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Topologische Elektronik und Materialien
Topological Electronics and Materials

Modul PH2283

Diese Modulbeschreibung enthält neben den eigentlichen Beschreibungen der Inhalte, Lernergebnisse, Lehr- und Lernmethoden und Prüfungsformen auch Verweise auf die aktuellen Lehrveranstaltungen und Termine für die Modulprüfung in den jeweiligen Abschnitten.

Basisdaten

PH2283 ist ein Semestermodul in Englisch oder Deutsch auf Master-Niveau das im Sommersemester angeboten wird.

Die Gültigkeit des Moduls ist von SS 2019 .

Soweit nicht beim Export in einen fachfremden Studiengang ein anderer studentischer Arbeitsaufwand ("Workload") festgelegt wurde, ist der Umfang der folgenden Tabelle zu entnehmen.

GesamtaufwandPräsenzveranstaltungenUmfang (ECTS)
150 h 30 h 5 CP

Inhaltlich verantwortlich für das Modul PH2283 ist Alexander Holleitner.

Inhalte, Lernergebnisse und Voraussetzungen

Inhalt

This module provides a detailed overview on a fascinating new class of solid-state materials and a fast growing research area: topological electronics and corresponding quantum materials. The conceptual application of topology to the classification of solid-state materials revolutionized condensed matter physics in recent years and lead to the discovery of novel topological quantum materials and phases. Topologically non-trivial band structures give rise to material properties that are insensitive against external perturbations, which renders topological and quantum  materials a promising and robust platform for novel electronic, spin-electronic and quantum optical applications. This module will introduce the basic concepts of topology in solid-state physics and discuss corresponding electronic and spin-electronic phenomena in quantum materials. A particular focus will be placed on the experimental realization and characterization of atomistic quantum materials with only a few nanometer thickness. The following specific topics will be addressed:

  • Historical and topical introduction to topological quantum phenomena and materials.
  • Review of solid state-band theory and introduction to modern topological band theory tools, including Berry phase, Berry curvature and Chern numbers.
  • Overview, classification, and characteristic properties of the main families of topological materials, including 3D and 2D topological insulators and Weyl semimetals.
  • Introduction to topological electronic phenomena, such as the quantum Hall effect, the (quantum) anomalous Hall effect, and the (quantum) spin Hall effect. 
  • Nanofabrication and preparation methods applicable to topological materials, such as Bi2Se3 or few-layer and monolayer WTe2.
  • Nanoanalytical methods specialized to topological materials. This will include polarization-resolved optoelectronic studies, magneto-electronic transport experiments, atomic force, scanning tunneling, scanning electron microscopy, enhanced X-ray methods resolving the non-trivial band structure.
  • Discussion of potential device application for selected topological materials in the area of electronic and spintronic circuits.
  • Focus topics to introduce peculiar properties of selected materials in more detail:
  1. Crystal structures and space groups in topological materials.
  2. Broken time- and space-symmetries and corresponding Hamiltonians.
  3. Berry curvature induced anomalous velocity and its influence on the transversal electron conductivity and corresponding spin polarization.

Furthermore, the students will become familiar with selected recent research papers and review articles in high-impact research journals such as Science, Nature publishing group and further literature related to topological quantum materials. The students are being trained in how to access and extract the information from those articles.

Lernergebnisse

After a successful participation of the module, the student is able to:

  1. understand different classes of topological materials and to apply the classification scheme to further solid state materials.
  2. evaluate the non-trivial band-structure of selected topological materials.
  3. understand the preparation and nanofabrication methods for topological materials and to evaluate suitable methodologies for novel quantum materials.
  4. understand optical and structural characterization methods for topological materials, to analyze related results in recent literature and to apply suitable methodologies for given problems related to topological materials.
  5. remember magnetotransport phenomena, such as the quantum spin Hall effect in topological materials.
  6. evaluate polarization resolved optoelectronic transport phenomena.
  7. understand and discuss applications of topological materials for electronic, optoelectronic, and spintronics devices.
  8. access and evaluate the content of topical research articles focusing on selected topics related to quantum material research in high-impact journals.

Voraussetzungen

Keine Vorkenntnisse nötig, die über die Zulassungsvoraussetzungen zum Masterstudium hinausgehen.

Lehrveranstaltungen, Lern- und Lehrmethoden und Literaturhinweise

Lehrveranstaltungen und Termine

ArtSWSTitelDozent(en)Termine
VO 2 Topologische Elektronik und Materialien Holleitner, A.
Mitwirkende: Kastl, C.

Lern- und Lehrmethoden

In the thematically structured lecture, the learning content is presented. The different parts of the lectures are cross-linked and thereby, the main physical concepts explained. The link to current research activities will be provided by discussing related and topical research article in high-impact journals. The students are actively involved by direct question and answer periods to better develop their individual understanding and to learn the use of up-to date’s research literature.

Medienformen

Power-point presentation together with handwritten lecture notes based on tablet-PC / beamer presentation (“e-chalk”). For selected topics interactive, numerical simulation tools (based on Python as a state-of-the-art scientific programming language) will be used to further illustrate and visualize mathematical concepts. Additional literature / research articles in pdf-format.

All Materials will be available for download until the completion of the repeat exam.

Literatur

No specific course literature is required. Lecture script, references therein and references to further research and review articles are provided and some general recommendations for books for specific topics will be made in the lecture.

Modulprüfung

Beschreibung der Prüfungs- und Studienleistungen

Es findet eine mündliche Prüfung von etwa 25 Minuten Dauer statt. Darin wird das Erreichen der im Abschnitt Lernergebnisse dargestellten Kompetenzen mindestens in der dort angegebenen Erkenntnisstufe exemplarisch durch Verständnisfragen und Beispielrechnungen überprüft.

Prüfungsaufgabe könnte beispielsweise sein:

  • Define fabrication methods of topological materials.
  • Explain characterization methods of topological materials.
  • Explain the (polarized) optoelectronic properties of few-layer topological materials.
  • Analyze the electronic fingerprint of (quantum) spin Hall effect in monolayer topological materials.
  • Discuss the impact of the layer number on the optical, electronic and spintronic of layered topological materials.

Wiederholbarkeit

Eine Wiederholungsmöglichkeit wird am Semesterende angeboten.

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