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M.Sc. Theresa Hoffmann

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Experimentelle Halbleiterphysik

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Novel Nanowire Devices for Optoelectronic Control of Color Centers in Diamond and Silicon Carbide
Group III-nitride nanowires (NWs), namely GaN and its ternary alloys InxGa1-xN and AlxGa1-xN, have attracted increasing interest in device fabrication. Due to their high refractive index compared to air, the NWs are suitable as optical waveguides, especially for materials with a comparable refractive index, e.g. diamond or silicon carbide (SiC). These materials have color centers, especially the nitrogen vacancies in diamond and the silicon vacancies in SiC, which are both promising candidates as qubits for quantum technologies. The NWs should work as waveguides for the optical read-out of the color centers and as nano-contacts for the electrical control of the charge states of the color centers. The aim of this work is the fabrication and characterization of NW-based GaN-diamond/SiC devices for the optoelectronic control of color centers.
geeignet als
  • Masterarbeit Physik der kondensierten Materie
  • Masterarbeit Applied and Engineering Physics
Themensteller(in): Martin Stutzmann
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