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(93)90458-Y
EID: 2-s2.0-0027594692
Light-induced annealing of metastable defects in hydrogenated amorphous silicon
Graeff, C.F.O., Buhleier, R., Stutzmann, M.
1993
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0012199538&partnerID=MN8TOARS
DOI: 10.1063/1.109170
EID: 2-s2.0-0012199538
Light scattering by acoustic phonons in unhydrogenated and hydrogenated amorphous silicon
Bustarret, E., Thomsen, C., Stutzmann, M., Asano, A., Summonte, C.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027906738&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)91149-W
EID: 2-s2.0-0027906738
Luminescence and optical properties of siloxene
Stutzmann, M., Brandt, M.S., Rosenbauer, M., Fuchs, H.D., Finkbeiner, S., Weber, J., Deak, P.
1993
journal article
Journal of Luminescence
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027699902&partnerID=MN8TOARS
DOI: 10.1016/0022-2313(93)90150-L
EID: 2-s2.0-0027699902
Microscopic origin and energy levels of the states produced in a-Si:H by phosphorus doping
Kočka, J., Stuchlík, J., Stutzmann, M., Chen, L., Tauc, J.
1993
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-35949006659&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.47.13283
EID: 2-s2.0-35949006659
Photoluminescence excitation spectroscopy of porous silicon and siloxene
Stutzmann, M., Brandt, M.S., Rosenbauer, M., Weber, J., Fuchs, H.D.
1993
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000460313&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.47.4806
EID: 2-s2.0-0000460313
Porous silicon and siloxene: Vibrational and structural properties
Fuchs, H.D., Stutzmann, M., Brandt, M.S., Rosenbauer, M., Weber, J., Breitschwerdt, A., Deák, P., Cardona, M.
1993
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000210622&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.48.8172
EID: 2-s2.0-0000210622
Properties of sputtered a-SiOx:H alloys with a visible luminescence
Zacharias, M., Freistedt, H., Stolze, F., Drüsedau, T.P., Rosenbauer, M., Stutzmann, M.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-6144250903&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)91188-9
EID: 2-s2.0-6144250903
Spin-dependent photoconductivity as a function of wavelength: A test for the constant photocurrent method in a-Si:H
Brandt, M.S., Stutzmann, M.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17944383619&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)90610-A
EID: 2-s2.0-17944383619
Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys
Graeff, C.F.O., Brandt, M.S., Eberhardt, K., Chambouleyron, I., Stutzmann, M.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027906882&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)90481-C
EID: 2-s2.0-0027906882
Spin-dependent transport in amorphous silicon nin-structures
Brandt, M.S., Stutzmann, M., Kočka, J.
1993
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044454863&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(93)91092-H
EID: 2-s2.0-17044454863
Temperature dependence of luminescence in porous silicon and related materials
Rosenbauer, M., Stutzmann, M., Fuchs, H.D., Finkbeiner, S., Weber, J.
1993
journal article
Journal of Luminescence
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027699897&partnerID=MN8TOARS
DOI: 10.1016/0022-2313(93)90124-6
EID: 2-s2.0-0027699897
Transient photoluminescence decay in porous silicon and siloxene
Finkbeiner, S., Weber, J., Rosenbauer, M., Stutzmann, M.
1993
journal article
Journal of Luminescence
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027701848&partnerID=MN8TOARS
DOI: 10.1016/0022-2313(93)90139-E
EID: 2-s2.0-0027701848
Two-dimensional excitons in siloxene
Brandt, M.S., Rosenbauer, M., Stutzmann, M.
1993
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027837402&partnerID=MN8TOARS
EID: 2-s2.0-0027837402
Visible luminescence from porous silicon and siloxene: Recent results
Fuchs, H.D., Rosenbauer, M., Brandt, M.S., Ernst, S., Finkbeiner, S., Stutzmann, M., Syassen, K., Weber, J., Queisser, H.J., Cardona, M.
