Advanced Electronic Devices
Module EI7414
This module handbook serves to describe contents, learning outcome, methods and examination type as well as linking to current dates for courses and module examination in the respective sections.
Module version of SS 2018 (current)
There are historic module descriptions of this module. A module description is valid until replaced by a newer one.
Whether the module’s courses are offered during a specific semester is listed in the section Courses, Learning and Teaching Methods and Literature below.
| available module versions | ||
|---|---|---|
| SS 2018 | SS 2016 | SS 2014 |
Basic Information
EI7414 is a semester module in German or English language at Master’s level which is offered in summer semester.
This module description is valid from SS 2014 to WS 2019/20.
| Total workload | Contact hours | Credits (ECTS) |
|---|---|---|
| 150 h | 45 h | 5 CP |
Content, Learning Outcome and Preconditions
Content
DIODES: ideal p-n-junction, metal-semiconductor contact, heterojunction, non-ideal effects (recombination and generation in the space charge region, high injection, finite-length leads), negative differential resistance devices (tunnel diode, resonant tunnel diode, Gunn diode), TRANSISTORS: classical MOSFET, scaling and short channel effects, High-Electron-Mobility-Transistor (HEMT), advanced MOSFETs (SOI, multiple gate, strained Si, metal gate, high-k dielectrics), low-dimensional transistors (nanowires, CNT, SET), organic field effect transistors (OFET, SAMFET)
Learning Outcome
Basic understanding of important, non-ideal effects in diodes and field effect transistors; advance knowledge of architecture, function and application of specific, modern electronic devices; Ability to evaluate novel and future device developments in particular regarding their application potential.
Preconditions
Basic knowledge about electronic devices
Courses, Learning and Teaching Methods and Literature
Learning and Teaching Methods
In addition to classical lecture presentation and individual study methods of the students exercises and additional tutorials will be provided, targeting at a deeper level of understanding. The students will get in early contact with current research topics.
Media
The following media will be used: lectures, handouts, blackboard, tablet PC, lab visits
Literature
S. M. Sze, K.K. Ng, Physics of Semiconductor Devices , 3rd Ed. (2007), Wiley
D.L. Pulfrey, ""Understanding Modern Transistors and Diodes"", (2010), Cambridge
D.L. Pulfrey, ""Understanding Modern Transistors and Diodes"", (2010), Cambridge
Module Exam
Description of exams and course work
written (60 min.);
The written exam is composed of calculation exercises and short questions about the entire lecture contents, it serves as an examination of the basic understanding of important, non-ideal effects in diodes and field effect transistors as well as of an advance knowledge of architecture, function and application of specific, modern electronic devices. Up to 20% of the exam may comprise ticking boxes of multiple choice answers.
The written exam is composed of calculation exercises and short questions about the entire lecture contents, it serves as an examination of the basic understanding of important, non-ideal effects in diodes and field effect transistors as well as of an advance knowledge of architecture, function and application of specific, modern electronic devices. Up to 20% of the exam may comprise ticking boxes of multiple choice answers.
Exam Repetition
There is a possibility to take the exam in the following semester.