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Semiconductor Quantum Electronics

Course 0000000689 in SS 2020

General Data

Course Type lecture
Semester Weekly Hours 2 SWS
Organisational Unit Experimental Semiconductor Physics
Lecturers Martin Brandt
Dates Thu, 14:00–16:00, ZNN 0.001

Assignment to Modules

  • PH2290: Halbleiter-Quantenelektronik / Semiconductor Quantum Electronics
    This module is included in the following catalogs:
    • Specific catalogue of special courses for condensed matter physics
    • Specific catalogue of special courses for Applied and Engineering Physics
    • Focus Area Experimental Quantum Science & Technology in M.Sc. Quantum Science & Technology
    • Complementary catalogue of special courses for nuclear, particle, and astrophysics
    • Complementary catalogue of special courses for Biophysics

Further Information

Courses are together with exams the building blocks for modules. Please keep in mind that information on the contents, learning outcomes and, especially examination conditions are given on the module level only – see section "Assignment to Modules" above.

additional remarks For more than 50 years semiconductor devices for information technologies and photonics have evolved from laboratory curiosities to mainstream devices with relevance for all aspects of our modern life. The aim of this course is to provide MSc. students in the Applied Engineering and Condensed Matter Physics study programs with an in-depth understanding of the fundamental physics underlying the operation of key semiconductor electronic and photonic devices. The course will provide students with insights into new approaches, materials and current research themes and is divided into two parts that, respectively, focus specifically on electronic and photonic micro- and nano-devices: Part 1 – will start by reviewing the physics of semiconductor junctions and metal-semiconductor contacts before continuing to explore bipolar junction and heterostructure bipolar transistors (BJTs, HBTs). We will also discuss secondary effects that impact on static and high frequency transistor performance. After this, we will explore field effect devices such as the junction FET, metal-semiconductor and -oxide devices (MISFET / MOSFET) and the use of complementary metal oxide semiconductor (CMOS) technologies for CCDs and DRAM. We will also discuss current challenges faced by CMOS technologies and discuss new concepts that move beyond CMOS including carbon nanostructures, molecular electronics and quantum dot based electronic nano-devices. Part 2 – focus will shift to linear and non-linear photonic devices including light emitting diodes, semiconductor optical amplifiers (SOA), non-linear photonic devices and lasers. Here, we will explore different ways to tailor the electronic and photonic components of the laser structure to obtain single mode operation and discuss recent trends to downscale both the laser cavity and the gain-medium to realise new classes of nano-lasers with enhanced performance and high modulation bandwidths. We will then continue to explore devices based on linear and non-linear optical phenomena including electro-, magneto- and acousto-optic effects. Finally, the course will conclude with a discussion of semiconductor and superconductor based solar-cells and photodetectors that can detect single photons with near unity quantum efficiency.
Links Course documents
E-Learning course (e. g. Moodle)
TUMonline entry
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