1993
conference paper
Materials Research Society Symposium Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027150810&partnerID=MN8TOARS
EID: 2-s2.0-0027150810
Accelerated stability test for amorphous silicon solar cells
Rossi, M.C., Brandt, M.S., Stutzmann, M.
1992
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0006659794&partnerID=MN8TOARS
DOI: 10.1063/1.107193
EID: 2-s2.0-0006659794
Excitonic states in hydrogenated amorphous silicon
Stutzmann, M., Brandt, M.S.
1992
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027108565&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80523-X
EID: 2-s2.0-0027108565
New growth technique for luminescent layers on silicon
Brandt, M.S., Breitschwerdt, A., Fuchs, H.D., Höpner, A., Rosenbauer, M., Stutzmann, M., Weber, J.
1992
journal article
Applied Physics A Solids and Surfaces
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0009343957&partnerID=MN8TOARS
DOI: 10.1007/BF00324341
EID: 2-s2.0-0009343957
Photoluminescence in deuterated highly doped GaAs(Zn)
De Mierry, P., Stutzmann, M.
1992
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5644227096&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.46.13142
EID: 2-s2.0-5644227096
Siloxene: Chemical quantum confinement due to oxygen in a silicon matrix
Deák, P., Rosenbauer, M., Stutzmann, M., Weber, J., Brandt, M.S.
1992
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3943108667&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.69.2531
EID: 2-s2.0-3943108667
Spin-dependent effects in porous silicon
Brandt, M.S., Stutzmann, M.
1992
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36448999581&partnerID=MN8TOARS
DOI: 10.1063/1.108129
EID: 2-s2.0-36448999581
The origin of visible luminescencefrom "porous silicon": A new interpretation
Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., Cardona, M.
1992
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026678237&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(92)90815-Q
EID: 2-s2.0-0026678237
Visible light emission at room temperature from anodized plasma-deposited silicon thin films
Bustarret, E., Ligeon, M., Bruyère, J.C., Muller, F., Hérino, R., Gaspard, F., Ortega, L., Stutzmann, M.
1992
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0007212835&partnerID=MN8TOARS
DOI: 10.1063/1.107493
EID: 2-s2.0-0007212835
Accelerated metastable defect creation in a-Si:H by short light pulses
Stutzmann, M., Nunnenkamp, J., Brandt, M.S., Asano, A., Rossi, M.C.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026415466&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80098-5
EID: 2-s2.0-0026415466
A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide
Stutzmann, M., Chevrier, J.-B., Herrero, C.P., Breitschwerdt, A.
1991
journal article
Applied Physics A Solids and Surfaces
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026191271&partnerID=MN8TOARS
DOI: 10.1007/BF00323434
EID: 2-s2.0-0026191271
Boron-hydrogen complexes in crystalline silicon
Herrero, C.P., Stutzmann, M., Breitschwerdt, A.
1991
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001467997&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.43.1555
EID: 2-s2.0-0001467997
Compositional dependence of photoluminescence spectra in hydrogenated amorphous silicon-sulfur alloys
Muschik, T., Schwarz, R., Hammam, M., Al-Alawi, S.M., Al-Dallal, S., Aljishi, S., Stutzmann, M., Jin, S.
1991
journal article
Journal of Luminescence
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025791419&partnerID=MN8TOARS
DOI: 10.1016/0022-2313(91)90210-M
EID: 2-s2.0-0025791419
Depth profiling of defects in a-Si:H by photothermal deflection spectroscopy
Asano, A., Stutzmann, M.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-17144438279&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80195-4
EID: 2-s2.0-17144438279
Depth profiling of nonuniform optical absorption in thin films: Application to hydrogenated amorphous silicon
Asano, A., Stutzmann, M.
1991
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0005902574&partnerID=MN8TOARS
DOI: 10.1063/1.349007
EID: 2-s2.0-0005902574
Electric properties of a-Si,S: H and a-Si,Se: H alloys
Aljishi, S., Al-Dallal, S., Al-Alawi, S.M., Hammam, M., Al-Alawi, H.S., Stutzmann, M., Jin, S., Muschik, T., Schawarz, R.
