Semiconductor Physics
Module PH2155
Module version of WS 2012/3
There are historic module descriptions of this module. A module description is valid until replaced by a newer one.
Whether the module’s courses are offered during a specific semester is listed in the section Courses, Learning and Teaching Methods and Literature below.
available module versions | ||||||||
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WS 2022/3 | WS 2021/2 | WS 2020/1 | WS 2019/20 | WS 2018/9 | WS 2017/8 | WS 2016/7 | WS 2015/6 | WS 2012/3 |
Basic Information
PH2155 is a semester module in German or English language at Master’s level which is offered in winter semester.
This module description is valid from SS 2012 to SS 2019.
If not stated otherwise for export to a non-physics program the student workload is given in the following table.
Total workload | Contact hours | Credits (ECTS) |
---|---|---|
300 h | 110 h | 10 CP |
Responsible coordinator of the module PH2155 in the version of WS 2012/3 was Jonathan Finley.
Content, Learning Outcome and Preconditions
Content
This module provides an introduction to the electronic and optical properties of modern semiconductor materials and their associated nanostructures. After a contextual and historical motivation, it begins with an introduction to the different methods of fabrication used for ultrapure semiconductor materials, alloys and mixed crystal "multi-layer" systems. It describes how quantum mechanical effects can be exploited for novel device applications in electronics and opto-electronics. After this material properties of the most commonly used semiconductors, lattice vibrations and electronic bandstructure are discussed. Carrier statistics in intrinsic (undoped) semiconductors are then explored before discussing how doping can be used to controllably modify the electronic properties. Thereafter the semi-classical and quantum electronic properties of semiconductors are studied and it is describe how these charge transport properties can be controlled by tailored quantum phenomena.
Learning Outcome
After participation in the Module the student is able to:
- Describe the crystal structure and recall the principle fabrication methods for the most prominent semiconductor materials
- Explain and calculate the electronic bandstructure of these materials and its dependence on material composition.
- Understand the terms "two-dimensional", "one-dimensional" and "zero-dimensional" semiconductor nanostructure and explain the influence of quantum confinement on the electronic properties of semiconductors.
- Understand and explain the physics governing electrical conductivity in bulk semiconductors and low dimensional nanostructures.
- Understand and explain magneto transport phenomena including the integer quantum Hall effect and
- Understand and explain the interaction of electromagnetic radiation with semiconductors.
Preconditions
No prerequisites that are not already included in the prerequisites for the Master’s programmes.
Courses, Learning and Teaching Methods and Literature
Learning and Teaching Methods
Lectures, Beamer presentations, discussions
Media
Literature
Standard textbooks of semiconductor physics, e.g.:
- J. H. Davies: The Physics of Low-Dimensional Semiconductors (Cambridge University Press, 1998),
- M. Grundmann: Semiconductor Physics, (Cambridge University Press, 2006),
- C. Weisbuch and B. Vinter: Quantum Semiconductor Structures, (Academic Press-1991),
- T. Heinzel: Mesoscopic Electronics in Solid State Nanostructures, (Wiley VCH, 2003),
- Bushan, Bharat (Editor): Springer Handbook of Nanotechnology, (2nd revised and extended edition)
Module Exam
Description of exams and course work
In a written exam the learning outcome is tested using comprehension questions and sample problems.
In accordance with §12 (8) APSO the exam can be done as an oral exam. In this case the time duration is 40 minutes.
A bonus mark of +0.3 will be awarded to students who complete and actively participate in the exercise classes (>75% attendance).
Exam Repetition
The exam may be repeated at the end of the semester.