de | en

Prof. Dr. Martin Stutzmann

Photo von Prof. Dr. Martin Stutzmann.
Telefon
+49 89 289-12760
Raum
WSI: 207S
E-Mail
stutzmann@tum.de
Links
Homepage
Visitenkarte in TUMonline
Arbeitsgruppe
Experimentelle Halbleiterphysik
Funktionen
  • Professur für Experimentelle Halbleiterphysik
  • Mitglied des Fakultätsrats: Vertreter der Hochschullehrer(innen)

Lehrveranstaltungen und Termine

Titel und Modulzuordnung
ArtSWSDozent(en)Termine
Physics of Semiconductors
Zuordnung zu Modulen:
VO 4 Stutzmann, M. Di, 12:00–14:00, PH HS3
Mo, 10:00–12:00, PH HS3
sowie einzelne oder verschobene Termine
Current Problems in Semiconductor Physics
Zuordnung zu Modulen:
HS 2 Stutzmann, M.
Exercise to Physics of Semiconductors
Zuordnung zu Modulen:
UE 2 Eckmann, F. Kraut, M. Weiszer, S. Zeidler, A.
Leitung/Koordination: Stutzmann, M.
Termine in Gruppen
FOPRA-Versuch 06: Mikrowellen- und Detektionstechnik der Elektronenspinresonanz
Zuordnung zu Modulen:
PR 1 Stutzmann, M.
Mitwirkende: Brandt, M.
FOPRA-Versuch 08: Hochauflösende Röntgenbeugung
Zuordnung zu Modulen:
PR 1 Stutzmann, M.
Mitwirkende: Winnerl, J.
FOPRA-Versuch 50: Photovoltaik
Zuordnung zu Modulen:
PR 1 Stutzmann, M.
Mitwirkende: Kraut, M.
Literatur-Seminar zu Festkörperphysik
Zuordnung zu Modulen:
SE 2 Stutzmann, M.
Vorbesprechung zum Fortgeschrittenen-Praktikum (F-Praktikum)
Zuordnung zu Modulen:
PR 0.1 Schönert, S. Stutzmann, M.
Mitwirkende: Hauptner, A.
einzelne oder verschobene Termine

Ausgeschriebene Angebote für Abschlussarbeiten

Optoelectronic Characterization of Hybrid Systems of Organic and Inorganic Semiconductors
Hybrid systems of organic and inorganic semiconductors are attractive for novel types of solar cells and light emitting devices, as they combine the high carrier mobility and stability of inorganic materials with the low production costs and the flexibility of organic semiconductors. In order to identify the most promising material combinations, the properties of the hybrid systems need to be understood in detail. In this work, the organic semiconducting molecule F16CuPc (Fig. 1) will be deposited on inorganic semiconductors like Si, SiC, or GaN by organic molecular beam deposition. After optimizing the organic thin film growth, the resulting hybrid systems (Fig. 2) will be characterized with respect to their structural and optoelectronic properties. The aim of this project is to gain information about the influence of the choice of organic and inorganic semiconductor materials on the organic/inorganic interface of the heterojunction. For further information, please contact Hannah Schamoni (Hannah.Schamoni(at)wsi.tum.de). To apply, please submit your CV and your transcript of records.
geeignet als
  • Masterarbeit Physik der kondensierten Materie
  • Masterarbeit Applied and Engineering Physics
Themensteller(in): Martin Stutzmann

Veröffentlichungen

Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2¯01)
Sebastian L. Kollmannsberger (author), Constantin A. Walenta (author), Andrea Winnerl (author), Fabian Knoller (author), Rui N. Pereira (author), Martin Tschurl (author), Martin Stutzmann (author), Ueli Heiz (author)
2017-9-28
journal article
The Journal of Chemical Physics
URL: https://doi.org/10.1063/1.4994141
DOI: 10.1063/1.4994141
Electrochemical characterization of GaN surface states
Andrea Winnerl (author), Jose A. Garrido (author), Martin Stutzmann (author)
2017-7-28
journal article
Journal of Applied Physics
DOI: 10.1063/1.4995429
Photo-induced changes of the surface band bending in GaN: Influence of growth technique, doping and polarity
Andrea Winnerl (author), Rui N. Pereira (author), Martin Stutzmann (author)
2017-5-28
journal article
Journal of Applied Physics
DOI: 10.1063/1.4983846
Measurement of the in-plane thermal conductivity by steady-state infrared thermography
Anton Greppmair (author), Benedikt Stoib (author), Nitin Saxena (author), Caroline Gerstberger (author), Peter Müller-Buschbaum (author), Martin Stutzmann (author), Martin S. Brandt (author)
2017-4
journal article
Review of Scientific Instruments
DOI: 10.1063/1.4979564
GaN surface states investigated by electrochemical studies
Andrea Winnerl (author), Jose A. Garrido (author), Martin Stutzmann (author)
2017-3-6
journal article
Applied Physics Letters
DOI: 10.1063/1.4977947
Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
James (Zi-Jian) Ju (author), Bo Sun (author), Georg Haunschild (author), Bernhard Loitsch (author), Benedikt Stoib (author), Martin S. Brandt (author), Martin Stutzmann (author), Yee Kan Koh (author), Gregor Koblmüller (author)
2016-4
journal article
AIP Advances
DOI: 10.1063/1.4948446
α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
Hannah Schamoni (author), Simon Noever (author), Bert Nickel (author), Martin Stutzmann (author), Jose A. Garrido (author)
2016-2-15
journal article
Applied Physics Letters
DOI: 10.1063/1.4942407
Broadband electrically detected magnetic resonance using adiabatic pulses
Hrubesch, F.M., Braunbeck, G., Voss, A., Stutzmann, M., Brandt, M.S.
2015
journal article
Journal of Magnetic Resonance
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84925743813&partnerID=MN8TOARS
DOI: 10.1016/j.jmr.2015.02.010
EID: 2-s2.0-84925743813
Doped GaN nanowires on diamond: Structural properties and charge carrier distribution
Schuster, F., Winnerl, A., Weiszer, S., Hetzl, M., Garrido, J.A., Stutzmann, M.
2015
journal article
Journal of Applied Physics
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84923675344&partnerID=MN8TOARS
DOI: 10.1063/1.4906747
EID: 2-s2.0-84923675344
Electronic changes induced by surface modification of Cu<inf>2-x</inf>S nanocrystals
Aigner, W., Nenova, G.K., Sliem, M.A., Fischer, R.A., Stutzmann, M., Pereira, R.N.
2015
journal article
Journal of Physical Chemistry C
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84937155972&partnerID=MN8TOARS
DOI: 10.1021/acs.jpcc.5b01078
EID: 2-s2.0-84937155972

weitere Veröffentlichungen (insgesamt 655).

Siehe auch ORCID-Profil von Martin Stutzmann.

Nach oben