1991
journal article
Solar Energy Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026370880&partnerID=MN8TOARS
DOI: 10.1016/0165-1633(91)90138-B
EID: 2-s2.0-0026370880
Electronic levels of phosphorus donors in a-Si:H
Kočka, J., Stuchlík, J., Stutzmann, M., Chen, L., Tauc, J.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026415537&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80135-8
EID: 2-s2.0-0026415537
Excitons and light-induced degradation of amorphous hydrogenated silicon
Brandt, M.S., Stutzmann, M.
1991
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0006632307&partnerID=MN8TOARS
DOI: 10.1063/1.105144
EID: 2-s2.0-0006632307
Explosive isothermal hydrogen exodiffusion in VHF-GD a-Si:H thick layers
Bustarret, E., Brandt, M., Stutzmann, M., Favre, M.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026415535&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80055-9
EID: 2-s2.0-0026415535
Fast metastable defect-creation in amorphous silicon by femtosecond light pulses
Stutzmann, M., Nunnenkamp, J., Brandt, M.S., Asano, A.
1991
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4243053206&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.67.2347
EID: 2-s2.0-4243053206
High band-gap hydrogenated amorphous silicon-selenium alloys
Al-Dallal, S., Aljishi, S., Hammam, M., Al-Alawi, S.M., Stutzmann, M., Jin, S., Muschik, T., Schwarz, R.
1991
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0012064906&partnerID=MN8TOARS
DOI: 10.1063/1.349038
EID: 2-s2.0-0012064906
Hydrogenation of InAs on GaAs heterostructures
Theys, B., Lusson, A., Chevallier, J., Grattepain, C., Kalem, S., Stutzmann, M.
1991
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0040179602&partnerID=MN8TOARS
DOI: 10.1063/1.349558
EID: 2-s2.0-0040179602
Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs
Leitch, A.W.R., Prescha, Th., Stutzmann, M.
1991
journal article
Applied Surface Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026413673&partnerID=MN8TOARS
DOI: 10.1016/0169-4332(91)90204-W
EID: 2-s2.0-0026413673
Introduction
Chevallier, J., Stutzmann, M.
1991
journal article
Physica B: Physics of Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-44949282835&partnerID=MN8TOARS
EID: 2-s2.0-44949282835
Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method
Brandt, M.S., Stutzmann, M.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026415477&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80093-6
EID: 2-s2.0-0026415477
Molybdenum impurity states in amorphous silicon and related materials
Stutzmann, M., Stuke, J.
1991
journal article
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025948736&partnerID=MN8TOARS
EID: 2-s2.0-0025948736
Spin-dependent conductivity in amorphous hydrogenated silicon
Brandt, M.S., Stutzmann, M.
1991
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000297520&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.43.5184
EID: 2-s2.0-0000297520
States of hydrogen in crystalline silicon
Stutzmann, M., Beyer, W., Tapfer, L., Herrero, C.P.
1991
journal article
Physica B: Physics of Condensed Matter
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026140264&partnerID=MN8TOARS
DOI: 10.1016/0921-4526(91)90130-7
EID: 2-s2.0-0026140264
Structural and electronic properties of ternary hydrogenated amorphous silicon-sulfur-selenium alloys
Hammam, M., Al-Alawi, S.M., Al-Alawi, B., Al-Dallal, S., Aljishi, S., Stutzmann, M.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-23544479287&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80268-6
EID: 2-s2.0-23544479287
Structural properties of Li-doped hydrogenated amorphous silicon
Pierz, K., Stutzmann, M., Zollner, S., Beyer, W., Brillerty, C.
1991
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026415485&partnerID=MN8TOARS
DOI: 10.1016/S0022-3093(05)80068-7
EID: 2-s2.0-0026415485
Deuterium effusion measurements in doped crystalline silicon
Stutzmann, M., Brandt, M.S.
1990
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-30644458197&partnerID=MN8TOARS
DOI: 10.1063/1.347156
EID: 2-s2.0-30644458197
Electronic properties of semiconducting FeSi2 films
Dimitriadis, C.A., Werner, J.H., Logothetidis, S., Stutzmann, M., Weber, J., Nesper, R.
