Nanoanalytics (Characterization of Semiconductor Nanostructures)

This module gives an introductory in nanoanalytics. The general scheme of scanning probe microscopy will be introduced. In particular, the physics of electron microscopy methods, such as scanning electron electron microscopy, transmission electron microscopy, high-resolution electron microscopy, and scanning tunneling electron microscopy, are discussed. Furthermore, focused ion microscopy and lithography techniques are explained. A further emphasis is put on methods for surface analysis. These comprise Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry. In addition, x-ray reflectrometry and diffraction will be introduction.

After a successful participation of the module, the student is able to:
1) differentiate and name the physics of scanning probe microscopy methods.
3) explain focused ion micrometry and lithograpy.
4) discuss and explain techniques for the surface analysis.
5) explain and specify the x-ray reflectrometry and diffraction.

There are no access requirements beyond the ones for the master study.

Lecture, beamer presentation, board work, exercises in individual and group work, discussion

Lecture script, practise sheets, accompanying internet site, complementary literature

Czichos, Horst; Saito, Tetsuya; Smith, Leslie (Editors): “Springer Handbook of Materials Measurement Methods”, (2006).

In an oral exam the learning outcome is tested using comprehension questions and sample problems.

In accordance with §12 (8) APSO the exam can be done as a written test. In this case the time duration is 60 minutes.