Advanced Electronic Devices

Module EI7414

This Module is offered by TUM Department of Electrical and Computer Engineering.

This module handbook serves to describe contents, learning outcome, methods and examination type as well as linking to current dates for courses and module examination in the respective sections.

Module version of SS 2014

There are historic module descriptions of this module. A module description is valid until replaced by a newer one.

available module versions
SS 2016SS 2014

Basic Information

EI7414 is a semester module in German or English language at Master’s level which is offered in summer semester.

This Module is included in the following catalogues within the study programs in physics.

  • Catalogue of non-physics elective courses
Total workloadContact hoursCredits (ECTS)
150 h 45 h 5 CP

Content, Learning Outcome and Preconditions

Content

DIODES: ideal p-n-junction, metal-semiconductor contact, heterojunction, non-ideal effects (recombination and generation in the space charge region, high injection, finite-length leads), negative differential resistance devices (tunnel diode, resonant tunnel diode, Gunn diode), TRANSISTORS: classical MOSFET, scaling and short channel effects, High-Electron-Mobility-Transistor (HEMT), advanced MOSFETs (SOI, multiple gate, strained Si, metal gate, high-k dielectrics), low-dimensional transistors (nanowires, CNT, SET), organic field effect transistors (OFET, SAMFET)

Learning Outcome

Basic understanding of important, non-ideal effects in diodes and field effect transistors; advance knowledge of architecture, function and application of specific, modern electronic devices; Ability to evaluate novel and future device developments in particular regarding their application potential.

Preconditions

Basic knowledge about electronic devices

Courses, Learning and Teaching Methods and Literature

Courses and Schedule

ArtSWSTitelDozent(en)Termine
VU 3 Moderne Elektronische Bauelemente Tornow, M.
Mitwirkende: Pfaehler, S.
Dienstag, 09:45–12:15
sowie einzelne oder verschobene Termine

Learning and Teaching Methods

In addition to classical lecture presentation and individual study methods of the students exercises and additional tutorials will be provided, targeting at a deeper level of understanding. The students will get in early contact with current research topics by preparing an own seminar talk based on original literature.

Media

The following media will be used: lectures, handouts, blackboard, tablet PC, lab visits

Literature

S. M. Sze, K.K. Ng, Physics of Semiconductor Devices , 3rd Ed. (2007), Wiley D.L. Pulfrey, ""Understanding Modern Transistors and Diodes"", (2010), Cambridge

Module Exam

Description of exams and course work

written (60 min.) + oral (15 min.); The written exam is composed of calculation exercises and short questions about the entire lecture contents, it serves as an examination of the basic understanding of important, non-ideal effects in diodes and field effect transistors as well as of an advance knowledge of architecture, function and application of specific, modern electronic devices. The oral presentation shall be chosen from a list of possible, current topics, prepared and presented based on text books and original literature. It serves as the confirmation of the ability to evaluate novel and future device developments in particular regarding their application potential. Weighted grade: written: 2/3; oral 1/3

Exam Repetition

There is a possibility to take the exam in the following semester.

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