1990
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36549092166&partnerID=MN8TOARS
DOI: 10.1063/1.346601
EID: 2-s2.0-36549092166
Light-induced defect creation in amorphous silicon: Single carrier versus excitonic mechanisms
Stutzmann, M.
1990
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0006659191&partnerID=MN8TOARS
DOI: 10.1063/1.102928
EID: 2-s2.0-0006659191
Structural changes in boron-doped hydrogenated amorphous silicon during long-time annealing below the deposition temperature
Asano, A., Stutzmann, M.
1990
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-35949008909&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.42.5388
EID: 2-s2.0-35949008909
Trap-limited hydrogen diffusion in doped silicon
Herrero, C.P., Stutzmann, M., Breitschwerdt, A., Santos, P.V.
1990
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000580983&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.41.1054
EID: 2-s2.0-0000580983
Defect density and structure of hydrogenated amorphous silicon-sulfur alloys
Aljishi, S., Stutzmann, M., Jin, S., Herrero, C., Al-Dallal, S., Hammam, M., Al-Alawi, S.M.
1989
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024831494&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(89)90617-0
EID: 2-s2.0-0024831494
Defect density in amorphous silicon
Stutzmann, M.
1989
journal article
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024752256&partnerID=MN8TOARS
EID: 2-s2.0-0024752256
Metal impurities in a-Si:H and other amorphous semiconductors
Stutzmann, M.
1989
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024822805&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(89)90602-9
EID: 2-s2.0-0024822805
Microscopic nature of coordination defects in amorphous silicon
Stutzmann, M., Biegelsen, D.K.
1989
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0005072973&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.40.9834
EID: 2-s2.0-0005072973
NMR investigation of hydrogen in amorphous silicon and related materials
Boyce, J.B., Ready, S.E., Stutzmann, M., Norberg, R.E.
1989
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024796134&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(89)90116-6
EID: 2-s2.0-0024796134
Response to "critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]
Jackson, W.B., Tsai, C.C., Stutzmann, M.
1989
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36549098301&partnerID=MN8TOARS
DOI: 10.1063/1.100975
EID: 2-s2.0-36549098301
Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys
Stutzmann, M., Street, R.A., Tsai, C.C., Boyce, J.B., Ready, S.E.
1989
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000617421&partnerID=MN8TOARS
DOI: 10.1063/1.343574
EID: 2-s2.0-0000617421
Dangling or floating bonds in amorphous silicon?
Stutzmann, M., Biegelsen, D.K.
1988
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4243983480&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.60.1682
EID: 2-s2.0-4243983480
Hydrogen vibrations in semiconductors and insulators
Tatarkiewicz, J., Stutzmann, M.
1988
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0024089561&partnerID=MN8TOARS
EID: 2-s2.0-0024089561
Lattice relaxation due to hydrogen passivation in boron-doped silicon
Stutzmann, M., Harsanyi, J., Breitschwerdt, A., Herrero, C.P.
1988
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0141769615&partnerID=MN8TOARS
DOI: 10.1063/1.99052
EID: 2-s2.0-0141769615
Microscopic structure of boron-hydrogen complexes in crystalline silicon
Herrero, C.P., Stutzmann, M.
1988
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0008665199&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.38.12668
EID: 2-s2.0-0008665199
Stress-induced hydrogen motion in Boron-doped crystalline silicon
Herrero, C.P., Stutzmann, M.
1988
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-12144270191&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(88)90827-7
EID: 2-s2.0-12144270191
Detailed investigation of doping in hydrogenated amorphous silicon and germanium
Stutzmann, M., Biegelsen, D.K., Street, R.A.
1987
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001268282&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.35.5666
EID: 2-s2.0-0001268282
Effects of dopant and impurity incorporation on metastable light-induced defect formation
Jackson, W.B., Stutzmann, M., Tsai, C.C.
1987
journal article
Solar Cells
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0542430260&partnerID=MN8TOARS
DOI: 10.1016/0379-6787(87)90141-4
EID: 2-s2.0-0542430260
ELECTRON CORRELATION ENERGIES IN HYDROGENATED AMORPHOUS SILICON.
Stutzmann, M., Jackson, W.B., Street, R.A., Biegelsen, D.K.
1987
journal article
Disord Semicond
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023544197&partnerID=MN8TOARS
EID: 2-s2.0-0023544197
Electronic states in the gap of amorphous silicon-germanium alloys
Stutzmann, M., Tsai, C.C., Street, R.A.
1987
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-45949117763&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(87)90243-2
EID: 2-s2.0-45949117763
Electron spin resonance of shallow defect states in amorphous silicon and germanium
Stutzmann, M.
1987
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-23544477571&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(87)90024-X
EID: 2-s2.0-23544477571
Hydrogen passivation of boron acceptors in silicon: Raman studies
Stutzmann, M.
1987
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0005126715&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.35.5921
EID: 2-s2.0-0005126715
Occupancy of dangling bond defects in doped hydrogenated amorphous silicon
Stutzmann, M., Jackson, W.B.
1987
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023325281&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(87)90181-5
EID: 2-s2.0-0023325281
Raman scattering of hydrogen- and deuterium-implanted cadmium fluoride
Stutzmann, M., Tatarkiewicz, J.
1987
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-36549091284&partnerID=MN8TOARS
DOI: 10.1063/1.339210
EID: 2-s2.0-36549091284
ROLE OF DANGLING BONDS IN THE TRANSPORT AND RECOMBINATION OF a-Si: Ge:H ALLOYS.
Street, R.A., Tsai, C.C., Stutzmann, M., Kakalios, J.
1987
journal article
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023411489&partnerID=MN8TOARS
EID: 2-s2.0-0023411489
Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon
Stutzmann, M., Herrero, C.P.
1987
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0642341839&partnerID=MN8TOARS
DOI: 10.1063/1.98641
EID: 2-s2.0-0642341839
Thermally and optically induced metastabilities in doped hydrogenated amorphous silicon: ESR studies
Stutzmann, M.
1987
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0012498095&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.35.9735
EID: 2-s2.0-0012498095
WEAK BOND-DANGLING BOND CONVERSION IN AMORPHOUS SILICON.
Stutzmann, Martin
1987
journal article
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023383357&partnerID=MN8TOARS
EID: 2-s2.0-0023383357
Annealing of metastable defects in hydrogenated amorphous silicon
Stutzmann, M., Jackson, W.B., Tsai, C.C.
1986
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0003136598&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.34.63
EID: 2-s2.0-0003136598
DOPANT INCORPORATION AND DOPING EFFICIENCY IN a-Si:H AND a-Ge:H.
Stutzmann, Martin
1986
conference paper
Materials Research Society Symposia Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022985855&partnerID=MN8TOARS
EID: 2-s2.0-0022985855
DOPING EFFICIENCY IN AMORPHOUS SILICON AND GERMANIUM.
Stutzmann, M.
1986
journal article
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022523924&partnerID=MN8TOARS
EID: 2-s2.0-0022523924
DOPING OF AMORPHOUS SEMICONDUCTORS.
Stutzmann, Martin
1986
journal article
Key Eng Mater
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023588523&partnerID=MN8TOARS
EID: 2-s2.0-0023588523
Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
Jackson, W.B., Stutzmann, M.
1986
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0346015544&partnerID=MN8TOARS
DOI: 10.1063/1.97494
EID: 2-s2.0-0346015544
Electron-nuclear double-resonance experiments in hydrogenated amorphous silicon
Stutzmann, M., Biegelsen, D.K.
1986
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0346016653&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.34.3093
EID: 2-s2.0-0346016653
Electron-spin-resonance-transient spectroscopy
Jackson, W.B., Stutzmann, M., Tsai, C.C.
1986
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-35949019012&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.34.54
EID: 2-s2.0-35949019012
Hyperfine studies of dangling bonds in amorphous silicon
Biegelsen, D.K., Stutzmann, M.
1986
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000657785&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.33.3006
EID: 2-s2.0-0000657785
LIGHT-INDUCED METASTABLE DEFECTS IN AMORPHOUS SILICON: THE ROLE OF HYDROGEN.
Stutzmann, M., Jackson, W.B., Smith, A.J., Thompson, R.
1986
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0023042986&partnerID=MN8TOARS
EID: 2-s2.0-0023042986
Metastable changes of the electronic spin-lattice relaxation time in hydrogenated amorphous silicon
Stutzmann, M.
1986
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-11744305631&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.33.7379
EID: 2-s2.0-11744305631
29Si hyperfine measurements in a-Si:H
Biegelsen, D.K., Stutzmann, M.
1985
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022206502&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(85)90755-0
EID: 2-s2.0-0022206502
Donor states in hydrogenated amorphous silicon and germanium
Stutzmann, M., Street, R.A.
1985
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4244028061&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.54.1836
EID: 2-s2.0-4244028061
DOPANT AND DEFECT STATES IN a-Si:H.
Street, R.A., Biegelsen, D.K., Jackson, W.B., Johnson, N.M., Stutzmann, M.
1985
journal article
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022128463&partnerID=MN8TOARS
EID: 2-s2.0-0022128463
Dopant states and recombination in compensated a-Si:H
Stutzmann, M., Biegelsen, D.K., Street, R.A.
1985
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022181615&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(85)90741-0
EID: 2-s2.0-0022181615
ELECTRON SPIN RESONANCE OF AMORPHOUS GaAs, GaP, AND InP.
Hoheisel, B., Stuke, J., Stutzmann, M., Beyer, W.
1985
conference paper
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022241952&partnerID=MN8TOARS
EID: 2-s2.0-0022241952
Interface effects in amorphous silicon/nitride multilayers
Tsai, C.C., Thompson, M.J., Street, R.A., Stutzmann, M., Ponce, F.
1985
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022220487&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(85)90828-2
EID: 2-s2.0-0022220487
LIGHT-INDUCED METASTABLE DEFECTS IN a-Si:H: TOWARDS AN UNDERSTANDING.
Stutzmann, Martin, Jackson, Warren B., Tsai, Chuang Chuang
1985
conference paper
Materials Research Society Symposia Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022315483&partnerID=MN8TOARS
EID: 2-s2.0-0022315483
Light-induced metastable defects in hydrogenated amorphous silicon
Stutzmann, M., Jackson, W.B., Tsai, C.C.
1985
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022227085&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(85)90676-3
EID: 2-s2.0-0022227085
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
Stutzmann, M., Jackson, W.B., Tsai, C.C.
1985
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4243798052&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.32.23
EID: 2-s2.0-4243798052
Molecular hydrogen in amorphous Si: NMR studies
Boyce, J.B., Stutzmann, M., Ready, S.E.
1985
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022234283&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(85)90654-4
EID: 2-s2.0-0022234283
Native defects at the Si/SiO2 interface-amorphous silicon revisited
Biegelsen, D.K., Johnson, N.M., Stutzmann, M., Poindexter, E.H., Caplan, P.J.
1985
journal article
Applied Surface Science
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0021420292&partnerID=MN8TOARS
EID: 2-s2.0-0021420292
Orientational ordering and melting of molecular H2 in an a-Si matrix: NMR studies
Boyce, J.B., Stutzmann, M.
1985
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0347047632&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.54.562
EID: 2-s2.0-0347047632
Proton T1 for solid H2 in a-Si:H
Bork, V.P., Fedders, P.A., Norberg, R.E., Boyce, J.B., Stutzmann, M.
1985
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022240638&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(85)90757-4
EID: 2-s2.0-0022240638
Role of mechanical stress in the light-induced degradation of hydrogenated amorphous silicon
Stutzmann, M.
1985
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001991797&partnerID=MN8TOARS
DOI: 10.1063/1.96415
EID: 2-s2.0-0001991797
The absence of the Staebler-Wronski effect in fluorinated amorphous silicon
Janai, M., Stutzmann, M., Weil, R.
1985
journal article
Solar Cells
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0022069401&partnerID=MN8TOARS
DOI: 10.1016/0379-6787(85)90042-0
EID: 2-s2.0-0022069401
Two-level systems in hydrogenated amorphous silicon: NMR studies
Boyce, J.B., Stutzmann, M., Ready, S.E.
1985
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-4244186222&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.32.6062
EID: 2-s2.0-4244186222
Electron-spin-resonance study of boron-doped amorphous SixGe1-x: H alloys
Stutzmann, M., Nemanich, R.J., Stuke, J.
1984
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-3643111434&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.30.3595
EID: 2-s2.0-3643111434
KINETICS OF FORMATION AND ANNEALING OF LIGHT INDUCED DEFECTS IN HYDROGENATED AMORPHOUS SILICON.
Stutzmann, M., Jackson, W.B., Tsai, C.C.
1984
conference paper
AIP Conference Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0021579888&partnerID=MN8TOARS
EID: 2-s2.0-0021579888
Kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon
Stutzmann, M., Jackson, W.B., Tsai, C.C.
1984
journal article
Applied Physics Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000039928&partnerID=MN8TOARS
DOI: 10.1063/1.95020
EID: 2-s2.0-0000039928
New paramagnetic states in amorphous silicon and germanium
Stutzmann, M., Stuke, J.
1984
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0021466838&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(84)90313-2
EID: 2-s2.0-0021466838
Solid hydrogen in hydrogenated amorphous silicon
Graebner, J.E., Golding, B., Allen, L.C., Biegelsen, D.K., Stutzmann, M.
1984
journal article
Physical Review Letters
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-5844341064&partnerID=MN8TOARS
DOI: 10.1103/PhysRevLett.52.553
EID: 2-s2.0-5844341064
STAEBLER-WRONSKI EFFECT IN UNDOPED a-Si:H: - ITS INTRINSIC NATURE AND THE INFLUENCE OF IMPURITIES.
Tsai, C.C., Stutzmann, M., Jackson, W.B.
1984
conference paper
AIP Conference Proceedings
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0021614267&partnerID=MN8TOARS
EID: 2-s2.0-0021614267
Electron-spin-lattice relaxation in amorphous silicon and germanium
Stutzmann, M., Biegelsen, D.K.
1983
journal article
Physical Review B
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000720398&partnerID=MN8TOARS
DOI: 10.1103/PhysRevB.28.6256
EID: 2-s2.0-0000720398
ELECTRON SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS GERMANIUM.
Stutzmann, M., Stuke, J., Dersch, H.
1983
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020588708&partnerID=MN8TOARS
EID: 2-s2.0-0020588708
Paramagnetic states in doped amorphous silicon and germanium
Stutzmann, M., Stuke, J.
1983
journal article
Solid State Communications
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020797693&partnerID=MN8TOARS
DOI: 10.1016/0038-1098(83)90767-6
EID: 2-s2.0-0020797693
Spin-lattice relaxation of paramagnetic states in a-Si:H and a-Ge:H
Biegelsen, D.K., Stutzmann, M.
1983
journal article
Journal of Non-Crystalline Solids
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020935076&partnerID=MN8TOARS
DOI: 10.1016/0022-3093(83)90541-0
EID: 2-s2.0-0020935076
TEMPERATURE DEPENDENCE OF ESR SPECTRA OF DOPED AMORPHOUS GERMANIUM.
Stutzmann, M., Stuke, J.
1983
journal article
Physica Status Solidi (B) Basic Research
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020848898&partnerID=MN8TOARS
EID: 2-s2.0-0020848898
Electronic properties of doped glow-discharge amorphous germanium
Hauschildt, D., Stutzmann, M., Stuke, J., Dersch, H.
1982
journal article
Solar Energy Materials
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020206826&partnerID=MN8TOARS
DOI: 10.1016/0165-1633(82)90075-2
EID: 2-s2.0-0020206826

See ORCID profile of Martin Stutzmann as well.

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